COATING FILM STRIPPER, COATING FILM STRIPPING METHOD AND STORAGE MEDIUM
PROBLEM TO BE SOLVED: To restrain occurrence of hump of coating film end, when removing the peripheral edge of the coating film formed on the surface of a wafer, i.e., a substrate with removal liquid.SOLUTION: When removing unnecessary film at the peripheral edge of a coating film by discharging rem...
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| creator | TADOKORO MASATAKA TAKAYANAGI YASUHARU HASHIMOTO TAKASHI NAGAKANE HIRAKU |
| description | PROBLEM TO BE SOLVED: To restrain occurrence of hump of coating film end, when removing the peripheral edge of the coating film formed on the surface of a wafer, i.e., a substrate with removal liquid.SOLUTION: When removing unnecessary film at the peripheral edge of a coating film by discharging removal liquid from a removal liquid nozzle 3 to the peripheral edge of a wafer W rotating by means of a spin chuck 11, while rotating the wafer W with a first number of revolutions of 2300 rpm or more, the removal liquid supply position is shifted from the peripheral edge position to a cut position on the farther inward side than the peripheral edge position. Next, after the supply position reaches the cut position, the supply position is shifted from the cut position to the peripheral edge side of the wafer W within 1 sec. When rotating the wafer W with a number of revolutions of 2300 rpm or more, a large centrifugal force acts on the liquid flow of the removal liquid on the wafer surface, and the removal liquid is pressed to the outside of the wafer W. Consequently, infiltration of the removal liquid to the coating film end is restrained, and occurrence of hump of the coating film end is restrained.SELECTED DRAWING: Figure 5
【課題】 基板であるウエハ表面に形成された塗布膜の周縁部を除去液により除去するにあたり、塗布膜端部の盛り上がり（ハンプ）の発生を抑制すること。【解決手段】スピンチャック１１により回転するウエハＷの周縁部に、除去液ノズル３から除去液を吐出して、塗布膜の周縁部の不要な膜を除去するにあたり、ウエハＷを２３００ｒｐｍ以上の第１の回転数で回転させた状態で、除去液の供給位置を、周縁位置から、当該周縁位置よりも内方側のカット位置に移動させる。次いで、供給位置がカット位置に達した後、１秒以内にカット位置からウエハＷの周縁側に供給位置を移動させる。ウエハＷを２３００ｒｐｍ以上の大きな回転数で回転することにより、ウエハ表面の除去液の液流に大きな遠心力が作用し、除去液がウエハＷの外側に押圧される。これにより、除去液が塗布膜端部へ浸透することが抑えられ、塗布膜端部の盛り上がりの発生が抑制される。【選択図】図５ |
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【課題】 基板であるウエハ表面に形成された塗布膜の周縁部を除去液により除去するにあたり、塗布膜端部の盛り上がり（ハンプ）の発生を抑制すること。【解決手段】スピンチャック１１により回転するウエハＷの周縁部に、除去液ノズル３から除去液を吐出して、塗布膜の周縁部の不要な膜を除去するにあたり、ウエハＷを２３００ｒｐｍ以上の第１の回転数で回転させた状態で、除去液の供給位置を、周縁位置から、当該周縁位置よりも内方側のカット位置に移動させる。次いで、供給位置がカット位置に達した後、１秒以内にカット位置からウエハＷの周縁側に供給位置を移動させる。ウエハＷを２３００ｒｐｍ以上の大きな回転数で回転することにより、ウエハ表面の除去液の液流に大きな遠心力が作用し、除去液がウエハＷの外側に押圧される。これにより、除去液が塗布膜端部へ浸透することが抑えられ、塗布膜端部の盛り上がりの発生が抑制される。【選択図】図５</description><language>eng ; jpn</language><subject>APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL ; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ; BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PERFORMING OPERATIONS ; PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL ; SEMICONDUCTOR DEVICES ; SPRAYING OR ATOMISING IN GENERAL ; TRANSPORTING</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180802&DB=EPODOC&CC=JP&NR=2018121045A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180802&DB=EPODOC&CC=JP&NR=2018121045A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TADOKORO MASATAKA</creatorcontrib><creatorcontrib>TAKAYANAGI YASUHARU</creatorcontrib><creatorcontrib>HASHIMOTO TAKASHI</creatorcontrib><creatorcontrib>NAGAKANE HIRAKU</creatorcontrib><title>COATING FILM STRIPPER, COATING FILM STRIPPING METHOD AND STORAGE MEDIUM</title><description>PROBLEM TO BE SOLVED: To restrain occurrence of hump of coating film end, when removing the peripheral edge of the coating film formed on the surface of a wafer, i.e., a substrate with removal liquid.SOLUTION: When removing unnecessary film at the peripheral edge of a coating film by discharging removal liquid from a removal liquid nozzle 3 to the peripheral edge of a wafer W rotating by means of a spin chuck 11, while rotating the wafer W with a first number of revolutions of 2300 rpm or more, the removal liquid supply position is shifted from the peripheral edge position to a cut position on the farther inward side than the peripheral edge position. Next, after the supply position reaches the cut position, the supply position is shifted from the cut position to the peripheral edge side of the wafer W within 1 sec. When rotating the wafer W with a number of revolutions of 2300 rpm or more, a large centrifugal force acts on the liquid flow of the removal liquid on the wafer surface, and the removal liquid is pressed to the outside of the wafer W. Consequently, infiltration of the removal liquid to the coating film end is restrained, and occurrence of hump of the coating film end is restrained.SELECTED DRAWING: Figure 5
【課題】 基板であるウエハ表面に形成された塗布膜の周縁部を除去液により除去するにあたり、塗布膜端部の盛り上がり（ハンプ）の発生を抑制すること。【解決手段】スピンチャック１１により回転するウエハＷの周縁部に、除去液ノズル３から除去液を吐出して、塗布膜の周縁部の不要な膜を除去するにあたり、ウエハＷを２３００ｒｐｍ以上の第１の回転数で回転させた状態で、除去液の供給位置を、周縁位置から、当該周縁位置よりも内方側のカット位置に移動させる。次いで、供給位置がカット位置に達した後、１秒以内にカット位置からウエハＷの周縁側に供給位置を移動させる。ウエハＷを２３００ｒｐｍ以上の大きな回転数で回転することにより、ウエハ表面の除去液の液流に大きな遠心力が作用し、除去液がウエハＷの外側に押圧される。これにより、除去液が塗布膜端部へ浸透することが抑えられ、塗布膜端部の盛り上がりの発生が抑制される。【選択図】図５</description><subject>APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</subject><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PERFORMING OPERATIONS</subject><subject>PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPRAYING OR ATOMISING IN GENERAL</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB39ncM8fRzV3Dz9PFVCA4J8gwIcA3SUcAiDOL6uoZ4-LsoOPq5AAX9gxzdXYFCLp6hvjwMrGmJOcWpvFCam0HJzTXE2UM3tSA_PrW4IDE5NS-1JN4rwMjA0MLQyNDAxNTRmChFACUZLNs</recordid><startdate>20180802</startdate><enddate>20180802</enddate><creator>TADOKORO MASATAKA</creator><creator>TAKAYANAGI YASUHARU</creator><creator>HASHIMOTO TAKASHI</creator><creator>NAGAKANE HIRAKU</creator><scope>EVB</scope></search><sort><creationdate>20180802</creationdate><title>COATING FILM STRIPPER, COATING FILM STRIPPING METHOD AND STORAGE MEDIUM</title><author>TADOKORO MASATAKA ; TAKAYANAGI YASUHARU ; HASHIMOTO TAKASHI ; NAGAKANE HIRAKU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2018121045A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2018</creationdate><topic>APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</topic><topic>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PERFORMING OPERATIONS</topic><topic>PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPRAYING OR ATOMISING IN GENERAL</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>TADOKORO MASATAKA</creatorcontrib><creatorcontrib>TAKAYANAGI YASUHARU</creatorcontrib><creatorcontrib>HASHIMOTO TAKASHI</creatorcontrib><creatorcontrib>NAGAKANE HIRAKU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TADOKORO MASATAKA</au><au>TAKAYANAGI YASUHARU</au><au>HASHIMOTO TAKASHI</au><au>NAGAKANE HIRAKU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>COATING FILM STRIPPER, COATING FILM STRIPPING METHOD AND STORAGE MEDIUM</title><date>2018-08-02</date><risdate>2018</risdate><abstract>PROBLEM TO BE SOLVED: To restrain occurrence of hump of coating film end, when removing the peripheral edge of the coating film formed on the surface of a wafer, i.e., a substrate with removal liquid.SOLUTION: When removing unnecessary film at the peripheral edge of a coating film by discharging removal liquid from a removal liquid nozzle 3 to the peripheral edge of a wafer W rotating by means of a spin chuck 11, while rotating the wafer W with a first number of revolutions of 2300 rpm or more, the removal liquid supply position is shifted from the peripheral edge position to a cut position on the farther inward side than the peripheral edge position. Next, after the supply position reaches the cut position, the supply position is shifted from the cut position to the peripheral edge side of the wafer W within 1 sec. When rotating the wafer W with a number of revolutions of 2300 rpm or more, a large centrifugal force acts on the liquid flow of the removal liquid on the wafer surface, and the removal liquid is pressed to the outside of the wafer W. Consequently, infiltration of the removal liquid to the coating film end is restrained, and occurrence of hump of the coating film end is restrained.SELECTED DRAWING: Figure 5
【課題】 基板であるウエハ表面に形成された塗布膜の周縁部を除去液により除去するにあたり、塗布膜端部の盛り上がり（ハンプ）の発生を抑制すること。【解決手段】スピンチャック１１により回転するウエハＷの周縁部に、除去液ノズル３から除去液を吐出して、塗布膜の周縁部の不要な膜を除去するにあたり、ウエハＷを２３００ｒｐｍ以上の第１の回転数で回転させた状態で、除去液の供給位置を、周縁位置から、当該周縁位置よりも内方側のカット位置に移動させる。次いで、供給位置がカット位置に達した後、１秒以内にカット位置からウエハＷの周縁側に供給位置を移動させる。ウエハＷを２３００ｒｐｍ以上の大きな回転数で回転することにより、ウエハ表面の除去液の液流に大きな遠心力が作用し、除去液がウエハＷの外側に押圧される。これにより、除去液が塗布膜端部へ浸透することが抑えられ、塗布膜端部の盛り上がりの発生が抑制される。【選択図】図５</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL TRANSPORTING |
| title | COATING FILM STRIPPER, COATING FILM STRIPPING METHOD AND STORAGE MEDIUM |
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