POWER SEMICONDUCTOR DEVICE

To improve reliability in a power semiconductor device.SOLUTION: A power semiconductor device according to the present invention is provided with: a semiconductor element; a first terminal and a second terminal which transmit current to the semiconductor element; a first base and a second base which sandwich a part of the first terminal, a part of the second terminal, and the semiconductor element between them, and arranged opposite to each other; and an encapsulant which is provided in a space between the first base and the second base, in which the second terminal has an intermediate part which is formed so that distance becomes larger from the first terminal along a direction leaving the semiconductor element, and the intermediate part is provided between the first base and the second base and in the encapsulant.SELECTED DRAWING: Figure 4 【課題】本発明の課題は、パワー半導体装置の信頼性を向上させることである。【解決手段】本発明に係るパワー半導体装置は、半導体素子と、前記半導体素子に電流を伝達する第１端子及び第２端子と、前記第１端子の一部と前記第２端子の一部と前記半導体素子と挟むとともに互いに対向して配置される第１ベース及び第２ベースと、前記第１ベースと前記第２ベースの間の空間に設けられる封止材と、を備え、前記第２端子は、前記半導体素子から離れる方向に沿って前記第１端子から距離が大きくなるように形成される中間部を有し、前記中間部は、前記第１ベースと前記第２ベースの間であってかつ前記封止材内に設けられる。【選択図】図４