SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure within a through hole suitable for a power circuit part; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises: an interlayer insulation film II2 having via holes VH1, VH2;...
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| creator | KOSHIMIZU AKIRA FUKAYA KAZUHIDE HANAWA TOSHIKAZU |
| description | PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure within a through hole suitable for a power circuit part; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises: an interlayer insulation film II2 having via holes VH1, VH2; a side wall conductive layer SWC which lies along a side wall surface of the via hole VH1 and contains at least one selected from a group consisting of tungsten, titanium, titanium nitride, tantalum and molybdenum; a second metal wiring layer M2 which is embedded in the via hole VH1 and contains aluminum; and a plug layer PL3 which is embedded in the via hole VH2 and contains at least one selected from a group consisting of tungsten, titanium, titanium nitride, tantalum and molybdenum.SELECTED DRAWING: Figure 5
【課題】パワー系回路部に適した貫通孔内の構成を有する半導体装置およびその製造方法を提供する。【解決手段】層間絶縁膜ＩＩ２は、ビアホールＶＨ１、ＶＨ２を有している。側壁導電層ＳＷＣは、ビアホールＶＨ１の側壁面に沿っており、かつタングステン、チタン、窒化チタン、タンタルおよびモリブデンよりなる群から選ばれる１種以上を含んでいる。第２金属配線層Ｍ２は、ビアホールＶＨ１内を埋め込み、かつアルミニウムを含んでいる。プラグ層ＰＬ３は、ビアホールＶＨ２内を埋め込み、かつタングステン、チタン、窒化チタン、タンタルおよびモリブデンよりなる群から選ばれる１種以上を含んでいる。【選択図】図５ |
| format | Patent |
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【課題】パワー系回路部に適した貫通孔内の構成を有する半導体装置およびその製造方法を提供する。【解決手段】層間絶縁膜ＩＩ２は、ビアホールＶＨ１、ＶＨ２を有している。側壁導電層ＳＷＣは、ビアホールＶＨ１の側壁面に沿っており、かつタングステン、チタン、窒化チタン、タンタルおよびモリブデンよりなる群から選ばれる１種以上を含んでいる。第２金属配線層Ｍ２は、ビアホールＶＨ１内を埋め込み、かつアルミニウムを含んでいる。プラグ層ＰＬ３は、ビアホールＶＨ２内を埋め込み、かつタングステン、チタン、窒化チタン、タンタルおよびモリブデンよりなる群から選ばれる１種以上を含んでいる。【選択図】図５</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180308&DB=EPODOC&CC=JP&NR=2018037434A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180308&DB=EPODOC&CC=JP&NR=2018037434A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KOSHIMIZU AKIRA</creatorcontrib><creatorcontrib>FUKAYA KAZUHIDE</creatorcontrib><creatorcontrib>HANAWA TOSHIKAZU</creatorcontrib><title>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME</title><description>PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure within a through hole suitable for a power circuit part; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises: an interlayer insulation film II2 having via holes VH1, VH2; a side wall conductive layer SWC which lies along a side wall surface of the via hole VH1 and contains at least one selected from a group consisting of tungsten, titanium, titanium nitride, tantalum and molybdenum; a second metal wiring layer M2 which is embedded in the via hole VH1 and contains aluminum; and a plug layer PL3 which is embedded in the via hole VH2 and contains at least one selected from a group consisting of tungsten, titanium, titanium nitride, tantalum and molybdenum.SELECTED DRAWING: Figure 5
【課題】パワー系回路部に適した貫通孔内の構成を有する半導体装置およびその製造方法を提供する。【解決手段】層間絶縁膜ＩＩ２は、ビアホールＶＨ１、ＶＨ２を有している。側壁導電層ＳＷＣは、ビアホールＶＨ１の側壁面に沿っており、かつタングステン、チタン、窒化チタン、タンタルおよびモリブデンよりなる群から選ばれる１種以上を含んでいる。第２金属配線層Ｍ２は、ビアホールＶＨ１内を埋め込み、かつアルミニウムを含んでいる。プラグ層ＰＬ３は、ビアホールＶＨ２内を埋め込み、かつタングステン、チタン、窒化チタン、タンタルおよびモリブデンよりなる群から選ばれる１種以上を含んでいる。【選択図】図５</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAMdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HX0C3VzdA4JDfL0c1fwdQ3x8HdR8HdTCPFwVQh29HXlYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBoYWBsbmJsYmjsZEKQIA0c8pBw</recordid><startdate>20180308</startdate><enddate>20180308</enddate><creator>KOSHIMIZU AKIRA</creator><creator>FUKAYA KAZUHIDE</creator><creator>HANAWA TOSHIKAZU</creator><scope>EVB</scope></search><sort><creationdate>20180308</creationdate><title>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME</title><author>KOSHIMIZU AKIRA ; FUKAYA KAZUHIDE ; HANAWA TOSHIKAZU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2018037434A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KOSHIMIZU AKIRA</creatorcontrib><creatorcontrib>FUKAYA KAZUHIDE</creatorcontrib><creatorcontrib>HANAWA TOSHIKAZU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KOSHIMIZU AKIRA</au><au>FUKAYA KAZUHIDE</au><au>HANAWA TOSHIKAZU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME</title><date>2018-03-08</date><risdate>2018</risdate><abstract>PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure within a through hole suitable for a power circuit part; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises: an interlayer insulation film II2 having via holes VH1, VH2; a side wall conductive layer SWC which lies along a side wall surface of the via hole VH1 and contains at least one selected from a group consisting of tungsten, titanium, titanium nitride, tantalum and molybdenum; a second metal wiring layer M2 which is embedded in the via hole VH1 and contains aluminum; and a plug layer PL3 which is embedded in the via hole VH2 and contains at least one selected from a group consisting of tungsten, titanium, titanium nitride, tantalum and molybdenum.SELECTED DRAWING: Figure 5
【課題】パワー系回路部に適した貫通孔内の構成を有する半導体装置およびその製造方法を提供する。【解決手段】層間絶縁膜ＩＩ２は、ビアホールＶＨ１、ＶＨ２を有している。側壁導電層ＳＷＣは、ビアホールＶＨ１の側壁面に沿っており、かつタングステン、チタン、窒化チタン、タンタルおよびモリブデンよりなる群から選ばれる１種以上を含んでいる。第２金属配線層Ｍ２は、ビアホールＶＨ１内を埋め込み、かつアルミニウムを含んでいる。プラグ層ＰＬ３は、ビアホールＶＨ２内を埋め込み、かつタングステン、チタン、窒化チタン、タンタルおよびモリブデンよりなる群から選ばれる１種以上を含んでいる。【選択図】図５</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
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