OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE AND SOLID-STATE IMAGING DEVICE
PROBLEM TO BE SOLVED: To provide an oxide semiconductor improved in heat resistance, a semiconductor device, a semiconductor memory device and a solid-state imaging device.SOLUTION: An oxide semiconductor is provided according to an embodiment, which comprises indium (In), gallium (Ga) and silicon (...
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| creator | MOMOSE HISAYO SHINREI NOBUTAKA |
| description | PROBLEM TO BE SOLVED: To provide an oxide semiconductor improved in heat resistance, a semiconductor device, a semiconductor memory device and a solid-state imaging device.SOLUTION: An oxide semiconductor is provided according to an embodiment, which comprises indium (In), gallium (Ga) and silicon (Si). In the oxide semiconductor, the composition ratio (Si/In) of Si and In is larger than 0.2. In the oxide semiconductor, the composition ratio (Si/Ga) of Si and Ga is larger than 0.2.SELECTED DRAWING: Figure 1
【課題】耐熱性を向上させた酸化物半導体、半導体装置、半導体記憶装置及び固体撮像装置を提供する。【解決手段】実施形態によれば、インジウム（Ｉｎ）とガリウム（Ｇａ）とシリコン（Ｓｉ）とを含む酸化物半導体であって、前記酸化物半導体におけるＳｉとＩｎの組成比(Ｓｉ／Ｉｎ)は、０．２よりも大きく、前記酸化物半導体におけるＳｉとＧａの組成比(Ｓｉ／Ｇａ)は、０．２よりも大きい酸化物半導体が提供される。【選択図】図１ |
| format | Patent |
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【課題】耐熱性を向上させた酸化物半導体、半導体装置、半導体記憶装置及び固体撮像装置を提供する。【解決手段】実施形態によれば、インジウム（Ｉｎ）とガリウム（Ｇａ）とシリコン（Ｓｉ）とを含む酸化物半導体であって、前記酸化物半導体におけるＳｉとＩｎの組成比(Ｓｉ／Ｉｎ)は、０．２よりも大きく、前記酸化物半導体におけるＳｉとＧａの組成比(Ｓｉ／Ｇａ)は、０．２よりも大きい酸化物半導体が提供される。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180322&DB=EPODOC&CC=JP&NR=2018046152A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180322&DB=EPODOC&CC=JP&NR=2018046152A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MOMOSE HISAYO</creatorcontrib><creatorcontrib>SHINREI NOBUTAKA</creatorcontrib><title>OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE AND SOLID-STATE IMAGING DEVICE</title><description>PROBLEM TO BE SOLVED: To provide an oxide semiconductor improved in heat resistance, a semiconductor device, a semiconductor memory device and a solid-state imaging device.SOLUTION: An oxide semiconductor is provided according to an embodiment, which comprises indium (In), gallium (Ga) and silicon (Si). In the oxide semiconductor, the composition ratio (Si/In) of Si and In is larger than 0.2. In the oxide semiconductor, the composition ratio (Si/Ga) of Si and Ga is larger than 0.2.SELECTED DRAWING: Figure 1
【課題】耐熱性を向上させた酸化物半導体、半導体装置、半導体記憶装置及び固体撮像装置を提供する。【解決手段】実施形態によれば、インジウム（Ｉｎ）とガリウム（Ｇａ）とシリコン（Ｓｉ）とを含む酸化物半導体であって、前記酸化物半導体におけるＳｉとＩｎの組成比(Ｓｉ／Ｉｎ)は、０．２よりも大きく、前記酸化物半導体におけるＳｉとＧａの組成比(Ｓｉ／Ｇａ)は、０．２よりも大きい酸化物半導体が提供される。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEj1j_B0cVUIdvX1dPb3cwl1DvEP0kHlKri4hnk6u6KL-rr6-gdFQiUVHP1cFIL9fTxddINDHENcFTx9Hd09_dyh0jwMrGmJOcWpvFCam0HJzTXE2UM3tSA_PrW4IDE5NS-1JN4rwMjA0MLAxMzQ1MjRmChFAAQtNUk</recordid><startdate>20180322</startdate><enddate>20180322</enddate><creator>MOMOSE HISAYO</creator><creator>SHINREI NOBUTAKA</creator><scope>EVB</scope></search><sort><creationdate>20180322</creationdate><title>OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE AND SOLID-STATE IMAGING DEVICE</title><author>MOMOSE HISAYO ; SHINREI NOBUTAKA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2018046152A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MOMOSE HISAYO</creatorcontrib><creatorcontrib>SHINREI NOBUTAKA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MOMOSE HISAYO</au><au>SHINREI NOBUTAKA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE AND SOLID-STATE IMAGING DEVICE</title><date>2018-03-22</date><risdate>2018</risdate><abstract>PROBLEM TO BE SOLVED: To provide an oxide semiconductor improved in heat resistance, a semiconductor device, a semiconductor memory device and a solid-state imaging device.SOLUTION: An oxide semiconductor is provided according to an embodiment, which comprises indium (In), gallium (Ga) and silicon (Si). In the oxide semiconductor, the composition ratio (Si/In) of Si and In is larger than 0.2. In the oxide semiconductor, the composition ratio (Si/Ga) of Si and Ga is larger than 0.2.SELECTED DRAWING: Figure 1
【課題】耐熱性を向上させた酸化物半導体、半導体装置、半導体記憶装置及び固体撮像装置を提供する。【解決手段】実施形態によれば、インジウム（Ｉｎ）とガリウム（Ｇａ）とシリコン（Ｓｉ）とを含む酸化物半導体であって、前記酸化物半導体におけるＳｉとＩｎの組成比(Ｓｉ／Ｉｎ)は、０．２よりも大きく、前記酸化物半導体におけるＳｉとＧａの組成比(Ｓｉ／Ｇａ)は、０．２よりも大きい酸化物半導体が提供される。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE AND SOLID-STATE IMAGING DEVICE |
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