SEMICONDUCTOR DEVICE

To provide a semiconductor device capable of improving reliability.SOLUTION: A semiconductor device comprises: a gate electrode; a semiconductor film that has a pair of first channel regions that contain an oxide semiconductor material and are opposed to the gate electrode and provided at a pair of...

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Hauptverfasser:	YOSHITANI TOSHIAKI, ASANO NAOKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	YOSHITANI TOSHIAKI ASANO NAOKI
description	To provide a semiconductor device capable of improving reliability.SOLUTION: A semiconductor device comprises: a gate electrode; a semiconductor film that has a pair of first channel regions that contain an oxide semiconductor material and are opposed to the gate electrode and provided at a pair of end parts in a channel width direction, and a second channel region arranged between the pair of first channel regions; and an electrode opposed to the gate electrode while interposing the semiconductor film therebetween, and selectively arranged in a region at least partially overlapped with the pair of first channel regions, of the pair of first channel regions and the second channel region.SELECTED DRAWING: Figure 1A 【課題】信頼性を向上させることが可能な半導体装置を提供する。【解決手段】ゲート電極と、酸化物半導体材料を含み、かつ、前記ゲート電極に対向するとともにチャネル幅方向の一対の端部に設けられた一対の第１チャネル領域と、一対の前記第１チャネル領域の間に配置された第２チャネル領域とを有する半導体膜と、前記半導体膜を間にして前記ゲート電極に対向し、一対の前記第１チャネル領域および前記第２チャネル領域のうち、一対の前記第１チャネル領域の少なくとも一部に重なる領域に選択的に配置された電極とを備えた半導体装置。【選択図】図１Ａ
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and an electrode opposed to the gate electrode while interposing the semiconductor film therebetween, and selectively arranged in a region at least partially overlapped with the pair of first channel regions, of the pair of first channel regions and the second channel region.SELECTED DRAWING: Figure 1A 【課題】信頼性を向上させることが可能な半導体装置を提供する。【解決手段】ゲート電極と、酸化物半導体材料を含み、かつ、前記ゲート電極に対向するとともにチャネル幅方向の一対の端部に設けられた一対の第１チャネル領域と、一対の前記第１チャネル領域の間に配置された第２チャネル領域とを有する半導体膜と、前記半導体膜を間にして前記ゲート電極に対向し、一対の前記第１チャネル領域および前記第２チャネル領域のうち、一対の前記第１チャネル領域の少なくとも一部に重なる領域に選択的に配置された電極とを備えた半導体装置。【選択図】図１Ａ</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191031&DB=EPODOC&CC=JP&NR=2019192851A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,782,887,25571,76555</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191031&DB=EPODOC&CC=JP&NR=2019192851A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOSHITANI TOSHIAKI</creatorcontrib><creatorcontrib>ASANO NAOKI</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>To provide a semiconductor device capable of improving reliability.SOLUTION: A semiconductor device comprises: a gate electrode; 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ASANO NAOKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2019192851A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YOSHITANI TOSHIAKI</creatorcontrib><creatorcontrib>ASANO NAOKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOSHITANI TOSHIAKI</au><au>ASANO NAOKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>2019-10-31</date><risdate>2019</risdate><abstract>To provide a semiconductor device capable of improving reliability.SOLUTION: A semiconductor device comprises: a gate electrode; a semiconductor film that has a pair of first channel regions that contain an oxide semiconductor material and are opposed to the gate electrode and provided at a pair of end parts in a channel width direction, and a second channel region arranged between the pair of first channel regions; and an electrode opposed to the gate electrode while interposing the semiconductor film therebetween, and selectively arranged in a region at least partially overlapped with the pair of first channel regions, of the pair of first channel regions and the second channel region.SELECTED DRAWING: Figure 1A 【課題】信頼性を向上させることが可能な半導体装置を提供する。【解決手段】ゲート電極と、酸化物半導体材料を含み、かつ、前記ゲート電極に対向するとともにチャネル幅方向の一対の端部に設けられた一対の第１チャネル領域と、一対の前記第１チャネル領域の間に配置された第２チャネル領域とを有する半導体膜と、前記半導体膜を間にして前記ゲート電極に対向し、一対の前記第１チャネル領域および前記第２チャネル領域のうち、一対の前記第１チャネル領域の少なくとも一部に重なる領域に選択的に配置された電極とを備えた半導体装置。【選択図】図１Ａ</abstract><oa>free_for_read</oa></addata></record>
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title	SEMICONDUCTOR DEVICE
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