SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
To provide a technique capable of reducing the amount of atmosphere adjustment gas used when a substrate is processed.SOLUTION: A substrate processing apparatus according to one aspect of the present disclosure includes a substrate holding unit, a top plate unit, a gas supply unit, a processing liqu...
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creator | IKEDA YOSHIKANE NISHI KENJI UMEZAKI SHOTA |
description | To provide a technique capable of reducing the amount of atmosphere adjustment gas used when a substrate is processed.SOLUTION: A substrate processing apparatus according to one aspect of the present disclosure includes a substrate holding unit, a top plate unit, a gas supply unit, a processing liquid nozzle, and an arm. The substrate holding unit holds a substrate. The top plate unit is provided to face the substrate held by the substrate holding unit, and is formed with a through hole at a position facing at least the center of the substrate. The gas supply unit supplies an atmosphere adjustment gas for adjusting the atmosphere to a space between the substrate holding unit and the top plate unit. The processing liquid nozzle discharges a processing liquid for processing the substrate onto the substrate. The arm holds the processing liquid nozzle and moves the nozzle between a processing position where the processing liquid is discharged from the processing liquid nozzle through the through hole and a standby position outside the substrate.SELECTED DRAWING: Figure 3
【課題】基板を処理する際における雰囲気調整ガスの使用量を削減することができる技術を提供する。【解決手段】本開示の一態様による基板処理装置は、基板保持部と、天板部と、ガス供給部と、処理液ノズルと、アームとを備える。基板保持部は、基板を保持する。天板部は、基板保持部に保持された基板に向かい合って設けられ、少なくとも基板の中心に対向する位置に貫通孔が形成される。ガス供給部は、基板保持部と天板部との間の空間に雰囲気を調整する雰囲気調整ガスを供給する。処理液ノズルは、基板を処理する処理液を基板に吐出する。アームは、処理液ノズルを保持し、処理液ノズルから貫通孔を介して処理液を吐出する処理位置と基板より外方の待機位置との間で移動させる。【選択図】図3 |
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【課題】基板を処理する際における雰囲気調整ガスの使用量を削減することができる技術を提供する。【解決手段】本開示の一態様による基板処理装置は、基板保持部と、天板部と、ガス供給部と、処理液ノズルと、アームとを備える。基板保持部は、基板を保持する。天板部は、基板保持部に保持された基板に向かい合って設けられ、少なくとも基板の中心に対向する位置に貫通孔が形成される。ガス供給部は、基板保持部と天板部との間の空間に雰囲気を調整する雰囲気調整ガスを供給する。処理液ノズルは、基板を処理する処理液を基板に吐出する。アームは、処理液ノズルを保持し、処理液ノズルから貫通孔を介して処理液を吐出する処理位置と基板より外方の待機位置との間で移動させる。【選択図】図3</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191121&DB=EPODOC&CC=JP&NR=2019201075A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191121&DB=EPODOC&CC=JP&NR=2019201075A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IKEDA YOSHIKANE</creatorcontrib><creatorcontrib>NISHI KENJI</creatorcontrib><creatorcontrib>UMEZAKI SHOTA</creatorcontrib><title>SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD</title><description>To provide a technique capable of reducing the amount of atmosphere adjustment gas used when a substrate is processed.SOLUTION: A substrate processing apparatus according to one aspect of the present disclosure includes a substrate holding unit, a top plate unit, a gas supply unit, a processing liquid nozzle, and an arm. The substrate holding unit holds a substrate. The top plate unit is provided to face the substrate held by the substrate holding unit, and is formed with a through hole at a position facing at least the center of the substrate. The gas supply unit supplies an atmosphere adjustment gas for adjusting the atmosphere to a space between the substrate holding unit and the top plate unit. The processing liquid nozzle discharges a processing liquid for processing the substrate onto the substrate. The arm holds the processing liquid nozzle and moves the nozzle between a processing position where the processing liquid is discharged from the processing liquid nozzle through the through hole and a standby position outside the substrate.SELECTED DRAWING: Figure 3
【課題】基板を処理する際における雰囲気調整ガスの使用量を削減することができる技術を提供する。【解決手段】本開示の一態様による基板処理装置は、基板保持部と、天板部と、ガス供給部と、処理液ノズルと、アームとを備える。基板保持部は、基板を保持する。天板部は、基板保持部に保持された基板に向かい合って設けられ、少なくとも基板の中心に対向する位置に貫通孔が形成される。ガス供給部は、基板保持部と天板部との間の空間に雰囲気を調整する雰囲気調整ガスを供給する。処理液ノズルは、基板を処理する処理液を基板に吐出する。アームは、処理液ノズルを保持し、処理液ノズルから貫通孔を介して処理液を吐出する処理位置と基板より外方の待機位置との間で移動させる。【選択図】図3</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLALDnUKDglyDHFVCAjyd3YNDvb0c1dwDAhwBIqFBis4-rkoYFXi6xri4e_Cw8CalphTnMoLpbkZlNxcQ5w9dFML8uNTiwsSk1PzUkvivQKMDAwtgdjA3NTRmChFAO2_Kwg</recordid><startdate>20191121</startdate><enddate>20191121</enddate><creator>IKEDA YOSHIKANE</creator><creator>NISHI KENJI</creator><creator>UMEZAKI SHOTA</creator><scope>EVB</scope></search><sort><creationdate>20191121</creationdate><title>SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD</title><author>IKEDA YOSHIKANE ; NISHI KENJI ; UMEZAKI SHOTA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2019201075A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>IKEDA YOSHIKANE</creatorcontrib><creatorcontrib>NISHI KENJI</creatorcontrib><creatorcontrib>UMEZAKI SHOTA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IKEDA YOSHIKANE</au><au>NISHI KENJI</au><au>UMEZAKI SHOTA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD</title><date>2019-11-21</date><risdate>2019</risdate><abstract>To provide a technique capable of reducing the amount of atmosphere adjustment gas used when a substrate is processed.SOLUTION: A substrate processing apparatus according to one aspect of the present disclosure includes a substrate holding unit, a top plate unit, a gas supply unit, a processing liquid nozzle, and an arm. The substrate holding unit holds a substrate. The top plate unit is provided to face the substrate held by the substrate holding unit, and is formed with a through hole at a position facing at least the center of the substrate. The gas supply unit supplies an atmosphere adjustment gas for adjusting the atmosphere to a space between the substrate holding unit and the top plate unit. The processing liquid nozzle discharges a processing liquid for processing the substrate onto the substrate. The arm holds the processing liquid nozzle and moves the nozzle between a processing position where the processing liquid is discharged from the processing liquid nozzle through the through hole and a standby position outside the substrate.SELECTED DRAWING: Figure 3
【課題】基板を処理する際における雰囲気調整ガスの使用量を削減することができる技術を提供する。【解決手段】本開示の一態様による基板処理装置は、基板保持部と、天板部と、ガス供給部と、処理液ノズルと、アームとを備える。基板保持部は、基板を保持する。天板部は、基板保持部に保持された基板に向かい合って設けられ、少なくとも基板の中心に対向する位置に貫通孔が形成される。ガス供給部は、基板保持部と天板部との間の空間に雰囲気を調整する雰囲気調整ガスを供給する。処理液ノズルは、基板を処理する処理液を基板に吐出する。アームは、処理液ノズルを保持し、処理液ノズルから貫通孔を介して処理液を吐出する処理位置と基板より外方の待機位置との間で移動させる。【選択図】図3</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
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