MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a technique for preventing occurrence of crack in the resist, when coating the upper surface of a SiC semiconductor substrate with resist by spin coating, and then the SiC semiconductor substrate is exposed to high temperature.SOLUTION: A manufacturing method of semi...
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| creator | TAKEUCHI YUICHI WAKASUGI YUKIHIRO SOEJIMA SHIGEMASA |
| description | PROBLEM TO BE SOLVED: To provide a technique for preventing occurrence of crack in the resist, when coating the upper surface of a SiC semiconductor substrate with resist by spin coating, and then the SiC semiconductor substrate is exposed to high temperature.SOLUTION: A manufacturing method of semiconductor device includes a step of forming an active region and a peripheral region on the upper surface of the SiC semiconductor substrate, where the active region has a trench structure, the peripheral region surrounds the active region, and the upper surface of the SiC semiconductor substrate in at least a part of the peripheral region projects above the upper surface of the SiC semiconductor substrate in the active region, and a step of coating the upper surface of the SiC semiconductor substrate with resist by spin coating.SELECTED DRAWING: Figure 4
【課題】ＳｉＣ半導体基板の上面に、スピンコート法によってレジストを塗布し、その後にＳｉＣ半導体基板が高温に曝される際に、レジストにおいてクラックが発生することを防止することが可能な技術を提供する。【解決手段】本明細書は、半導体装置の製造方法を開示する。その製造方法は、ＳｉＣ半導体基板の上面に、アクティブ領域と周辺領域を形成する工程であって、アクティブ領域はトレンチ構造を有しており、周辺領域はアクティブ領域を取り囲んでおり、周辺領域の少なくとも一部におけるＳｉＣ半導体基板の上面が、アクティブ領域におけるＳｉＣ半導体基板の上面よりも上方へ突出しているように、アクティブ領域と周辺領域を形成する工程と、ＳｉＣ半導体基板の上面に、スピンコート法によりレジストを塗布する工程を備えている。【選択図】図４ |
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【課題】ＳｉＣ半導体基板の上面に、スピンコート法によってレジストを塗布し、その後にＳｉＣ半導体基板が高温に曝される際に、レジストにおいてクラックが発生することを防止することが可能な技術を提供する。【解決手段】本明細書は、半導体装置の製造方法を開示する。その製造方法は、ＳｉＣ半導体基板の上面に、アクティブ領域と周辺領域を形成する工程であって、アクティブ領域はトレンチ構造を有しており、周辺領域はアクティブ領域を取り囲んでおり、周辺領域の少なくとも一部におけるＳｉＣ半導体基板の上面が、アクティブ領域におけるＳｉＣ半導体基板の上面よりも上方へ突出しているように、アクティブ領域と周辺領域を形成する工程と、ＳｉＣ半導体基板の上面に、スピンコート法によりレジストを塗布する工程を備えている。【選択図】図４</description><language>eng ; jpn</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180531&DB=EPODOC&CC=JP&NR=2018085417A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180531&DB=EPODOC&CC=JP&NR=2018085417A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKEUCHI YUICHI</creatorcontrib><creatorcontrib>WAKASUGI YUKIHIRO</creatorcontrib><creatorcontrib>SOEJIMA SHIGEMASA</creatorcontrib><title>MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a technique for preventing occurrence of crack in the resist, when coating the upper surface of a SiC semiconductor substrate with resist by spin coating, and then the SiC semiconductor substrate is exposed to high temperature.SOLUTION: A manufacturing method of semiconductor device includes a step of forming an active region and a peripheral region on the upper surface of the SiC semiconductor substrate, where the active region has a trench structure, the peripheral region surrounds the active region, and the upper surface of the SiC semiconductor substrate in at least a part of the peripheral region projects above the upper surface of the SiC semiconductor substrate in the active region, and a step of coating the upper surface of the SiC semiconductor substrate with resist by spin coating.SELECTED DRAWING: Figure 4
【課題】ＳｉＣ半導体基板の上面に、スピンコート法によってレジストを塗布し、その後にＳｉＣ半導体基板が高温に曝される際に、レジストにおいてクラックが発生することを防止することが可能な技術を提供する。【解決手段】本明細書は、半導体装置の製造方法を開示する。その製造方法は、ＳｉＣ半導体基板の上面に、アクティブ領域と周辺領域を形成する工程であって、アクティブ領域はトレンチ構造を有しており、周辺領域はアクティブ領域を取り囲んでおり、周辺領域の少なくとも一部におけるＳｉＣ半導体基板の上面が、アクティブ領域におけるＳｉＣ半導体基板の上面よりも上方へ突出しているように、アクティブ領域と周辺領域を形成する工程と、ＳｉＣ半導体基板の上面に、スピンコート法によりレジストを塗布する工程を備えている。【選択図】図４</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDxdfQLdXN0DgkN8vRzV_B1DfHwd1Hwd1MIdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhhYGFqYmhuaOxkQpAgDyoiXI</recordid><startdate>20180531</startdate><enddate>20180531</enddate><creator>TAKEUCHI YUICHI</creator><creator>WAKASUGI YUKIHIRO</creator><creator>SOEJIMA SHIGEMASA</creator><scope>EVB</scope></search><sort><creationdate>20180531</creationdate><title>MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE</title><author>TAKEUCHI YUICHI ; WAKASUGI YUKIHIRO ; SOEJIMA SHIGEMASA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2018085417A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2018</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKEUCHI YUICHI</creatorcontrib><creatorcontrib>WAKASUGI YUKIHIRO</creatorcontrib><creatorcontrib>SOEJIMA SHIGEMASA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKEUCHI YUICHI</au><au>WAKASUGI YUKIHIRO</au><au>SOEJIMA SHIGEMASA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE</title><date>2018-05-31</date><risdate>2018</risdate><abstract>PROBLEM TO BE SOLVED: To provide a technique for preventing occurrence of crack in the resist, when coating the upper surface of a SiC semiconductor substrate with resist by spin coating, and then the SiC semiconductor substrate is exposed to high temperature.SOLUTION: A manufacturing method of semiconductor device includes a step of forming an active region and a peripheral region on the upper surface of the SiC semiconductor substrate, where the active region has a trench structure, the peripheral region surrounds the active region, and the upper surface of the SiC semiconductor substrate in at least a part of the peripheral region projects above the upper surface of the SiC semiconductor substrate in the active region, and a step of coating the upper surface of the SiC semiconductor substrate with resist by spin coating.SELECTED DRAWING: Figure 4
【課題】ＳｉＣ半導体基板の上面に、スピンコート法によってレジストを塗布し、その後にＳｉＣ半導体基板が高温に曝される際に、レジストにおいてクラックが発生することを防止することが可能な技術を提供する。【解決手段】本明細書は、半導体装置の製造方法を開示する。その製造方法は、ＳｉＣ半導体基板の上面に、アクティブ領域と周辺領域を形成する工程であって、アクティブ領域はトレンチ構造を有しており、周辺領域はアクティブ領域を取り囲んでおり、周辺領域の少なくとも一部におけるＳｉＣ半導体基板の上面が、アクティブ領域におけるＳｉＣ半導体基板の上面よりも上方へ突出しているように、アクティブ領域と周辺領域を形成する工程と、ＳｉＣ半導体基板の上面に、スピンコート法によりレジストを塗布する工程を備えている。【選択図】図４</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
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