MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a technique for preventing occurrence of crack in the resist, when coating the upper surface of a SiC semiconductor substrate with resist by spin coating, and then the SiC semiconductor substrate is exposed to high temperature.SOLUTION: A manufacturing method of semi...

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Bibliographische Detailangaben
Hauptverfasser: TAKEUCHI YUICHI, WAKASUGI YUKIHIRO, SOEJIMA SHIGEMASA
Format: Patent
Sprache:eng ; jpn
Schlagworte:
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