DEVICE FOR CONTROLLING POWER CYCLE EVALUATION TEST OF SEMICONDUCTOR ELEMENT
PROBLEM TO BE SOLVED: To provide a device for controlling the power cycle evaluation test of a semiconductor element with which it is possible to simulate a thermal environment condition during an in-service period.SOLUTION: The present invention is characterized in that heat radiation means 10 is c...
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| creator | UMADONO SHINJI OKUHIGASHI YUKI ISHIKAWA HIROYUKI MATSUMURA KEI TAKADA SHINJI |
| description | PROBLEM TO BE SOLVED: To provide a device for controlling the power cycle evaluation test of a semiconductor element with which it is possible to simulate a thermal environment condition during an in-service period.SOLUTION: The present invention is characterized in that heat radiation means 10 is constituted by a heat conduction member 10a having an effective calorific capacity on the surface of a power device 141, a fast-response heat generation unit 10b for initiating heat emission and closely adhered via the heat conduction member 10a, and a constant-temperature cooling unit 10f, and is provided with a temperature sensor 10e for detecting the temperature of the heat radiation face of the power device 141 and a heat radiation control unit 10g for calculating a necessary calorific power by multiplying the temperature on the radiation face by a prescribed coefficient dependent on heat radiation resistance and outputting a control signal to the fast-response heat generation unit 10b.SELECTED DRAWING: Figure 2
【課題】供用期間中の熱環境条件が摸擬できる半導体素子のパワーサイクル評価試験制御装置の提供を目的とする。【解決手段】放熱手段１０を、パワーデバイス１４１の表面に実効熱容量を有する熱伝導材１０ａと、熱伝導材１０ａを介して密着し、熱放出を操作する即応発熱部１０ｂおよび恒温冷却部１０ｆより構成されると共に、パワーデバイス１４１の放熱面の温度を検出する温度センサ１０ｅと、前記放熱面の温度に放熱抵抗に依拠する所定の係数を乗じて必要発熱量を算出し、即応発熱部１０ｂに制御信号を出力する放熱制御部１０ｇとを備えた。【選択図】図２ |
| format | Patent |
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【課題】供用期間中の熱環境条件が摸擬できる半導体素子のパワーサイクル評価試験制御装置の提供を目的とする。【解決手段】放熱手段１０を、パワーデバイス１４１の表面に実効熱容量を有する熱伝導材１０ａと、熱伝導材１０ａを介して密着し、熱放出を操作する即応発熱部１０ｂおよび恒温冷却部１０ｆより構成されると共に、パワーデバイス１４１の放熱面の温度を検出する温度センサ１０ｅと、前記放熱面の温度に放熱抵抗に依拠する所定の係数を乗じて必要発熱量を算出し、即応発熱部１０ｂに制御信号を出力する放熱制御部１０ｇとを備えた。【選択図】図２</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170921&DB=EPODOC&CC=JP&NR=2017166824A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170921&DB=EPODOC&CC=JP&NR=2017166824A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>UMADONO SHINJI</creatorcontrib><creatorcontrib>OKUHIGASHI YUKI</creatorcontrib><creatorcontrib>ISHIKAWA HIROYUKI</creatorcontrib><creatorcontrib>MATSUMURA KEI</creatorcontrib><creatorcontrib>TAKADA SHINJI</creatorcontrib><title>DEVICE FOR CONTROLLING POWER CYCLE EVALUATION TEST OF SEMICONDUCTOR ELEMENT</title><description>PROBLEM TO BE SOLVED: To provide a device for controlling the power cycle evaluation test of a semiconductor element with which it is possible to simulate a thermal environment condition during an in-service period.SOLUTION: The present invention is characterized in that heat radiation means 10 is constituted by a heat conduction member 10a having an effective calorific capacity on the surface of a power device 141, a fast-response heat generation unit 10b for initiating heat emission and closely adhered via the heat conduction member 10a, and a constant-temperature cooling unit 10f, and is provided with a temperature sensor 10e for detecting the temperature of the heat radiation face of the power device 141 and a heat radiation control unit 10g for calculating a necessary calorific power by multiplying the temperature on the radiation face by a prescribed coefficient dependent on heat radiation resistance and outputting a control signal to the fast-response heat generation unit 10b.SELECTED DRAWING: Figure 2
【課題】供用期間中の熱環境条件が摸擬できる半導体素子のパワーサイクル評価試験制御装置の提供を目的とする。【解決手段】放熱手段１０を、パワーデバイス１４１の表面に実効熱容量を有する熱伝導材１０ａと、熱伝導材１０ａを介して密着し、熱放出を操作する即応発熱部１０ｂおよび恒温冷却部１０ｆより構成されると共に、パワーデバイス１４１の放熱面の温度を検出する温度センサ１０ｅと、前記放熱面の温度に放熱抵抗に依拠する所定の係数を乗じて必要発熱量を算出し、即応発熱部１０ｂに制御信号を出力する放熱制御部１０ｇとを備えた。【選択図】図２</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPB2cQ3zdHZVcPMPUnD29wsJ8vfx8fRzVwjwD3cFikQ6-7gquIY5-oQ6hnj6-ymEuAaHKPi7KQS7-noClbuEOocANbr6uPq6-oXwMLCmJeYUp_JCaW4GJTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAjA0NzQzMzCyMTR2OiFAEAAosuZQ</recordid><startdate>20170921</startdate><enddate>20170921</enddate><creator>UMADONO SHINJI</creator><creator>OKUHIGASHI YUKI</creator><creator>ISHIKAWA HIROYUKI</creator><creator>MATSUMURA KEI</creator><creator>TAKADA SHINJI</creator><scope>EVB</scope></search><sort><creationdate>20170921</creationdate><title>DEVICE FOR CONTROLLING POWER CYCLE EVALUATION TEST OF SEMICONDUCTOR ELEMENT</title><author>UMADONO SHINJI ; OKUHIGASHI YUKI ; ISHIKAWA HIROYUKI ; MATSUMURA KEI ; TAKADA SHINJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2017166824A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>UMADONO SHINJI</creatorcontrib><creatorcontrib>OKUHIGASHI YUKI</creatorcontrib><creatorcontrib>ISHIKAWA HIROYUKI</creatorcontrib><creatorcontrib>MATSUMURA KEI</creatorcontrib><creatorcontrib>TAKADA SHINJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>UMADONO SHINJI</au><au>OKUHIGASHI YUKI</au><au>ISHIKAWA HIROYUKI</au><au>MATSUMURA KEI</au><au>TAKADA SHINJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DEVICE FOR CONTROLLING POWER CYCLE EVALUATION TEST OF SEMICONDUCTOR ELEMENT</title><date>2017-09-21</date><risdate>2017</risdate><abstract>PROBLEM TO BE SOLVED: To provide a device for controlling the power cycle evaluation test of a semiconductor element with which it is possible to simulate a thermal environment condition during an in-service period.SOLUTION: The present invention is characterized in that heat radiation means 10 is constituted by a heat conduction member 10a having an effective calorific capacity on the surface of a power device 141, a fast-response heat generation unit 10b for initiating heat emission and closely adhered via the heat conduction member 10a, and a constant-temperature cooling unit 10f, and is provided with a temperature sensor 10e for detecting the temperature of the heat radiation face of the power device 141 and a heat radiation control unit 10g for calculating a necessary calorific power by multiplying the temperature on the radiation face by a prescribed coefficient dependent on heat radiation resistance and outputting a control signal to the fast-response heat generation unit 10b.SELECTED DRAWING: Figure 2
【課題】供用期間中の熱環境条件が摸擬できる半導体素子のパワーサイクル評価試験制御装置の提供を目的とする。【解決手段】放熱手段１０を、パワーデバイス１４１の表面に実効熱容量を有する熱伝導材１０ａと、熱伝導材１０ａを介して密着し、熱放出を操作する即応発熱部１０ｂおよび恒温冷却部１０ｆより構成されると共に、パワーデバイス１４１の放熱面の温度を検出する温度センサ１０ｅと、前記放熱面の温度に放熱抵抗に依拠する所定の係数を乗じて必要発熱量を算出し、即応発熱部１０ｂに制御信号を出力する放熱制御部１０ｇとを備えた。【選択図】図２</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | DEVICE FOR CONTROLLING POWER CYCLE EVALUATION TEST OF SEMICONDUCTOR ELEMENT |
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