SEMICONDUCTOR DEVICE

To achieve high heat-releasing performance of a power semiconductor device and suppression of loss when operating the power semiconductor element.SOLUTION: A semiconductor device 10a includes: a thermoelectric element 3 with Pertier effect and Seebeck effect; a power semiconductor element 1 thermall...

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Bibliographische Detailangaben
Hauptverfasser:	KAI TOSHIHIRO, YAMAGAMI SHIGEHARU, SATO DAIKI, IGARI TAKAYUKI, SHIMOMURA TAKUMI, OKUBO AKINORI, HAYASHI TETSUYA, IWASAKI YUICHI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	To achieve high heat-releasing performance of a power semiconductor device and suppression of loss when operating the power semiconductor element.SOLUTION: A semiconductor device 10a includes: a thermoelectric element 3 with Pertier effect and Seebeck effect; a power semiconductor element 1 thermally connected with one end of the thermoelectric element 3; a control unit 4 executing changeover control between the Pertier effect and Seebeck effect of the thermoelectric element 3.SELECTED DRAWING: Figure 1 【課題】パワー半導体素子の抜熱性能を向上させ、パワー半導体素子の動作時の損失を低減する。【解決手段】半導体装置１０ａは、ペルチェ効果及びゼーベック効果を有する熱電素子３と、熱電素子３の一端に熱的に接続されているパワー半導体素子１と、熱電素子３のペルチェ効果及びゼーベック効果を切り替え制御する制御部４とを備える。【選択図】図１