THIN FILM DEPOSITION DEVICE
PROBLEM TO BE SOLVED: To efficiently deposit a film by various film deposition means.SOLUTION: A thin film deposition device 7 comprises a device body 10 having a chamber 11 capable of housing a substrate 8, and a source unit 30. The source unit 30 has a main function part 31 functioning for deposit...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; jpn |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | FUJIMOTO TAKAYOSHI AOE KAZUNORI MORI SEIKI KOMORI TSUNENORI TERADA TOYOJI MASADA HIDEAKI FUKUNAGA SATORU |
| description | PROBLEM TO BE SOLVED: To efficiently deposit a film by various film deposition means.SOLUTION: A thin film deposition device 7 comprises a device body 10 having a chamber 11 capable of housing a substrate 8, and a source unit 30. The source unit 30 has a main function part 31 functioning for depositing a film on the substrate 8 while it is installed in the chamber 11, and a frame 32 to which the main function part 31 is mounted and that can move on a floor. The source unit 30 can be attached to and detached from the device body 10. The device body 10 has an outer wall 12 for constituting the chamber 11, and an opening 13 capable of passing through the main function part 31 is formed on one part of the outer wall 12.SELECTED DRAWING: Figure 1
【課題】効率よく様々な成膜手段による成膜を可能とさせる。【解決手段】薄膜形成装置７は、基材８を収容可能なチャンバー１１を有する装置本体１０と、ソースユニット３０とを備えている。ソースユニット３０は、チャンバー１１内に設置された状態で基材８に対して成膜を行うために機能する主機能部３１、及び、主機能部３１を搭載し床面上を移動可能であるフレーム３２を有している。ソースユニット３０は、装置本体１０に対して着脱可能である。装置本体１０は、チャンバー１１を構成するための外壁１２を有し、外壁１２の一部に主機能部３１を通過可能とさせる開口１３が形成されている。【選択図】 図１ |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2018059170A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2018059170A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2018059170A3</originalsourceid><addsrcrecordid>eNrjZJAO8fD0U3Dz9PFVcHEN8A_2DPH09wMywzydXXkYWNMSc4pTeaE0N4OSm2uIs4duakF-fGpxQWJyal5qSbxXgJGBoYWBqaWhuYGjMVGKAIfyIOE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>THIN FILM DEPOSITION DEVICE</title><source>esp@cenet</source><creator>FUJIMOTO TAKAYOSHI ; AOE KAZUNORI ; MORI SEIKI ; KOMORI TSUNENORI ; TERADA TOYOJI ; MASADA HIDEAKI ; FUKUNAGA SATORU</creator><creatorcontrib>FUJIMOTO TAKAYOSHI ; AOE KAZUNORI ; MORI SEIKI ; KOMORI TSUNENORI ; TERADA TOYOJI ; MASADA HIDEAKI ; FUKUNAGA SATORU</creatorcontrib><description>PROBLEM TO BE SOLVED: To efficiently deposit a film by various film deposition means.SOLUTION: A thin film deposition device 7 comprises a device body 10 having a chamber 11 capable of housing a substrate 8, and a source unit 30. The source unit 30 has a main function part 31 functioning for depositing a film on the substrate 8 while it is installed in the chamber 11, and a frame 32 to which the main function part 31 is mounted and that can move on a floor. The source unit 30 can be attached to and detached from the device body 10. The device body 10 has an outer wall 12 for constituting the chamber 11, and an opening 13 capable of passing through the main function part 31 is formed on one part of the outer wall 12.SELECTED DRAWING: Figure 1
【課題】効率よく様々な成膜手段による成膜を可能とさせる。【解決手段】薄膜形成装置７は、基材８を収容可能なチャンバー１１を有する装置本体１０と、ソースユニット３０とを備えている。ソースユニット３０は、チャンバー１１内に設置された状態で基材８に対して成膜を行うために機能する主機能部３１、及び、主機能部３１を搭載し床面上を移動可能であるフレーム３２を有している。ソースユニット３０は、装置本体１０に対して着脱可能である。装置本体１０は、チャンバー１１を構成するための外壁１２を有し、外壁１２の一部に主機能部３１を通過可能とさせる開口１３が形成されている。【選択図】 図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180412&DB=EPODOC&CC=JP&NR=2018059170A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180412&DB=EPODOC&CC=JP&NR=2018059170A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUJIMOTO TAKAYOSHI</creatorcontrib><creatorcontrib>AOE KAZUNORI</creatorcontrib><creatorcontrib>MORI SEIKI</creatorcontrib><creatorcontrib>KOMORI TSUNENORI</creatorcontrib><creatorcontrib>TERADA TOYOJI</creatorcontrib><creatorcontrib>MASADA HIDEAKI</creatorcontrib><creatorcontrib>FUKUNAGA SATORU</creatorcontrib><title>THIN FILM DEPOSITION DEVICE</title><description>PROBLEM TO BE SOLVED: To efficiently deposit a film by various film deposition means.SOLUTION: A thin film deposition device 7 comprises a device body 10 having a chamber 11 capable of housing a substrate 8, and a source unit 30. The source unit 30 has a main function part 31 functioning for depositing a film on the substrate 8 while it is installed in the chamber 11, and a frame 32 to which the main function part 31 is mounted and that can move on a floor. The source unit 30 can be attached to and detached from the device body 10. The device body 10 has an outer wall 12 for constituting the chamber 11, and an opening 13 capable of passing through the main function part 31 is formed on one part of the outer wall 12.SELECTED DRAWING: Figure 1
【課題】効率よく様々な成膜手段による成膜を可能とさせる。【解決手段】薄膜形成装置７は、基材８を収容可能なチャンバー１１を有する装置本体１０と、ソースユニット３０とを備えている。ソースユニット３０は、チャンバー１１内に設置された状態で基材８に対して成膜を行うために機能する主機能部３１、及び、主機能部３１を搭載し床面上を移動可能であるフレーム３２を有している。ソースユニット３０は、装置本体１０に対して着脱可能である。装置本体１０は、チャンバー１１を構成するための外壁１２を有し、外壁１２の一部に主機能部３１を通過可能とさせる開口１３が形成されている。【選択図】 図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAO8fD0U3Dz9PFVcHEN8A_2DPH09wMywzydXXkYWNMSc4pTeaE0N4OSm2uIs4duakF-fGpxQWJyal5qSbxXgJGBoYWBqaWhuYGjMVGKAIfyIOE</recordid><startdate>20180412</startdate><enddate>20180412</enddate><creator>FUJIMOTO TAKAYOSHI</creator><creator>AOE KAZUNORI</creator><creator>MORI SEIKI</creator><creator>KOMORI TSUNENORI</creator><creator>TERADA TOYOJI</creator><creator>MASADA HIDEAKI</creator><creator>FUKUNAGA SATORU</creator><scope>EVB</scope></search><sort><creationdate>20180412</creationdate><title>THIN FILM DEPOSITION DEVICE</title><author>FUJIMOTO TAKAYOSHI ; AOE KAZUNORI ; MORI SEIKI ; KOMORI TSUNENORI ; TERADA TOYOJI ; MASADA HIDEAKI ; FUKUNAGA SATORU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2018059170A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>FUJIMOTO TAKAYOSHI</creatorcontrib><creatorcontrib>AOE KAZUNORI</creatorcontrib><creatorcontrib>MORI SEIKI</creatorcontrib><creatorcontrib>KOMORI TSUNENORI</creatorcontrib><creatorcontrib>TERADA TOYOJI</creatorcontrib><creatorcontrib>MASADA HIDEAKI</creatorcontrib><creatorcontrib>FUKUNAGA SATORU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FUJIMOTO TAKAYOSHI</au><au>AOE KAZUNORI</au><au>MORI SEIKI</au><au>KOMORI TSUNENORI</au><au>TERADA TOYOJI</au><au>MASADA HIDEAKI</au><au>FUKUNAGA SATORU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THIN FILM DEPOSITION DEVICE</title><date>2018-04-12</date><risdate>2018</risdate><abstract>PROBLEM TO BE SOLVED: To efficiently deposit a film by various film deposition means.SOLUTION: A thin film deposition device 7 comprises a device body 10 having a chamber 11 capable of housing a substrate 8, and a source unit 30. The source unit 30 has a main function part 31 functioning for depositing a film on the substrate 8 while it is installed in the chamber 11, and a frame 32 to which the main function part 31 is mounted and that can move on a floor. The source unit 30 can be attached to and detached from the device body 10. The device body 10 has an outer wall 12 for constituting the chamber 11, and an opening 13 capable of passing through the main function part 31 is formed on one part of the outer wall 12.SELECTED DRAWING: Figure 1
【課題】効率よく様々な成膜手段による成膜を可能とさせる。【解決手段】薄膜形成装置７は、基材８を収容可能なチャンバー１１を有する装置本体１０と、ソースユニット３０とを備えている。ソースユニット３０は、チャンバー１１内に設置された状態で基材８に対して成膜を行うために機能する主機能部３１、及び、主機能部３１を搭載し床面上を移動可能であるフレーム３２を有している。ソースユニット３０は、装置本体１０に対して着脱可能である。装置本体１０は、チャンバー１１を構成するための外壁１２を有し、外壁１２の一部に主機能部３１を通過可能とさせる開口１３が形成されている。【選択図】 図１</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; jpn |
| recordid | cdi_epo_espacenet_JP2018059170A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | THIN FILM DEPOSITION DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T19%3A53%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=FUJIMOTO%20TAKAYOSHI&rft.date=2018-04-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2018059170A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |