SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To inhibit electromagnetic disturbance in a semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises the steps of: arranging a processed substance comprising a semiconductor element, an encapsulation resin layer for encapsulating the semiconductor element and a ground terminal and a signal terminal which are electrically connected to the semiconductor element and protrude from one surface of the encapsulation resin layer and capable of being connected to ground potential, and a jig and tool comprising a firs surface, a second surface, a first groove continuously exposed from the first surface to the second surface and a second groove exposed on the first surface in an overlapping manner such that the ground terminal is inserted in the first groove and the signal terminal is inserted in the second grove and the one surface contacts the first surface; and forming a conductive shield layer so as to cover an exposed part of the encapsulation resin layer and an exposed part of the ground terminal to electrically connect the conductive shield layer and the ground terminal.SELECTED DRAWING: Figure 1 【課題】半導体装置における電磁波障害を抑制することである。【解決手段】半導体装置の製造方法は、半導体素子と、半導体素子を封止する封止樹脂層と、半導体素子に電気的に接続され且つ封止樹脂層の一面から突出するグランド電位に接続可能なグランド端子および信号端子と、を具備する被処理体と、第１の面と、第２の面と、第１の面から第２の面まで連続的に露出する第１の溝と、第１の面に露出する第２の溝と、を具備する治工具と、をグランド端子が第１の溝に挿入され信号端子が第２の溝に挿入されるとともに一面が第１の面に接するように重ね合わせて配置する工程と、封止樹脂層の露出部およびグランド端子の露出部を覆うように導電性シールド層を形成して導電性シールド層とグランド端子との間を電気的に接続する工程と、を具備する。【選択図】図１