ETCHING METHOD AND RESIDUE REMOVAL METHOD

To provide an etching method and a residue removal method which do not easily cause damage to a remaining SiOfilm even after an etching residue is removed after etching of a silica based residue.SOLUTION: An etching method for etching a silica-based residue containing a basic component formed on a S...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KOBAYASHI NORIYUKI, DEBARI TOSHINORI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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