MANUFACTURING METHOD OF SILICON SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon single crystal capable of efficiently suppressing generation of pinholes in a single crystal.SOLUTION: A manufacturing method of a silicon single crystal in which a silicon single crystal is drawn up from a silicon melt 3 in a quar...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	KIN DAIKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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