SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
To provide a semiconductor manufacturing apparatus and a manufacturing method of a semiconductor device capable of reducing waste of gas used for processing of a wafer.SOLUTION: A semiconductor manufacturing apparatus includes a first tank 6 and a second tank 7 for containing gas supplied from a gas...
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| creator | FUKUMAKI NAOMI |
| description | To provide a semiconductor manufacturing apparatus and a manufacturing method of a semiconductor device capable of reducing waste of gas used for processing of a wafer.SOLUTION: A semiconductor manufacturing apparatus includes a first tank 6 and a second tank 7 for containing gas supplied from a gas supply unit 1. The apparatus further includes a chamber 2 for processing a wafer using the gas supplied from the gas supply unit, the first tank, or the second tank. The apparatus further includes a control unit 10 that includes a first measuring instrument 8 and a second measuring instrument 9 for measuring physical quantities in the first tank and the second tank and controls supply of gas to the chamber based on the measured physical quantities.SELECTED DRAWING: Figure 1
【課題】ウェハの処理に用いられるガスの無駄を削減可能な半導体製造装置および半導体装置の製造方法を提供する。【解決手段】半導体製造装置は、ガス供給部１から供給されたガスを収容する第１タンク６及び第２タンク７を備える。装置はさらに、ガス供給部、第１タンク、または第２タンクから供給されたガスを用いてウェハを処理するチャンバ２を備える。装置はさらに、第１タンク及び第２タンク内の物理量を計測する第１計測器８及び第２計測器９を備え、計測された物理量に基づいてチャンバへのガスの供給を制御する制御部１０を備える。【選択図】図１ |
| format | Patent |
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【課題】ウェハの処理に用いられるガスの無駄を削減可能な半導体製造装置および半導体装置の製造方法を提供する。【解決手段】半導体製造装置は、ガス供給部１から供給されたガスを収容する第１タンク６及び第２タンク７を備える。装置はさらに、ガス供給部、第１タンク、または第２タンクから供給されたガスを用いてウェハを処理するチャンバ２を備える。装置はさらに、第１タンク及び第２タンク内の物理量を計測する第１計測器８及び第２計測器９を備え、計測された物理量に基づいてチャンバへのガスの供給を制御する制御部１０を備える。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190322&DB=EPODOC&CC=JP&NR=2019046998A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190322&DB=EPODOC&CC=JP&NR=2019046998A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUKUMAKI NAOMI</creatorcontrib><title>SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE</title><description>To provide a semiconductor manufacturing apparatus and a manufacturing method of a semiconductor device capable of reducing waste of gas used for processing of a wafer.SOLUTION: A semiconductor manufacturing apparatus includes a first tank 6 and a second tank 7 for containing gas supplied from a gas supply unit 1. The apparatus further includes a chamber 2 for processing a wafer using the gas supplied from the gas supply unit, the first tank, or the second tank. The apparatus further includes a control unit 10 that includes a first measuring instrument 8 and a second measuring instrument 9 for measuring physical quantities in the first tank and the second tank and controls supply of gas to the chamber based on the measured physical quantities.SELECTED DRAWING: Figure 1
【課題】ウェハの処理に用いられるガスの無駄を削減可能な半導体製造装置および半導体装置の製造方法を提供する。【解決手段】半導体製造装置は、ガス供給部１から供給されたガスを収容する第１タンク６及び第２タンク７を備える。装置はさらに、ガス供給部、第１タンク、または第２タンクから供給されたガスを用いてウェハを処理するチャンバ２を備える。装置はさらに、第１タンク及び第２タンク内の物理量を計測する第１計測器８及び第２計測器９を備え、計測された物理量に基づいてチャンバへのガスの供給を制御する制御部１０を備える。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgLdvX1dPb3cwl1DvEPUvB19At1c3QOCQ3y9HNXcAwIcAxyDAkNVnD0c0GT83UN8fB3UfB3U0A1wcU1zNPZlYeBNS0xpziVF0pzMyi5uYY4e-imFuTHpxYXJCan5qWWxHsFGBkYWhqYmFlaWjgaE6UIAD85McE</recordid><startdate>20190322</startdate><enddate>20190322</enddate><creator>FUKUMAKI NAOMI</creator><scope>EVB</scope></search><sort><creationdate>20190322</creationdate><title>SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE</title><author>FUKUMAKI NAOMI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2019046998A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>FUKUMAKI NAOMI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FUKUMAKI NAOMI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE</title><date>2019-03-22</date><risdate>2019</risdate><abstract>To provide a semiconductor manufacturing apparatus and a manufacturing method of a semiconductor device capable of reducing waste of gas used for processing of a wafer.SOLUTION: A semiconductor manufacturing apparatus includes a first tank 6 and a second tank 7 for containing gas supplied from a gas supply unit 1. The apparatus further includes a chamber 2 for processing a wafer using the gas supplied from the gas supply unit, the first tank, or the second tank. The apparatus further includes a control unit 10 that includes a first measuring instrument 8 and a second measuring instrument 9 for measuring physical quantities in the first tank and the second tank and controls supply of gas to the chamber based on the measured physical quantities.SELECTED DRAWING: Figure 1
【課題】ウェハの処理に用いられるガスの無駄を削減可能な半導体製造装置および半導体装置の製造方法を提供する。【解決手段】半導体製造装置は、ガス供給部１から供給されたガスを収容する第１タンク６及び第２タンク７を備える。装置はさらに、ガス供給部、第１タンク、または第２タンクから供給されたガスを用いてウェハを処理するチャンバ２を備える。装置はさらに、第１タンク及び第２タンク内の物理量を計測する第１計測器８及び第２計測器９を備え、計測された物理量に基づいてチャンバへのガスの供給を制御する制御部１０を備える。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
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