SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device having a FINFET.SOLUTION: A semiconductor device comprises: a first N-channel FET(NT1) and a second N-channel FET(NT2) series connected to between an interconnection M1(OUT) for output and an interconnection M1(VSS) for second power supply potential of a 2-input NAND circuit; a local interconnection LIn3 which is arranged, in plan view, between a first N gate electrode G1 of the first N-channel FET(NT1) and a second N gate electrode G2 of the second N-channel FET(NT2), the first N gate electrode G1 and the second N gate electrode G2 extending in the second direction(Y), and which crosses a semiconductor layer FN2 extending in a first direction(X) to extend in the second direction(Y); and an interconnection M1(R) for radiation connected to the local interconnection LIn3.SELECTED DRAWING: Figure 7 【課題】ＦＩＮＦＥＴを有する半導体装置の信頼性を向上する。【解決手段】半導体装置は、２入力ＮＡＮＤ回路の出力用の配線Ｍ１（ＯＵＴ）と第２電源電位用の配線Ｍ１（ＶＳＳ）との間に直列接続された第１Ｎチャネル型ＦＥＴ（ＮＴ１）および第２Ｎチャネル型ＦＥＴ（ＮＴ２）を有する。平面視にて、第２方向（Ｙ）に延在する第１Ｎチャネル型ＦＥＴ（ＮＴ１）の第１Ｎゲート電極Ｇ１および第２Ｎチャネル型ＦＥＴ（ＮＴ２）の第２Ｎゲート電極Ｇ２の間に配置され、第１方向（Ｘ）に延在する半導体層ＦＮ２と交差して、第２方向（Ｙ）に延在するローカル配線ＬＩｎ３には、放熱用の配線Ｍ１（Ｒ）が接続されている。【選択図】図７