FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS
PROBLEM TO BE SOLVED: To provide a film deposition method and film deposition apparatus, capable of more uniformly forming the thickness of a film deposition layer on the surface of a substrate and more uniformly forming the state of covering the film deposition layer in a trench, etc., on the surfa...
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| creator | ASAKAWA KEIICHIRO KOKAZE YUTAKA |
| description | PROBLEM TO BE SOLVED: To provide a film deposition method and film deposition apparatus, capable of more uniformly forming the thickness of a film deposition layer on the surface of a substrate and more uniformly forming the state of covering the film deposition layer in a trench, etc., on the surface of the substrate.SOLUTION: The film deposition method comprises: facing a substrate having a trench, etc., provided in a vacuum chamber to a target material; and forming a film deposition layer in the trench, etc., and on the surface of the substrate in the outside of the trench, etc., by sputtering the target material. The film deposition layer formed on the bottom surface of the trench, etc., and on the surface of the substrate in the outside of the trench, etc., is subjected to etch-back by generating plasma in the vacuum chamber while generating a magnetic field stronger at the outer periphery of the substrate than that at the center of the substrate by a magnetic coil.SELECTED DRAWING: Figure 2
【課題】基板の面内における成膜層の厚さがより均一になり、さらに、基板の面内におけるトレンチ等における成膜層のカバレッジの状態がより均一になる成膜方法及び成膜装置を提供する。【解決手段】本発明の一形態に係る成膜方法は、真空槽内にトレンチ等が設けられた基板とターゲット材とを対向させ、前記ターゲット材をスパッタリングすることにより、前記トレンチ等内と、前記トレンチ等外の前記基板の表面とに成膜層が形成されることを含む。前記基板の中心よりも前記基板の外周が強い磁場が磁気コイルによって発生させながら前記真空槽内にプラズマを発生させることにより、前記トレンチ等の底面及び前記トレンチ等外の前記基板の前記表面に形成された前記成膜層がエッチバックされる。【選択図】図２ |
| format | Patent |
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【課題】基板の面内における成膜層の厚さがより均一になり、さらに、基板の面内におけるトレンチ等における成膜層のカバレッジの状態がより均一になる成膜方法及び成膜装置を提供する。【解決手段】本発明の一形態に係る成膜方法は、真空槽内にトレンチ等が設けられた基板とターゲット材とを対向させ、前記ターゲット材をスパッタリングすることにより、前記トレンチ等内と、前記トレンチ等外の前記基板の表面とに成膜層が形成されることを含む。前記基板の中心よりも前記基板の外周が強い磁場が磁気コイルによって発生させながら前記真空槽内にプラズマを発生させることにより、前記トレンチ等の底面及び前記トレンチ等外の前記基板の前記表面に形成された前記成膜層がエッチバックされる。【選択図】図２</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180517&DB=EPODOC&CC=JP&NR=2018076561A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180517&DB=EPODOC&CC=JP&NR=2018076561A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ASAKAWA KEIICHIRO</creatorcontrib><creatorcontrib>KOKAZE YUTAKA</creatorcontrib><title>FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS</title><description>PROBLEM TO BE SOLVED: To provide a film deposition method and film deposition apparatus, capable of more uniformly forming the thickness of a film deposition layer on the surface of a substrate and more uniformly forming the state of covering the film deposition layer in a trench, etc., on the surface of the substrate.SOLUTION: The film deposition method comprises: facing a substrate having a trench, etc., provided in a vacuum chamber to a target material; and forming a film deposition layer in the trench, etc., and on the surface of the substrate in the outside of the trench, etc., by sputtering the target material. The film deposition layer formed on the bottom surface of the trench, etc., and on the surface of the substrate in the outside of the trench, etc., is subjected to etch-back by generating plasma in the vacuum chamber while generating a magnetic field stronger at the outer periphery of the substrate than that at the center of the substrate by a magnetic coil.SELECTED DRAWING: Figure 2
【課題】基板の面内における成膜層の厚さがより均一になり、さらに、基板の面内におけるトレンチ等における成膜層のカバレッジの状態がより均一になる成膜方法及び成膜装置を提供する。【解決手段】本発明の一形態に係る成膜方法は、真空槽内にトレンチ等が設けられた基板とターゲット材とを対向させ、前記ターゲット材をスパッタリングすることにより、前記トレンチ等内と、前記トレンチ等外の前記基板の表面とに成膜層が形成されることを含む。前記基板の中心よりも前記基板の外周が強い磁場が磁気コイルによって発生させながら前記真空槽内にプラズマを発生させることにより、前記トレンチ等の底面及び前記トレンチ等外の前記基板の前記表面に形成された前記成膜層がエッチバックされる。【選択図】図２</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBx8_TxVXBxDfAP9gzx9PdT8HUN8fB3UXD0c1FAl3IMCHAMcgwJDeZhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhhYG5mamZoaOxkQpAgAXfSfo</recordid><startdate>20180517</startdate><enddate>20180517</enddate><creator>ASAKAWA KEIICHIRO</creator><creator>KOKAZE YUTAKA</creator><scope>EVB</scope></search><sort><creationdate>20180517</creationdate><title>FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS</title><author>ASAKAWA KEIICHIRO ; KOKAZE YUTAKA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2018076561A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>ASAKAWA KEIICHIRO</creatorcontrib><creatorcontrib>KOKAZE YUTAKA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ASAKAWA KEIICHIRO</au><au>KOKAZE YUTAKA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS</title><date>2018-05-17</date><risdate>2018</risdate><abstract>PROBLEM TO BE SOLVED: To provide a film deposition method and film deposition apparatus, capable of more uniformly forming the thickness of a film deposition layer on the surface of a substrate and more uniformly forming the state of covering the film deposition layer in a trench, etc., on the surface of the substrate.SOLUTION: The film deposition method comprises: facing a substrate having a trench, etc., provided in a vacuum chamber to a target material; and forming a film deposition layer in the trench, etc., and on the surface of the substrate in the outside of the trench, etc., by sputtering the target material. The film deposition layer formed on the bottom surface of the trench, etc., and on the surface of the substrate in the outside of the trench, etc., is subjected to etch-back by generating plasma in the vacuum chamber while generating a magnetic field stronger at the outer periphery of the substrate than that at the center of the substrate by a magnetic coil.SELECTED DRAWING: Figure 2
【課題】基板の面内における成膜層の厚さがより均一になり、さらに、基板の面内におけるトレンチ等における成膜層のカバレッジの状態がより均一になる成膜方法及び成膜装置を提供する。【解決手段】本発明の一形態に係る成膜方法は、真空槽内にトレンチ等が設けられた基板とターゲット材とを対向させ、前記ターゲット材をスパッタリングすることにより、前記トレンチ等内と、前記トレンチ等外の前記基板の表面とに成膜層が形成されることを含む。前記基板の中心よりも前記基板の外周が強い磁場が磁気コイルによって発生させながら前記真空槽内にプラズマを発生させることにより、前記トレンチ等の底面及び前記トレンチ等外の前記基板の前記表面に形成された前記成膜層がエッチバックされる。【選択図】図２</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS |
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