FLOW RATE CONTROL METHOD AND SUBSTRATE PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To provide a control method for reducing the consumption of a fluid for adjustment and the use force cost, while maintaining the quality of the process liquid supplied to a substrate, and to provide a substrate processing apparatus.SOLUTION: With regard to a process liquid pipe...

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description PROBLEM TO BE SOLVED: To provide a control method for reducing the consumption of a fluid for adjustment and the use force cost, while maintaining the quality of the process liquid supplied to a substrate, and to provide a substrate processing apparatus.SOLUTION: With regard to a process liquid pipeline having a double pipeline of an inner tube and an outer tube, when the total value of flow rate of the process liquid distributed in the inner tube of the process liquid pipeline in a predetermined first judgement time is less than a first threshold, the flow rate of a fluid for adjustment distributed in the outer tube is set to a first flow rate, and when the total value of flow rate of the process liquid distributed in the inner tube in a first judgement time exceeds the first threshold, the flow rate of the fluid for adjustment distributed in the outer tube is set to a second flow rate smaller than the first flow rate.SELECTED DRAWING: Figure 4 【課題】基板に供給する処理液の品質を維持しつつ、調整用流体の消費量及び用力コストを削減する制御方法及び基板処理装置を提供することである。【解決手段】内管と外管の二重配管を有する処理液配管について、所定の第1判断時間内に処理液配管の内管の内部を流通する前記処理液の流量の合計値が第1閾値未満の場合は、外管の内部を流通する前記調整用流体の流量を第1流量とし、第1判断時間内に内管の内部を流通する処理液の流量の合計値が第1閾値を超える場合は、外管の内部を流通する前記調整用流体の流量を、第1流量よりも少ない第2流量とする。【選択図】 図4
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title FLOW RATE CONTROL METHOD AND SUBSTRATE PROCESSING APPARATUS
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