NON-VOLATILE MEMORY WITH ADJUSTABLE CELL BIT SHAPE
PROBLEM TO BE SOLVED: To provide non-volatile memory with an adjustable cell bit shape.SOLUTION: Embodiments of the present disclosure generally relate to non-volatile memory and, in particular, non-volatile memory with adjustable cell bit shapes. In one embodiment, an adjustable memory cell is prov...
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| creator | RUBIN KURT A LUIZ M FRANCA-NETO |
| description | PROBLEM TO BE SOLVED: To provide non-volatile memory with an adjustable cell bit shape.SOLUTION: Embodiments of the present disclosure generally relate to non-volatile memory and, in particular, non-volatile memory with adjustable cell bit shapes. In one embodiment, an adjustable memory cell is provided. The memory cell generally includes a gate electrode, at least one recording layer and a channel layer. The channel layer generally is capable of supporting a depletion region and is disposed between the gate electrode and the at least one recording layer. In this embodiment, upon activating the gate, the channel layer may be depleted and current initially flowing through the channel may be steered through the at least one recording layer.SELECTED DRAWING: None
【課題】 調整可能なセルビット形状を有する不揮発性メモリを提供する。【解決手段】 本発明の実施形態は、一般に、不揮発性メモリに関し、特に、調整可能なセルビット形状を有する不揮発性メモリに関する。一実施形態において、調整可能なメモリセルが提供される。メモリセルは、概して、ゲート電極、少なくとも１つの記録層、及びチャネル層を含む。チャネル層は、概して、空乏領域を支持することができ、ゲート電極と少なくとも１つの記録層との間に配設される。この実施形態において、ゲートを作動させると、チャネル層は欠乏されてもよく、チャネルを通って最初に流れる電流は、少なくとも１つの記録層を通って向けられてもよい。【選択図】なし |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2017017322A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2017017322A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2017017322A3</originalsourceid><addsrcrecordid>eNrjZDDy8_fTDfP3cQzx9HFV8HX19Q-KVAj3DPFQcHTxCg0OcXQCCju7-vgoOHmGKAR7OAa48jCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwNDcyAyNjJyNCZKEQC-QScb</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>NON-VOLATILE MEMORY WITH ADJUSTABLE CELL BIT SHAPE</title><source>esp@cenet</source><creator>RUBIN KURT A ; LUIZ M FRANCA-NETO</creator><creatorcontrib>RUBIN KURT A ; LUIZ M FRANCA-NETO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide non-volatile memory with an adjustable cell bit shape.SOLUTION: Embodiments of the present disclosure generally relate to non-volatile memory and, in particular, non-volatile memory with adjustable cell bit shapes. In one embodiment, an adjustable memory cell is provided. The memory cell generally includes a gate electrode, at least one recording layer and a channel layer. The channel layer generally is capable of supporting a depletion region and is disposed between the gate electrode and the at least one recording layer. In this embodiment, upon activating the gate, the channel layer may be depleted and current initially flowing through the channel may be steered through the at least one recording layer.SELECTED DRAWING: None
【課題】 調整可能なセルビット形状を有する不揮発性メモリを提供する。【解決手段】 本発明の実施形態は、一般に、不揮発性メモリに関し、特に、調整可能なセルビット形状を有する不揮発性メモリに関する。一実施形態において、調整可能なメモリセルが提供される。メモリセルは、概して、ゲート電極、少なくとも１つの記録層、及びチャネル層を含む。チャネル層は、概して、空乏領域を支持することができ、ゲート電極と少なくとも１つの記録層との間に配設される。この実施形態において、ゲートを作動させると、チャネル層は欠乏されてもよく、チャネルを通って最初に流れる電流は、少なくとも１つの記録層を通って向けられてもよい。【選択図】なし</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170119&DB=EPODOC&CC=JP&NR=2017017322A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170119&DB=EPODOC&CC=JP&NR=2017017322A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RUBIN KURT A</creatorcontrib><creatorcontrib>LUIZ M FRANCA-NETO</creatorcontrib><title>NON-VOLATILE MEMORY WITH ADJUSTABLE CELL BIT SHAPE</title><description>PROBLEM TO BE SOLVED: To provide non-volatile memory with an adjustable cell bit shape.SOLUTION: Embodiments of the present disclosure generally relate to non-volatile memory and, in particular, non-volatile memory with adjustable cell bit shapes. In one embodiment, an adjustable memory cell is provided. The memory cell generally includes a gate electrode, at least one recording layer and a channel layer. The channel layer generally is capable of supporting a depletion region and is disposed between the gate electrode and the at least one recording layer. In this embodiment, upon activating the gate, the channel layer may be depleted and current initially flowing through the channel may be steered through the at least one recording layer.SELECTED DRAWING: None
【課題】 調整可能なセルビット形状を有する不揮発性メモリを提供する。【解決手段】 本発明の実施形態は、一般に、不揮発性メモリに関し、特に、調整可能なセルビット形状を有する不揮発性メモリに関する。一実施形態において、調整可能なメモリセルが提供される。メモリセルは、概して、ゲート電極、少なくとも１つの記録層、及びチャネル層を含む。チャネル層は、概して、空乏領域を支持することができ、ゲート電極と少なくとも１つの記録層との間に配設される。この実施形態において、ゲートを作動させると、チャネル層は欠乏されてもよく、チャネルを通って最初に流れる電流は、少なくとも１つの記録層を通って向けられてもよい。【選択図】なし</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDy8_fTDfP3cQzx9HFV8HX19Q-KVAj3DPFQcHTxCg0OcXQCCju7-vgoOHmGKAR7OAa48jCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwNDcyAyNjJyNCZKEQC-QScb</recordid><startdate>20170119</startdate><enddate>20170119</enddate><creator>RUBIN KURT A</creator><creator>LUIZ M FRANCA-NETO</creator><scope>EVB</scope></search><sort><creationdate>20170119</creationdate><title>NON-VOLATILE MEMORY WITH ADJUSTABLE CELL BIT SHAPE</title><author>RUBIN KURT A ; LUIZ M FRANCA-NETO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2017017322A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>RUBIN KURT A</creatorcontrib><creatorcontrib>LUIZ M FRANCA-NETO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RUBIN KURT A</au><au>LUIZ M FRANCA-NETO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>NON-VOLATILE MEMORY WITH ADJUSTABLE CELL BIT SHAPE</title><date>2017-01-19</date><risdate>2017</risdate><abstract>PROBLEM TO BE SOLVED: To provide non-volatile memory with an adjustable cell bit shape.SOLUTION: Embodiments of the present disclosure generally relate to non-volatile memory and, in particular, non-volatile memory with adjustable cell bit shapes. In one embodiment, an adjustable memory cell is provided. The memory cell generally includes a gate electrode, at least one recording layer and a channel layer. The channel layer generally is capable of supporting a depletion region and is disposed between the gate electrode and the at least one recording layer. In this embodiment, upon activating the gate, the channel layer may be depleted and current initially flowing through the channel may be steered through the at least one recording layer.SELECTED DRAWING: None
【課題】 調整可能なセルビット形状を有する不揮発性メモリを提供する。【解決手段】 本発明の実施形態は、一般に、不揮発性メモリに関し、特に、調整可能なセルビット形状を有する不揮発性メモリに関する。一実施形態において、調整可能なメモリセルが提供される。メモリセルは、概して、ゲート電極、少なくとも１つの記録層、及びチャネル層を含む。チャネル層は、概して、空乏領域を支持することができ、ゲート電極と少なくとも１つの記録層との間に配設される。この実施形態において、ゲートを作動させると、チャネル層は欠乏されてもよく、チャネルを通って最初に流れる電流は、少なくとも１つの記録層を通って向けられてもよい。【選択図】なし</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| title | NON-VOLATILE MEMORY WITH ADJUSTABLE CELL BIT SHAPE |
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