ORGANIC EL DISPLAY DEVICE
To provide an organic EL display device achieving a reduced resistance in a contact region of a TFT substrate and also enhancing moisture barrier properties furthermore.SOLUTION: An organic EL display device includes an organic EL display layer which is formed above a TFT substrate 1 that is obtaine...
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| creator | KANEGAE ARINOBU |
| description | To provide an organic EL display device achieving a reduced resistance in a contact region of a TFT substrate and also enhancing moisture barrier properties furthermore.SOLUTION: An organic EL display device includes an organic EL display layer which is formed above a TFT substrate 1 that is obtained by forming a TFT on a substrate 2. In the TFT substrate 1, a first moisture barrier layer 6 is formed so as to cover: a gate insulating layer 4 and a gate electrode 5; a contact region of an oxide semiconductor layer 3 other than a connecting portion of the contact region connected to a source electrode 8 and a connecting portion of the contact region connected to a drain electrode 9; and a region on the substrate 2 where the oxide semiconductor layer 3 is not disposed. In the substrate 2, a second moisture barrier layer 22 is formed above a resin substrate 21, the second moisture barrier layer 22 being in contact with the oxide semiconductor layer 3 and the first moisture barrier layer 6. A cathode of the organic EL display layer is located on the inner side than the outer periphery of a region where the first moisture barrier layer 6 and the second moisture barrier layer 22 are in contact with each other.SELECTED DRAWING: Figure 1
【課題】ＴＦＴ基板におけるコンタクト領域の低抵抗化を実現するとともに、水分のバリア性をさらに高めた有機ＥＬ表示装置を提供する。【解決手段】基板２上にＴＦＴを形成してなるＴＦＴ基板１の上方に有機ＥＬ表示層が形成された有機ＥＬ表示装置であって、ＴＦＴ基板１には、ゲート絶縁層４及びゲート電極５と、酸化物半導体層３のコンタクト領域のソース電極８、ドレイン電極９との接合部分を除いた領域と、基板２上の酸化物半導体層３が存在しない領域とを覆うように第１の水分バリア層６が形成される。基板２は、樹脂基板２１上に第２の水分バリア層２２を形成してなり、第２の水分バリア層２２は、酸化物半導体層３及び第１の水分バリア層６と接している。有機ＥＬ表示層の陰極は、第１の水分バリア層６と第２の水分バリア層２２とが接する領域の外周よりも内側に位置する。【選択図】図１ |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2019135778A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2019135778A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2019135778A3</originalsourceid><addsrcrecordid>eNrjZJD0D3J39PN0VnD1UXDxDA7wcYxUcHEN83R25WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaGlobGpubmFo7GRCkCADsTIEQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ORGANIC EL DISPLAY DEVICE</title><source>esp@cenet</source><creator>KANEGAE ARINOBU</creator><creatorcontrib>KANEGAE ARINOBU</creatorcontrib><description>To provide an organic EL display device achieving a reduced resistance in a contact region of a TFT substrate and also enhancing moisture barrier properties furthermore.SOLUTION: An organic EL display device includes an organic EL display layer which is formed above a TFT substrate 1 that is obtained by forming a TFT on a substrate 2. In the TFT substrate 1, a first moisture barrier layer 6 is formed so as to cover: a gate insulating layer 4 and a gate electrode 5; a contact region of an oxide semiconductor layer 3 other than a connecting portion of the contact region connected to a source electrode 8 and a connecting portion of the contact region connected to a drain electrode 9; and a region on the substrate 2 where the oxide semiconductor layer 3 is not disposed. In the substrate 2, a second moisture barrier layer 22 is formed above a resin substrate 21, the second moisture barrier layer 22 being in contact with the oxide semiconductor layer 3 and the first moisture barrier layer 6. A cathode of the organic EL display layer is located on the inner side than the outer periphery of a region where the first moisture barrier layer 6 and the second moisture barrier layer 22 are in contact with each other.SELECTED DRAWING: Figure 1
【課題】ＴＦＴ基板におけるコンタクト領域の低抵抗化を実現するとともに、水分のバリア性をさらに高めた有機ＥＬ表示装置を提供する。【解決手段】基板２上にＴＦＴを形成してなるＴＦＴ基板１の上方に有機ＥＬ表示層が形成された有機ＥＬ表示装置であって、ＴＦＴ基板１には、ゲート絶縁層４及びゲート電極５と、酸化物半導体層３のコンタクト領域のソース電極８、ドレイン電極９との接合部分を除いた領域と、基板２上の酸化物半導体層３が存在しない領域とを覆うように第１の水分バリア層６が形成される。基板２は、樹脂基板２１上に第２の水分バリア層２２を形成してなり、第２の水分バリア層２２は、酸化物半導体層３及び第１の水分バリア層６と接している。有機ＥＬ表示層の陰極は、第１の水分バリア層６と第２の水分バリア層２２とが接する領域の外周よりも内側に位置する。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC HEATING ; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190815&DB=EPODOC&CC=JP&NR=2019135778A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190815&DB=EPODOC&CC=JP&NR=2019135778A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KANEGAE ARINOBU</creatorcontrib><title>ORGANIC EL DISPLAY DEVICE</title><description>To provide an organic EL display device achieving a reduced resistance in a contact region of a TFT substrate and also enhancing moisture barrier properties furthermore.SOLUTION: An organic EL display device includes an organic EL display layer which is formed above a TFT substrate 1 that is obtained by forming a TFT on a substrate 2. In the TFT substrate 1, a first moisture barrier layer 6 is formed so as to cover: a gate insulating layer 4 and a gate electrode 5; a contact region of an oxide semiconductor layer 3 other than a connecting portion of the contact region connected to a source electrode 8 and a connecting portion of the contact region connected to a drain electrode 9; and a region on the substrate 2 where the oxide semiconductor layer 3 is not disposed. In the substrate 2, a second moisture barrier layer 22 is formed above a resin substrate 21, the second moisture barrier layer 22 being in contact with the oxide semiconductor layer 3 and the first moisture barrier layer 6. A cathode of the organic EL display layer is located on the inner side than the outer periphery of a region where the first moisture barrier layer 6 and the second moisture barrier layer 22 are in contact with each other.SELECTED DRAWING: Figure 1
【課題】ＴＦＴ基板におけるコンタクト領域の低抵抗化を実現するとともに、水分のバリア性をさらに高めた有機ＥＬ表示装置を提供する。【解決手段】基板２上にＴＦＴを形成してなるＴＦＴ基板１の上方に有機ＥＬ表示層が形成された有機ＥＬ表示装置であって、ＴＦＴ基板１には、ゲート絶縁層４及びゲート電極５と、酸化物半導体層３のコンタクト領域のソース電極８、ドレイン電極９との接合部分を除いた領域と、基板２上の酸化物半導体層３が存在しない領域とを覆うように第１の水分バリア層６が形成される。基板２は、樹脂基板２１上に第２の水分バリア層２２を形成してなり、第２の水分バリア層２２は、酸化物半導体層３及び第１の水分バリア層６と接している。有機ＥＬ表示層の陰極は、第１の水分バリア層６と第２の水分バリア層２２とが接する領域の外周よりも内側に位置する。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC HEATING</subject><subject>ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJD0D3J39PN0VnD1UXDxDA7wcYxUcHEN83R25WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaGlobGpubmFo7GRCkCADsTIEQ</recordid><startdate>20190815</startdate><enddate>20190815</enddate><creator>KANEGAE ARINOBU</creator><scope>EVB</scope></search><sort><creationdate>20190815</creationdate><title>ORGANIC EL DISPLAY DEVICE</title><author>KANEGAE ARINOBU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2019135778A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC HEATING</topic><topic>ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KANEGAE ARINOBU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KANEGAE ARINOBU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ORGANIC EL DISPLAY DEVICE</title><date>2019-08-15</date><risdate>2019</risdate><abstract>To provide an organic EL display device achieving a reduced resistance in a contact region of a TFT substrate and also enhancing moisture barrier properties furthermore.SOLUTION: An organic EL display device includes an organic EL display layer which is formed above a TFT substrate 1 that is obtained by forming a TFT on a substrate 2. In the TFT substrate 1, a first moisture barrier layer 6 is formed so as to cover: a gate insulating layer 4 and a gate electrode 5; a contact region of an oxide semiconductor layer 3 other than a connecting portion of the contact region connected to a source electrode 8 and a connecting portion of the contact region connected to a drain electrode 9; and a region on the substrate 2 where the oxide semiconductor layer 3 is not disposed. In the substrate 2, a second moisture barrier layer 22 is formed above a resin substrate 21, the second moisture barrier layer 22 being in contact with the oxide semiconductor layer 3 and the first moisture barrier layer 6. A cathode of the organic EL display layer is located on the inner side than the outer periphery of a region where the first moisture barrier layer 6 and the second moisture barrier layer 22 are in contact with each other.SELECTED DRAWING: Figure 1
【課題】ＴＦＴ基板におけるコンタクト領域の低抵抗化を実現するとともに、水分のバリア性をさらに高めた有機ＥＬ表示装置を提供する。【解決手段】基板２上にＴＦＴを形成してなるＴＦＴ基板１の上方に有機ＥＬ表示層が形成された有機ＥＬ表示装置であって、ＴＦＴ基板１には、ゲート絶縁層４及びゲート電極５と、酸化物半導体層３のコンタクト領域のソース電極８、ドレイン電極９との接合部分を除いた領域と、基板２上の酸化物半導体層３が存在しない領域とを覆うように第１の水分バリア層６が形成される。基板２は、樹脂基板２１上に第２の水分バリア層２２を形成してなり、第２の水分バリア層２２は、酸化物半導体層３及び第１の水分バリア層６と接している。有機ＥＬ表示層の陰極は、第１の水分バリア層６と第２の水分バリア層２２とが接する領域の外周よりも内側に位置する。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | ORGANIC EL DISPLAY DEVICE |
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