GAS-INTRODUCTION NOZZLE, PROCESS CHAMBER, AND PLASMA PROCESSING METHOD
PROBLEM TO BE SOLVED: To enable gas introduction into a process chamber from a plurality of positions, and to facilitate adjustment of a gas flow rate for each gas.SOLUTION: A gas-introduction nozzle is provided at each of a plurality of positions in a process chamber for introducing gas into the pr...
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| creator | TAKEDA ETSUJI ISHIDA YUDAI NAKADA MASAO |
| description | PROBLEM TO BE SOLVED: To enable gas introduction into a process chamber from a plurality of positions, and to facilitate adjustment of a gas flow rate for each gas.SOLUTION: A gas-introduction nozzle is provided at each of a plurality of positions in a process chamber for introducing gas into the process chamber. The gas-introduction nozzle comprises: an outer peripheral wall part having a nozzle outlet at one end, and an intermediate space communicating with the nozzle outlet; a gas supply part communicating with the intermediate space; and a regulator valve disposed in an outer peripheral wall part, of which a position can be adjusted with respect to the outer peripheral wall part. The gas-introduction nozzle has an adjustment space in addition to the intermediate space. The regulator valve changes a gas-passage shape of the adjustment space according to the position with respect to the outer peripheral wall part to adjust a flow rate of the gas supplied to the nozzle outlet.SELECTED DRAWING: Figure 1
【課題】処理室におけるガス導入を複数箇所で導入可能とし、かつ個別にガスの流量を調整することを容易にする。【解決手段】処理室内に複数箇所設けられて処理室内にガスを導入するノズルであって、一端にノズル口を有し、ノズル口に連通する中間空間を有する外周壁部と、中間空間に連なるガス供給部と、外周壁部内に配置され、外周壁部に対する位置の調整が可能な調整弁を有し、中間空間に調整空間を有し、調整弁は、外周壁部に対する位置に応じて調整空間のガス通過形状を変化させてノズル口に供給されるガス流量を調整する。【選択図】図１ |
| format | Patent |
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【課題】処理室におけるガス導入を複数箇所で導入可能とし、かつ個別にガスの流量を調整することを容易にする。【解決手段】処理室内に複数箇所設けられて処理室内にガスを導入するノズルであって、一端にノズル口を有し、ノズル口に連通する中間空間を有する外周壁部と、中間空間に連なるガス供給部と、外周壁部内に配置され、外周壁部に対する位置の調整が可能な調整弁を有し、中間空間に調整空間を有し、調整弁は、外周壁部に対する位置に応じて調整空間のガス通過形状を変化させてノズル口に供給されるガス流量を調整する。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180628&DB=EPODOC&CC=JP&NR=2018101713A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180628&DB=EPODOC&CC=JP&NR=2018101713A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKEDA ETSUJI</creatorcontrib><creatorcontrib>ISHIDA YUDAI</creatorcontrib><creatorcontrib>NAKADA MASAO</creatorcontrib><title>GAS-INTRODUCTION NOZZLE, PROCESS CHAMBER, AND PLASMA PROCESSING METHOD</title><description>PROBLEM TO BE SOLVED: To enable gas introduction into a process chamber from a plurality of positions, and to facilitate adjustment of a gas flow rate for each gas.SOLUTION: A gas-introduction nozzle is provided at each of a plurality of positions in a process chamber for introducing gas into the process chamber. The gas-introduction nozzle comprises: an outer peripheral wall part having a nozzle outlet at one end, and an intermediate space communicating with the nozzle outlet; a gas supply part communicating with the intermediate space; and a regulator valve disposed in an outer peripheral wall part, of which a position can be adjusted with respect to the outer peripheral wall part. The gas-introduction nozzle has an adjustment space in addition to the intermediate space. The regulator valve changes a gas-passage shape of the adjustment space according to the position with respect to the outer peripheral wall part to adjust a flow rate of the gas supplied to the nozzle outlet.SELECTED DRAWING: Figure 1
【課題】処理室におけるガス導入を複数箇所で導入可能とし、かつ個別にガスの流量を調整することを容易にする。【解決手段】処理室内に複数箇所設けられて処理室内にガスを導入するノズルであって、一端にノズル口を有し、ノズル口に連通する中間空間を有する外周壁部と、中間空間に連なるガス供給部と、外周壁部内に配置され、外周壁部に対する位置の調整が可能な調整弁を有し、中間空間に調整空間を有し、調整弁は、外周壁部に対する位置に応じて調整空間のガス通過形状を変化させてノズル口に供給されるガス流量を調整する。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHBzdwzW9fQLCfJ3CXUO8fT3U_Dzj4rycdVRCAjyd3YNDlZw9nD0dXIN0lFw9HNRCPBxDPZ1hMl5-rkr-LqGePi78DCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwNDC0MDQ3NDY0djohQBAAzvLLU</recordid><startdate>20180628</startdate><enddate>20180628</enddate><creator>TAKEDA ETSUJI</creator><creator>ISHIDA YUDAI</creator><creator>NAKADA MASAO</creator><scope>EVB</scope></search><sort><creationdate>20180628</creationdate><title>GAS-INTRODUCTION NOZZLE, PROCESS CHAMBER, AND PLASMA PROCESSING METHOD</title><author>TAKEDA ETSUJI ; ISHIDA YUDAI ; NAKADA MASAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2018101713A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKEDA ETSUJI</creatorcontrib><creatorcontrib>ISHIDA YUDAI</creatorcontrib><creatorcontrib>NAKADA MASAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKEDA ETSUJI</au><au>ISHIDA YUDAI</au><au>NAKADA MASAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GAS-INTRODUCTION NOZZLE, PROCESS CHAMBER, AND PLASMA PROCESSING METHOD</title><date>2018-06-28</date><risdate>2018</risdate><abstract>PROBLEM TO BE SOLVED: To enable gas introduction into a process chamber from a plurality of positions, and to facilitate adjustment of a gas flow rate for each gas.SOLUTION: A gas-introduction nozzle is provided at each of a plurality of positions in a process chamber for introducing gas into the process chamber. The gas-introduction nozzle comprises: an outer peripheral wall part having a nozzle outlet at one end, and an intermediate space communicating with the nozzle outlet; a gas supply part communicating with the intermediate space; and a regulator valve disposed in an outer peripheral wall part, of which a position can be adjusted with respect to the outer peripheral wall part. The gas-introduction nozzle has an adjustment space in addition to the intermediate space. The regulator valve changes a gas-passage shape of the adjustment space according to the position with respect to the outer peripheral wall part to adjust a flow rate of the gas supplied to the nozzle outlet.SELECTED DRAWING: Figure 1
【課題】処理室におけるガス導入を複数箇所で導入可能とし、かつ個別にガスの流量を調整することを容易にする。【解決手段】処理室内に複数箇所設けられて処理室内にガスを導入するノズルであって、一端にノズル口を有し、ノズル口に連通する中間空間を有する外周壁部と、中間空間に連なるガス供給部と、外周壁部内に配置され、外周壁部に対する位置の調整が可能な調整弁を有し、中間空間に調整空間を有し、調整弁は、外周壁部に対する位置に応じて調整空間のガス通過形状を変化させてノズル口に供給されるガス流量を調整する。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | GAS-INTRODUCTION NOZZLE, PROCESS CHAMBER, AND PLASMA PROCESSING METHOD |
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