SAPPHIRE SINGLE CRYSTAL RIBBON, AND PRODUCTION METHOD THEREOF
PROBLEM TO BE SOLVED: To provide a sapphire single crystal that has resistance to a tensile stress, is free of cracks and fractures, and has flexibility, and a production method thereof.SOLUTION: Dies having a slit are arranged in parallel to their width direction in a crucible. An aluminum oxide ra...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; jpn |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | TAKAHASHI MASAYUKI FURUTAKI TOSHIRO SATO TSUGIO |
| description | PROBLEM TO BE SOLVED: To provide a sapphire single crystal that has resistance to a tensile stress, is free of cracks and fractures, and has flexibility, and a production method thereof.SOLUTION: Dies having a slit are arranged in parallel to their width direction in a crucible. An aluminum oxide raw material is loaded in the crucible, heated and melted to prepare aluminum oxide melt. A puddle of the aluminum oxide melt is formed at an upper part of the slit therethrough. A seed crystal is brought into contact with the aluminum oxide melt on the upper part of the slit, and drawn up to grow a sapphire single crystal ribbon of an As-grown single crystal having a specified principal plane and a dimension in the longitudinal direction as well as flexibility. The grown and formed sapphire single crystal ribbon has no microcrack on the surface.SELECTED DRAWING: Figure 1
【課題】引っ張り応力に対し耐性を有し、割れや破壊が防止されて、可撓性を備えるサファイア単結晶リボンとその製造方法を提供する。【解決手段】スリットを有すると共に、幅方向が平行に配置されたダイを坩堝に収容し、坩堝に酸化アルミニウム原料を投入して加熱し、酸化アルミニウム原料を坩堝内で溶融して酸化アルミニウム融液を用意し、スリットを介してスリット上部に酸化アルミニウム融液溜まりを形成し、そのスリット上部の酸化アルミニウム融液に種結晶を接触させて種結晶を引き上げることで、所望の主面と長手方向の寸法を有し、可撓性を有するAs-grown単結晶のサファイア単結晶リボンを成長させる。成長形成されたサファイア単結晶リボンの表面上にはマイクロクラックを有さないものとする。【選択図】図１ |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2017024955A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2017024955A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2017024955A3</originalsourceid><addsrcrecordid>eNrjZLANdgwI8PAMclUI9vRz93FVcA6KDA5x9FEI8nRy8vfTUXD0c1EICPJ3CXUO8fT3U_B1DfHwd1EI8XANcvV342FgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaG5gZGJpampo7GRCkCAIOPKk4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SAPPHIRE SINGLE CRYSTAL RIBBON, AND PRODUCTION METHOD THEREOF</title><source>esp@cenet</source><creator>TAKAHASHI MASAYUKI ; FURUTAKI TOSHIRO ; SATO TSUGIO</creator><creatorcontrib>TAKAHASHI MASAYUKI ; FURUTAKI TOSHIRO ; SATO TSUGIO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a sapphire single crystal that has resistance to a tensile stress, is free of cracks and fractures, and has flexibility, and a production method thereof.SOLUTION: Dies having a slit are arranged in parallel to their width direction in a crucible. An aluminum oxide raw material is loaded in the crucible, heated and melted to prepare aluminum oxide melt. A puddle of the aluminum oxide melt is formed at an upper part of the slit therethrough. A seed crystal is brought into contact with the aluminum oxide melt on the upper part of the slit, and drawn up to grow a sapphire single crystal ribbon of an As-grown single crystal having a specified principal plane and a dimension in the longitudinal direction as well as flexibility. The grown and formed sapphire single crystal ribbon has no microcrack on the surface.SELECTED DRAWING: Figure 1
【課題】引っ張り応力に対し耐性を有し、割れや破壊が防止されて、可撓性を備えるサファイア単結晶リボンとその製造方法を提供する。【解決手段】スリットを有すると共に、幅方向が平行に配置されたダイを坩堝に収容し、坩堝に酸化アルミニウム原料を投入して加熱し、酸化アルミニウム原料を坩堝内で溶融して酸化アルミニウム融液を用意し、スリットを介してスリット上部に酸化アルミニウム融液溜まりを形成し、そのスリット上部の酸化アルミニウム融液に種結晶を接触させて種結晶を引き上げることで、所望の主面と長手方向の寸法を有し、可撓性を有するAs-grown単結晶のサファイア単結晶リボンを成長させる。成長形成されたサファイア単結晶リボンの表面上にはマイクロクラックを有さないものとする。【選択図】図１</description><language>eng ; jpn</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170202&DB=EPODOC&CC=JP&NR=2017024955A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170202&DB=EPODOC&CC=JP&NR=2017024955A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKAHASHI MASAYUKI</creatorcontrib><creatorcontrib>FURUTAKI TOSHIRO</creatorcontrib><creatorcontrib>SATO TSUGIO</creatorcontrib><title>SAPPHIRE SINGLE CRYSTAL RIBBON, AND PRODUCTION METHOD THEREOF</title><description>PROBLEM TO BE SOLVED: To provide a sapphire single crystal that has resistance to a tensile stress, is free of cracks and fractures, and has flexibility, and a production method thereof.SOLUTION: Dies having a slit are arranged in parallel to their width direction in a crucible. An aluminum oxide raw material is loaded in the crucible, heated and melted to prepare aluminum oxide melt. A puddle of the aluminum oxide melt is formed at an upper part of the slit therethrough. A seed crystal is brought into contact with the aluminum oxide melt on the upper part of the slit, and drawn up to grow a sapphire single crystal ribbon of an As-grown single crystal having a specified principal plane and a dimension in the longitudinal direction as well as flexibility. The grown and formed sapphire single crystal ribbon has no microcrack on the surface.SELECTED DRAWING: Figure 1
【課題】引っ張り応力に対し耐性を有し、割れや破壊が防止されて、可撓性を備えるサファイア単結晶リボンとその製造方法を提供する。【解決手段】スリットを有すると共に、幅方向が平行に配置されたダイを坩堝に収容し、坩堝に酸化アルミニウム原料を投入して加熱し、酸化アルミニウム原料を坩堝内で溶融して酸化アルミニウム融液を用意し、スリットを介してスリット上部に酸化アルミニウム融液溜まりを形成し、そのスリット上部の酸化アルミニウム融液に種結晶を接触させて種結晶を引き上げることで、所望の主面と長手方向の寸法を有し、可撓性を有するAs-grown単結晶のサファイア単結晶リボンを成長させる。成長形成されたサファイア単結晶リボンの表面上にはマイクロクラックを有さないものとする。【選択図】図１</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLANdgwI8PAMclUI9vRz93FVcA6KDA5x9FEI8nRy8vfTUXD0c1EICPJ3CXUO8fT3U_B1DfHwd1EI8XANcvV342FgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaG5gZGJpampo7GRCkCAIOPKk4</recordid><startdate>20170202</startdate><enddate>20170202</enddate><creator>TAKAHASHI MASAYUKI</creator><creator>FURUTAKI TOSHIRO</creator><creator>SATO TSUGIO</creator><scope>EVB</scope></search><sort><creationdate>20170202</creationdate><title>SAPPHIRE SINGLE CRYSTAL RIBBON, AND PRODUCTION METHOD THEREOF</title><author>TAKAHASHI MASAYUKI ; FURUTAKI TOSHIRO ; SATO TSUGIO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2017024955A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2017</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKAHASHI MASAYUKI</creatorcontrib><creatorcontrib>FURUTAKI TOSHIRO</creatorcontrib><creatorcontrib>SATO TSUGIO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKAHASHI MASAYUKI</au><au>FURUTAKI TOSHIRO</au><au>SATO TSUGIO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SAPPHIRE SINGLE CRYSTAL RIBBON, AND PRODUCTION METHOD THEREOF</title><date>2017-02-02</date><risdate>2017</risdate><abstract>PROBLEM TO BE SOLVED: To provide a sapphire single crystal that has resistance to a tensile stress, is free of cracks and fractures, and has flexibility, and a production method thereof.SOLUTION: Dies having a slit are arranged in parallel to their width direction in a crucible. An aluminum oxide raw material is loaded in the crucible, heated and melted to prepare aluminum oxide melt. A puddle of the aluminum oxide melt is formed at an upper part of the slit therethrough. A seed crystal is brought into contact with the aluminum oxide melt on the upper part of the slit, and drawn up to grow a sapphire single crystal ribbon of an As-grown single crystal having a specified principal plane and a dimension in the longitudinal direction as well as flexibility. The grown and formed sapphire single crystal ribbon has no microcrack on the surface.SELECTED DRAWING: Figure 1
【課題】引っ張り応力に対し耐性を有し、割れや破壊が防止されて、可撓性を備えるサファイア単結晶リボンとその製造方法を提供する。【解決手段】スリットを有すると共に、幅方向が平行に配置されたダイを坩堝に収容し、坩堝に酸化アルミニウム原料を投入して加熱し、酸化アルミニウム原料を坩堝内で溶融して酸化アルミニウム融液を用意し、スリットを介してスリット上部に酸化アルミニウム融液溜まりを形成し、そのスリット上部の酸化アルミニウム融液に種結晶を接触させて種結晶を引き上げることで、所望の主面と長手方向の寸法を有し、可撓性を有するAs-grown単結晶のサファイア単結晶リボンを成長させる。成長形成されたサファイア単結晶リボンの表面上にはマイクロクラックを有さないものとする。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; jpn |
| recordid | cdi_epo_espacenet_JP2017024955A |
| source | esp@cenet |
| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | SAPPHIRE SINGLE CRYSTAL RIBBON, AND PRODUCTION METHOD THEREOF |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T09%3A22%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TAKAHASHI%20MASAYUKI&rft.date=2017-02-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2017024955A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |