PROBE GUIDE PLATE, PROBE DEVICE, AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a probe guide plate of new construction in which two guide plates are stacked one on top of another with high reliability at low cost.SOLUTION: The probe guide plate includes: a first silicon substrate 11; a first recess C1 formed in the top face of the first silicon...

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Hauptverfasser: YAMAGISHI KATSUNORI, SHIMIZU YUICHIRO, FUJIWARA KOSUKE, NAGAI KOJI
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creator YAMAGISHI KATSUNORI
SHIMIZU YUICHIRO
FUJIWARA KOSUKE
NAGAI KOJI
description PROBLEM TO BE SOLVED: To provide a probe guide plate of new construction in which two guide plates are stacked one on top of another with high reliability at low cost.SOLUTION: The probe guide plate includes: a first silicon substrate 11; a first recess C1 formed in the top face of the first silicon substrate 11; a first through-hole TH1 formed on the first silicon substrate 11 at the bottom of the first recess C1; a second silicon substrate 12 directly joined to the top of the first silicon substrate 11; a second recess C2 formed in the underside of the second silicone substrate 12 facing the first recess C1; and a second through-hole TH2 formed in the second silicon substrate 12 at the bottom of the second recess C2 and arranged in correspondence to the first through-hole TH1. A notch part N is formed at the inner wall upper end of the first through-hole TH1 of the first silicon substrate 11.SELECTED DRAWING: Figure 11 【課題】2枚のガイド板が低コストで信頼性よく積層される新規な構造のプローブガイド板を提供する。【解決手段】第1シリコン基板11と、第1シリコン基板11の上面に形成された第1凹部C1と、第1凹部C1の底の第1シリコン基板11に形成された第1貫通孔TH1と、第1シリコン基板11の上に直接接合された第2シリコン基板12と、第2シリコン基板12の下面に、第1凹部C1に対向して形成された第2凹部C2と、第2凹部C2の底の第2シリコン基板12に形成され、第1貫通孔TH1に対応して配置された第2貫通孔TH2とを含み、第1シリコン基板11の第1貫通孔TH1の内壁の上端部にノッチ部Nが形成されている。【選択図】図11
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A notch part N is formed at the inner wall upper end of the first through-hole TH1 of the first silicon substrate 11.SELECTED DRAWING: Figure 11 【課題】2枚のガイド板が低コストで信頼性よく積層される新規な構造のプローブガイド板を提供する。【解決手段】第1シリコン基板11と、第1シリコン基板11の上面に形成された第1凹部C1と、第1凹部C1の底の第1シリコン基板11に形成された第1貫通孔TH1と、第1シリコン基板11の上に直接接合された第2シリコン基板12と、第2シリコン基板12の下面に、第1凹部C1に対向して形成された第2凹部C2と、第2凹部C2の底の第2シリコン基板12に形成され、第1貫通孔TH1に対応して配置された第2貫通孔TH2とを含み、第1シリコン基板11の第1貫通孔TH1の内壁の上端部にノッチ部Nが形成されている。【選択図】図11</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170727&amp;DB=EPODOC&amp;CC=JP&amp;NR=2017129367A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170727&amp;DB=EPODOC&amp;CC=JP&amp;NR=2017129367A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMAGISHI KATSUNORI</creatorcontrib><creatorcontrib>SHIMIZU YUICHIRO</creatorcontrib><creatorcontrib>FUJIWARA KOSUKE</creatorcontrib><creatorcontrib>NAGAI KOJI</creatorcontrib><title>PROBE GUIDE PLATE, PROBE DEVICE, AND MANUFACTURING METHOD THEREOF</title><description>PROBLEM TO BE SOLVED: To provide a probe guide plate of new construction in which two guide plates are stacked one on top of another with high reliability at low cost.SOLUTION: The probe guide plate includes: a first silicon substrate 11; a first recess C1 formed in the top face of the first silicon substrate 11; a first through-hole TH1 formed on the first silicon substrate 11 at the bottom of the first recess C1; a second silicon substrate 12 directly joined to the top of the first silicon substrate 11; a second recess C2 formed in the underside of the second silicone substrate 12 facing the first recess C1; and a second through-hole TH2 formed in the second silicon substrate 12 at the bottom of the second recess C2 and arranged in correspondence to the first through-hole TH1. 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A notch part N is formed at the inner wall upper end of the first through-hole TH1 of the first silicon substrate 11.SELECTED DRAWING: Figure 11 【課題】2枚のガイド板が低コストで信頼性よく積層される新規な構造のプローブガイド板を提供する。【解決手段】第1シリコン基板11と、第1シリコン基板11の上面に形成された第1凹部C1と、第1凹部C1の底の第1シリコン基板11に形成された第1貫通孔TH1と、第1シリコン基板11の上に直接接合された第2シリコン基板12と、第2シリコン基板12の下面に、第1凹部C1に対向して形成された第2凹部C2と、第2凹部C2の底の第2シリコン基板12に形成され、第1貫通孔TH1に対応して配置された第2貫通孔TH2とを含み、第1シリコン基板11の第1貫通孔TH1の内壁の上端部にノッチ部Nが形成されている。【選択図】図11</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title PROBE GUIDE PLATE, PROBE DEVICE, AND MANUFACTURING METHOD THEREOF
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