PRECURSOR SOLUTION FOR INSULATION FILM FORMATION AND ITS MANUFACTURING METHOD, INSULATION FILM AND ITS MANUFACTURING METHOD, AND TRANSISTOR DEVICE AND ITS MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To provide a solution for insulation film formation, which can be formed at a lower temperature than before, and which is suitably applied to film formation at a high temperature and used in an insulation film for a transistor device, and also to provide a method of manufacturi...
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| creator | SHO BAISHIN SHIMODA TATSUYA LI JIN WANG |
| description | PROBLEM TO BE SOLVED: To provide a solution for insulation film formation, which can be formed at a lower temperature than before, and which is suitably applied to film formation at a high temperature and used in an insulation film for a transistor device, and also to provide a method of manufacturing the solution for insulation film formation, the insulation film obtained from the solution, a method of manufacturing the insulation film, and a thin film transistor manufactured by them.SOLUTION: There is disclosed a precursor solution for insulation film formation, which is an LnZro oxide solution formed by dispersing an Ln compound and a Zn compound into a solvent and in which absorption edge wavelength of a UV ray is 280 nm or more. Shifting of absorption edge wavelength to longer wavelength can be attained by autoclave treatment for heating to 150-230°C while applying pressure to an LnZrO oxide precursor solution formed dispersing the Ln compound and the Zn compound into the solvent.SELECTED DRAWING: Figure 1
【課題】本発明の課題は、従来より低温形成が可能であって、高温製膜にも適用し、トランジスタデバイス用の絶縁膜に用いて好適な絶縁膜形成用溶液とその製造方法、その溶液から得られた絶縁膜とその製造方法並びにそれらによる薄膜トランジスタの提供にある。【解決手段】本発明は、Ｌｎ化合物とＺｒ化合物を溶媒に分散させたＬｎＺｒＯ酸化物溶液であり、紫外線の吸収端波長が２８０ｎｍ以上であることを特徴とする絶縁膜形成用前駆体溶液に関する。吸収端波長の長波長シフトは、Ｌｎ化合物とＺｒ化合物を溶媒に分散させたＬｎＺｒＯ酸化物前駆体溶液を加圧しながら１５０〜２３０℃に加熱するオートクレーブ処理により達成される。【選択図】図１ |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2016197631A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2016197631A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2016197631A3</originalsourceid><addsrcrecordid>eNrjZFgfEOTqHBoU7B-kEOzvExri6e-n4AbkePoFh_o4QriePr4gMV8I19HPRcEzJFjB19Ev1M3ROSQ0yNPPXcHXNcTD30UHQx9-1SDZkCBHv2DP4BCgpS6uYZ7Ornj18DCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwNDM0NLczNjQ0djohQBAKw1SgI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PRECURSOR SOLUTION FOR INSULATION FILM FORMATION AND ITS MANUFACTURING METHOD, INSULATION FILM AND ITS MANUFACTURING METHOD, AND TRANSISTOR DEVICE AND ITS MANUFACTURING METHOD</title><source>esp@cenet</source><creator>SHO BAISHIN ; SHIMODA TATSUYA ; LI JIN WANG</creator><creatorcontrib>SHO BAISHIN ; SHIMODA TATSUYA ; LI JIN WANG</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a solution for insulation film formation, which can be formed at a lower temperature than before, and which is suitably applied to film formation at a high temperature and used in an insulation film for a transistor device, and also to provide a method of manufacturing the solution for insulation film formation, the insulation film obtained from the solution, a method of manufacturing the insulation film, and a thin film transistor manufactured by them.SOLUTION: There is disclosed a precursor solution for insulation film formation, which is an LnZro oxide solution formed by dispersing an Ln compound and a Zn compound into a solvent and in which absorption edge wavelength of a UV ray is 280 nm or more. Shifting of absorption edge wavelength to longer wavelength can be attained by autoclave treatment for heating to 150-230°C while applying pressure to an LnZrO oxide precursor solution formed dispersing the Ln compound and the Zn compound into the solvent.SELECTED DRAWING: Figure 1
【課題】本発明の課題は、従来より低温形成が可能であって、高温製膜にも適用し、トランジスタデバイス用の絶縁膜に用いて好適な絶縁膜形成用溶液とその製造方法、その溶液から得られた絶縁膜とその製造方法並びにそれらによる薄膜トランジスタの提供にある。【解決手段】本発明は、Ｌｎ化合物とＺｒ化合物を溶媒に分散させたＬｎＺｒＯ酸化物溶液であり、紫外線の吸収端波長が２８０ｎｍ以上であることを特徴とする絶縁膜形成用前駆体溶液に関する。吸収端波長の長波長シフトは、Ｌｎ化合物とＺｒ化合物を溶媒に分散させたＬｎＺｒＯ酸化物前駆体溶液を加圧しながら１５０〜２３０℃に加熱するオートクレーブ処理により達成される。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161124&DB=EPODOC&CC=JP&NR=2016197631A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161124&DB=EPODOC&CC=JP&NR=2016197631A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHO BAISHIN</creatorcontrib><creatorcontrib>SHIMODA TATSUYA</creatorcontrib><creatorcontrib>LI JIN WANG</creatorcontrib><title>PRECURSOR SOLUTION FOR INSULATION FILM FORMATION AND ITS MANUFACTURING METHOD, INSULATION FILM AND ITS MANUFACTURING METHOD, AND TRANSISTOR DEVICE AND ITS MANUFACTURING METHOD</title><description>PROBLEM TO BE SOLVED: To provide a solution for insulation film formation, which can be formed at a lower temperature than before, and which is suitably applied to film formation at a high temperature and used in an insulation film for a transistor device, and also to provide a method of manufacturing the solution for insulation film formation, the insulation film obtained from the solution, a method of manufacturing the insulation film, and a thin film transistor manufactured by them.SOLUTION: There is disclosed a precursor solution for insulation film formation, which is an LnZro oxide solution formed by dispersing an Ln compound and a Zn compound into a solvent and in which absorption edge wavelength of a UV ray is 280 nm or more. Shifting of absorption edge wavelength to longer wavelength can be attained by autoclave treatment for heating to 150-230°C while applying pressure to an LnZrO oxide precursor solution formed dispersing the Ln compound and the Zn compound into the solvent.SELECTED DRAWING: Figure 1
【課題】本発明の課題は、従来より低温形成が可能であって、高温製膜にも適用し、トランジスタデバイス用の絶縁膜に用いて好適な絶縁膜形成用溶液とその製造方法、その溶液から得られた絶縁膜とその製造方法並びにそれらによる薄膜トランジスタの提供にある。【解決手段】本発明は、Ｌｎ化合物とＺｒ化合物を溶媒に分散させたＬｎＺｒＯ酸化物溶液であり、紫外線の吸収端波長が２８０ｎｍ以上であることを特徴とする絶縁膜形成用前駆体溶液に関する。吸収端波長の長波長シフトは、Ｌｎ化合物とＺｒ化合物を溶媒に分散させたＬｎＺｒＯ酸化物前駆体溶液を加圧しながら１５０〜２３０℃に加熱するオートクレーブ処理により達成される。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFgfEOTqHBoU7B-kEOzvExri6e-n4AbkePoFh_o4QriePr4gMV8I19HPRcEzJFjB19Ev1M3ROSQ0yNPPXcHXNcTD30UHQx9-1SDZkCBHv2DP4BCgpS6uYZ7Ornj18DCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwNDM0NLczNjQ0djohQBAKw1SgI</recordid><startdate>20161124</startdate><enddate>20161124</enddate><creator>SHO BAISHIN</creator><creator>SHIMODA TATSUYA</creator><creator>LI JIN WANG</creator><scope>EVB</scope></search><sort><creationdate>20161124</creationdate><title>PRECURSOR SOLUTION FOR INSULATION FILM FORMATION AND ITS MANUFACTURING METHOD, INSULATION FILM AND ITS MANUFACTURING METHOD, AND TRANSISTOR DEVICE AND ITS MANUFACTURING METHOD</title><author>SHO BAISHIN ; SHIMODA TATSUYA ; LI JIN WANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2016197631A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SHO BAISHIN</creatorcontrib><creatorcontrib>SHIMODA TATSUYA</creatorcontrib><creatorcontrib>LI JIN WANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHO BAISHIN</au><au>SHIMODA TATSUYA</au><au>LI JIN WANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRECURSOR SOLUTION FOR INSULATION FILM FORMATION AND ITS MANUFACTURING METHOD, INSULATION FILM AND ITS MANUFACTURING METHOD, AND TRANSISTOR DEVICE AND ITS MANUFACTURING METHOD</title><date>2016-11-24</date><risdate>2016</risdate><abstract>PROBLEM TO BE SOLVED: To provide a solution for insulation film formation, which can be formed at a lower temperature than before, and which is suitably applied to film formation at a high temperature and used in an insulation film for a transistor device, and also to provide a method of manufacturing the solution for insulation film formation, the insulation film obtained from the solution, a method of manufacturing the insulation film, and a thin film transistor manufactured by them.SOLUTION: There is disclosed a precursor solution for insulation film formation, which is an LnZro oxide solution formed by dispersing an Ln compound and a Zn compound into a solvent and in which absorption edge wavelength of a UV ray is 280 nm or more. Shifting of absorption edge wavelength to longer wavelength can be attained by autoclave treatment for heating to 150-230°C while applying pressure to an LnZrO oxide precursor solution formed dispersing the Ln compound and the Zn compound into the solvent.SELECTED DRAWING: Figure 1
【課題】本発明の課題は、従来より低温形成が可能であって、高温製膜にも適用し、トランジスタデバイス用の絶縁膜に用いて好適な絶縁膜形成用溶液とその製造方法、その溶液から得られた絶縁膜とその製造方法並びにそれらによる薄膜トランジスタの提供にある。【解決手段】本発明は、Ｌｎ化合物とＺｒ化合物を溶媒に分散させたＬｎＺｒＯ酸化物溶液であり、紫外線の吸収端波長が２８０ｎｍ以上であることを特徴とする絶縁膜形成用前駆体溶液に関する。吸収端波長の長波長シフトは、Ｌｎ化合物とＺｒ化合物を溶媒に分散させたＬｎＺｒＯ酸化物前駆体溶液を加圧しながら１５０〜２３０℃に加熱するオートクレーブ処理により達成される。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| title | PRECURSOR SOLUTION FOR INSULATION FILM FORMATION AND ITS MANUFACTURING METHOD, INSULATION FILM AND ITS MANUFACTURING METHOD, AND TRANSISTOR DEVICE AND ITS MANUFACTURING METHOD |
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