ETCHING METHOD AND RESIDUE REMOVAL METHOD
To provide an etching method and a residue removal method which do not easily cause damage to a remaining SiOfilm even after an etching residue is removed after etching of a silica based residue.SOLUTION: An etching method for etching a silica-based residue containing a basic component formed on a S...
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| creator | KOBAYASHI NORIYUKI DEBARI TOSHINORI |
| description | To provide an etching method and a residue removal method which do not easily cause damage to a remaining SiOfilm even after an etching residue is removed after etching of a silica based residue.SOLUTION: An etching method for etching a silica-based residue containing a basic component formed on a SiOfilm includes a first stage of selectively etching a silica-based residue by supplying HF gas, HO gas, or alcohol gas to a substrate to be processed having a SiOfilm on which the silica-based residue is formed and a second stage of removing the etching residue by the first stage after the first stage, and the second stage includes a first step of supplying the HO gas or the alcohol gas to the substrate to be processed and a second step of heating the substrate to be processed after the first step.SELECTED DRAWING: Figure 6
【課題】シリカ系残渣物をエッチング後にエッチング残渣除去を行っても、残存しているＳｉＯ２膜へのダメージが生じ難いエッチング方法および残渣除去方法を提供する。【解決手段】ＳｉＯ２膜に形成された、塩基成分を含むシリカ系残渣物をエッチングするエッチング方法は、シリカ系残渣物が形成されたＳｉＯ２膜を有する被処理基板にＨＦガスと、Ｈ２Ｏガスまたはアルコールガスとを供給してシリカ系残渣物を選択的にエッチングする第１段階と、第１段階の後、第１段階によるエッチング残渣を除去する第２段階とを有し、第２段階は、被処理基板にＨ２Ｏガスまたはアルコールガスを供給する第１工程と、第１工程後の被処理基板を加熱する第２工程とを有する。【選択図】図６ |
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【課題】シリカ系残渣物をエッチング後にエッチング残渣除去を行っても、残存しているＳｉＯ２膜へのダメージが生じ難いエッチング方法および残渣除去方法を提供する。【解決手段】ＳｉＯ２膜に形成された、塩基成分を含むシリカ系残渣物をエッチングするエッチング方法は、シリカ系残渣物が形成されたＳｉＯ２膜を有する被処理基板にＨＦガスと、Ｈ２Ｏガスまたはアルコールガスとを供給してシリカ系残渣物を選択的にエッチングする第１段階と、第１段階の後、第１段階によるエッチング残渣を除去する第２段階とを有し、第２段階は、被処理基板にＨ２Ｏガスまたはアルコールガスを供給する第１工程と、第１工程後の被処理基板を加熱する第２工程とを有する。【選択図】図６</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190131&DB=EPODOC&CC=JP&NR=2019016698A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190131&DB=EPODOC&CC=JP&NR=2019016698A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KOBAYASHI NORIYUKI</creatorcontrib><creatorcontrib>DEBARI TOSHINORI</creatorcontrib><title>ETCHING METHOD AND RESIDUE REMOVAL METHOD</title><description>To provide an etching method and a residue removal method which do not easily cause damage to a remaining SiOfilm even after an etching residue is removed after etching of a silica based residue.SOLUTION: An etching method for etching a silica-based residue containing a basic component formed on a SiOfilm includes a first stage of selectively etching a silica-based residue by supplying HF gas, HO gas, or alcohol gas to a substrate to be processed having a SiOfilm on which the silica-based residue is formed and a second stage of removing the etching residue by the first stage after the first stage, and the second stage includes a first step of supplying the HO gas or the alcohol gas to the substrate to be processed and a second step of heating the substrate to be processed after the first step.SELECTED DRAWING: Figure 6
【課題】シリカ系残渣物をエッチング後にエッチング残渣除去を行っても、残存しているＳｉＯ２膜へのダメージが生じ難いエッチング方法および残渣除去方法を提供する。【解決手段】ＳｉＯ２膜に形成された、塩基成分を含むシリカ系残渣物をエッチングするエッチング方法は、シリカ系残渣物が形成されたＳｉＯ２膜を有する被処理基板にＨＦガスと、Ｈ２Ｏガスまたはアルコールガスとを供給してシリカ系残渣物を選択的にエッチングする第１段階と、第１段階の後、第１段階によるエッチング残渣を除去する第２段階とを有し、第２段階は、被処理基板にＨ２Ｏガスまたはアルコールガスを供給する第１工程と、第１工程後の被処理基板を加熱する第２工程とを有する。【選択図】図６</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB0DXH28PRzV_B1DfHwd1Fw9HNRCHIN9nQJdQXSvv5hjj5QKR4G1rTEnOJUXijNzaDkBtKsm1qQH59aXJCYnJqXWhLvFWBkYGhpYGhmZmnhaEyUIgBhSCS2</recordid><startdate>20190131</startdate><enddate>20190131</enddate><creator>KOBAYASHI NORIYUKI</creator><creator>DEBARI TOSHINORI</creator><scope>EVB</scope></search><sort><creationdate>20190131</creationdate><title>ETCHING METHOD AND RESIDUE REMOVAL METHOD</title><author>KOBAYASHI NORIYUKI ; DEBARI TOSHINORI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2019016698A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KOBAYASHI NORIYUKI</creatorcontrib><creatorcontrib>DEBARI TOSHINORI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KOBAYASHI NORIYUKI</au><au>DEBARI TOSHINORI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ETCHING METHOD AND RESIDUE REMOVAL METHOD</title><date>2019-01-31</date><risdate>2019</risdate><abstract>To provide an etching method and a residue removal method which do not easily cause damage to a remaining SiOfilm even after an etching residue is removed after etching of a silica based residue.SOLUTION: An etching method for etching a silica-based residue containing a basic component formed on a SiOfilm includes a first stage of selectively etching a silica-based residue by supplying HF gas, HO gas, or alcohol gas to a substrate to be processed having a SiOfilm on which the silica-based residue is formed and a second stage of removing the etching residue by the first stage after the first stage, and the second stage includes a first step of supplying the HO gas or the alcohol gas to the substrate to be processed and a second step of heating the substrate to be processed after the first step.SELECTED DRAWING: Figure 6
【課題】シリカ系残渣物をエッチング後にエッチング残渣除去を行っても、残存しているＳｉＯ２膜へのダメージが生じ難いエッチング方法および残渣除去方法を提供する。【解決手段】ＳｉＯ２膜に形成された、塩基成分を含むシリカ系残渣物をエッチングするエッチング方法は、シリカ系残渣物が形成されたＳｉＯ２膜を有する被処理基板にＨＦガスと、Ｈ２Ｏガスまたはアルコールガスとを供給してシリカ系残渣物を選択的にエッチングする第１段階と、第１段階の後、第１段階によるエッチング残渣を除去する第２段階とを有し、第２段階は、被処理基板にＨ２Ｏガスまたはアルコールガスを供給する第１工程と、第１工程後の被処理基板を加熱する第２工程とを有する。【選択図】図６</abstract><oa>free_for_read</oa></addata></record> |
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| title | ETCHING METHOD AND RESIDUE REMOVAL METHOD |
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