HEAT TREATMENT APPARATUS, HEAT TREATMENT METHOD, AND STORAGE MEDIUM
To provide a heat treatment apparatus and a heat treatment method effective for improving the uniformity of the film thickness in forming a coating film.SOLUTION: A heat treatment apparatus 20 includes a processing chamber 31 for accommodating a wafer W to be processed, a thermal processing unit 50...
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creator | MORI YASUO FUKUTOME TAKAMASA |
description | To provide a heat treatment apparatus and a heat treatment method effective for improving the uniformity of the film thickness in forming a coating film.SOLUTION: A heat treatment apparatus 20 includes a processing chamber 31 for accommodating a wafer W to be processed, a thermal processing unit 50 that is provided in the processing chamber 31, supports and heats the wafer W, and has a plurality of thermal processing regions 51 aligned at least in the circumferential direction of the wafer W, an air supply port 35 for introducing a gas into the processing chamber 31, an exhaust port 34 for exhausting a gas from the processing chamber 31, a plurality of flow velocity sensors 71 that is aligned in the circumferential direction of the wafer W supported by the thermal processing unit 50 and detects the flow velocity of the air flow, and a control unit 100 that controls the thermal processing unit 50 so as to adjust the temperatures of the plurality of heat treatment regions 51 with a temperature distribution corresponding to the flow velocity of the air flow detected by the plurality of flow velocity sensors 71.SELECTED DRAWING: Figure 3
【課題】被膜形成における膜厚の均一性向上に有効な熱処理装置及び熱処理方法を提供する。【解決手段】熱処理装置20は、処理対象のウェハWを収容する処理室31と、処理室31内に設けられ、ウェハWを支持して加熱する熱処理部であって、当該ウェハWの周方向に少なくとも並ぶ複数の熱処理領域51を有する熱処理部50と、処理室31内に気体を導入する給気口35と、処理室31内から気体を排出する排気口34と、熱処理部50に支持されるウェハWの周方向に並び、気流の流速を検出する複数の流速センサ71と、複数の流速センサ71により検出される気流の流速に応じた温度分布にて複数の熱処理領域51の温度を調節するように熱処理部50を制御する制御部100と、を備える。【選択図】図3 |
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【課題】被膜形成における膜厚の均一性向上に有効な熱処理装置及び熱処理方法を提供する。【解決手段】熱処理装置20は、処理対象のウェハWを収容する処理室31と、処理室31内に設けられ、ウェハWを支持して加熱する熱処理部であって、当該ウェハWの周方向に少なくとも並ぶ複数の熱処理領域51を有する熱処理部50と、処理室31内に気体を導入する給気口35と、処理室31内から気体を排出する排気口34と、熱処理部50に支持されるウェハWの周方向に並び、気流の流速を検出する複数の流速センサ71と、複数の流速センサ71により検出される気流の流速に応じた温度分布にて複数の熱処理領域51の温度を調節するように熱処理部50を制御する制御部100と、を備える。【選択図】図3</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190221&DB=EPODOC&CC=JP&NR=2019029450A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190221&DB=EPODOC&CC=JP&NR=2019029450A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MORI YASUO</creatorcontrib><creatorcontrib>FUKUTOME TAKAMASA</creatorcontrib><title>HEAT TREATMENT APPARATUS, HEAT TREATMENT METHOD, AND STORAGE MEDIUM</title><description>To provide a heat treatment apparatus and a heat treatment method effective for improving the uniformity of the film thickness in forming a coating film.SOLUTION: A heat treatment apparatus 20 includes a processing chamber 31 for accommodating a wafer W to be processed, a thermal processing unit 50 that is provided in the processing chamber 31, supports and heats the wafer W, and has a plurality of thermal processing regions 51 aligned at least in the circumferential direction of the wafer W, an air supply port 35 for introducing a gas into the processing chamber 31, an exhaust port 34 for exhausting a gas from the processing chamber 31, a plurality of flow velocity sensors 71 that is aligned in the circumferential direction of the wafer W supported by the thermal processing unit 50 and detects the flow velocity of the air flow, and a control unit 100 that controls the thermal processing unit 50 so as to adjust the temperatures of the plurality of heat treatment regions 51 with a temperature distribution corresponding to the flow velocity of the air flow detected by the plurality of flow velocity sensors 71.SELECTED DRAWING: Figure 3
【課題】被膜形成における膜厚の均一性向上に有効な熱処理装置及び熱処理方法を提供する。【解決手段】熱処理装置20は、処理対象のウェハWを収容する処理室31と、処理室31内に設けられ、ウェハWを支持して加熱する熱処理部であって、当該ウェハWの周方向に少なくとも並ぶ複数の熱処理領域51を有する熱処理部50と、処理室31内に気体を導入する給気口35と、処理室31内から気体を排出する排気口34と、熱処理部50に支持されるウェハWの周方向に並び、気流の流速を検出する複数の流速センサ71と、複数の流速センサ71により検出される気流の流速に応じた温度分布にて複数の熱処理領域51の温度を調節するように熱処理部50を制御する制御部100と、を備える。【選択図】図3</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD2cHUMUQgJApK-rn4hCo4BAY5BjiGhwToKaDK-riEe_i46Co5-LgrBIf5Bju6uQDEXz1BfHgbWtMSc4lReKM3NoOTmGuLsoZtakB-fWlyQmJyal1oS7xVgZGBoaWBkaWJq4GhMlCIAbl0rvQ</recordid><startdate>20190221</startdate><enddate>20190221</enddate><creator>MORI YASUO</creator><creator>FUKUTOME TAKAMASA</creator><scope>EVB</scope></search><sort><creationdate>20190221</creationdate><title>HEAT TREATMENT APPARATUS, HEAT TREATMENT METHOD, AND STORAGE MEDIUM</title><author>MORI YASUO ; FUKUTOME TAKAMASA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2019029450A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MORI YASUO</creatorcontrib><creatorcontrib>FUKUTOME TAKAMASA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MORI YASUO</au><au>FUKUTOME TAKAMASA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HEAT TREATMENT APPARATUS, HEAT TREATMENT METHOD, AND STORAGE MEDIUM</title><date>2019-02-21</date><risdate>2019</risdate><abstract>To provide a heat treatment apparatus and a heat treatment method effective for improving the uniformity of the film thickness in forming a coating film.SOLUTION: A heat treatment apparatus 20 includes a processing chamber 31 for accommodating a wafer W to be processed, a thermal processing unit 50 that is provided in the processing chamber 31, supports and heats the wafer W, and has a plurality of thermal processing regions 51 aligned at least in the circumferential direction of the wafer W, an air supply port 35 for introducing a gas into the processing chamber 31, an exhaust port 34 for exhausting a gas from the processing chamber 31, a plurality of flow velocity sensors 71 that is aligned in the circumferential direction of the wafer W supported by the thermal processing unit 50 and detects the flow velocity of the air flow, and a control unit 100 that controls the thermal processing unit 50 so as to adjust the temperatures of the plurality of heat treatment regions 51 with a temperature distribution corresponding to the flow velocity of the air flow detected by the plurality of flow velocity sensors 71.SELECTED DRAWING: Figure 3
【課題】被膜形成における膜厚の均一性向上に有効な熱処理装置及び熱処理方法を提供する。【解決手段】熱処理装置20は、処理対象のウェハWを収容する処理室31と、処理室31内に設けられ、ウェハWを支持して加熱する熱処理部であって、当該ウェハWの周方向に少なくとも並ぶ複数の熱処理領域51を有する熱処理部50と、処理室31内に気体を導入する給気口35と、処理室31内から気体を排出する排気口34と、熱処理部50に支持されるウェハWの周方向に並び、気流の流速を検出する複数の流速センサ71と、複数の流速センサ71により検出される気流の流速に応じた温度分布にて複数の熱処理領域51の温度を調節するように熱処理部50を制御する制御部100と、を備える。【選択図】図3</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | HEAT TREATMENT APPARATUS, HEAT TREATMENT METHOD, AND STORAGE MEDIUM |
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