PHOTOELECTRIC CONVERSION DEVICE

PHOTOELECTRIC CONVERSION DEVICE

PROBLEM TO BE SOLVED: To reduce the recombination of carriers generated by photoelectric conversion, thereby improving photoelectric conversion efficiency of a photoelectric conversion device.SOLUTION: A photoelectric conversion device 11 includes: a lower electrode layer 2; a molybdenum oxide layer...

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1. Verfasser: UMESATO KAZUMASA
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Sprache:eng ; jpn
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description PROBLEM TO BE SOLVED: To reduce the recombination of carriers generated by photoelectric conversion, thereby improving photoelectric conversion efficiency of a photoelectric conversion device.SOLUTION: A photoelectric conversion device 11 includes: a lower electrode layer 2; a molybdenum oxide layer 6 provided to partially cover the upper surface of the lower electrode layer 2; a light absorption layer 3 provided on the lower electrode layer 2 and the molybdenum oxide layer 6; a buffer layer 4 provided on the light absorption layer 3; and an upper electrode layer 5 provided on the upper surface of the buffer layer 4.SELECTED DRAWING: Figure 2 【課題】 光電変換によって生じたキャリアの再結合を低減し、光電変換装置の光電変換効率を向上させることにある。【解決手段】 光電変換装置１１は、下部電極層２と、下部電極層２の上面を部分的に覆うように設けられた酸化モリブデン層６と、下部電極層２および酸化モリブデン層６上に設けられた光吸収層３と、光吸収層３上に設けられたバッファ層４と、バッファ層４の上面に設けられた上部電極層５とを具備する。【選択図】 図２
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a molybdenum oxide layer 6 provided to partially cover the upper surface of the lower electrode layer 2; a light absorption layer 3 provided on the lower electrode layer 2 and the molybdenum oxide layer 6; a buffer layer 4 provided on the light absorption layer 3; and an upper electrode layer 5 provided on the upper surface of the buffer layer 4.SELECTED DRAWING: Figure 2 【課題】 光電変換によって生じたキャリアの再結合を低減し、光電変換装置の光電変換効率を向上させることにある。【解決手段】 光電変換装置１１は、下部電極層２と、下部電極層２の上面を部分的に覆うように設けられた酸化モリブデン層６と、下部電極層２および酸化モリブデン層６上に設けられた光吸収層３と、光吸収層３上に設けられたバッファ層４と、バッファ層４の上面に設けられた上部電極層５とを具備する。【選択図】 図２</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160923&amp;DB=EPODOC&amp;CC=JP&amp;NR=2016171186A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160923&amp;DB=EPODOC&amp;CC=JP&amp;NR=2016171186A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>UMESATO KAZUMASA</creatorcontrib><title>PHOTOELECTRIC CONVERSION DEVICE</title><description>PROBLEM TO BE SOLVED: To reduce the recombination of carriers generated by photoelectric conversion, thereby improving photoelectric conversion efficiency of a photoelectric conversion device.SOLUTION: A photoelectric conversion device 11 includes: a lower electrode layer 2; a molybdenum oxide layer 6 provided to partially cover the upper surface of the lower electrode layer 2; a light absorption layer 3 provided on the lower electrode layer 2 and the molybdenum oxide layer 6; a buffer layer 4 provided on the light absorption layer 3; and an upper electrode layer 5 provided on the upper surface of the buffer layer 4.SELECTED DRAWING: Figure 2 【課題】 光電変換によって生じたキャリアの再結合を低減し、光電変換装置の光電変換効率を向上させることにある。【解決手段】 光電変換装置１１は、下部電極層２と、下部電極層２の上面を部分的に覆うように設けられた酸化モリブデン層６と、下部電極層２および酸化モリブデン層６上に設けられた光吸収層３と、光吸収層３上に設けられたバッファ層４と、バッファ層４の上面に設けられた上部電極層５とを具備する。【選択図】 図２</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAP8PAP8Xf1cXUOCfJ0VnD29wtzDQr29PdTcHEN83R25WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaGZobmhoYWZo7GRCkCAC5AIkc</recordid><startdate>20160923</startdate><enddate>20160923</enddate><creator>UMESATO KAZUMASA</creator><scope>EVB</scope></search><sort><creationdate>20160923</creationdate><title>PHOTOELECTRIC CONVERSION DEVICE</title><author>UMESATO KAZUMASA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2016171186A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>UMESATO KAZUMASA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>UMESATO KAZUMASA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PHOTOELECTRIC CONVERSION DEVICE</title><date>2016-09-23</date><risdate>2016</risdate><abstract>PROBLEM TO BE SOLVED: To reduce the recombination of carriers generated by photoelectric conversion, thereby improving photoelectric conversion efficiency of a photoelectric conversion device.SOLUTION: A photoelectric conversion device 11 includes: a lower electrode layer 2; a molybdenum oxide layer 6 provided to partially cover the upper surface of the lower electrode layer 2; a light absorption layer 3 provided on the lower electrode layer 2 and the molybdenum oxide layer 6; a buffer layer 4 provided on the light absorption layer 3; and an upper electrode layer 5 provided on the upper surface of the buffer layer 4.SELECTED DRAWING: Figure 2 【課題】 光電変換によって生じたキャリアの再結合を低減し、光電変換装置の光電変換効率を向上させることにある。【解決手段】 光電変換装置１１は、下部電極層２と、下部電極層２の上面を部分的に覆うように設けられた酸化モリブデン層６と、下部電極層２および酸化モリブデン層６上に設けられた光吸収層３と、光吸収層３上に設けられたバッファ層４と、バッファ層４の上面に設けられた上部電極層５とを具備する。【選択図】 図２</abstract><oa>free_for_read</oa></addata></record>
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ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PHOTOELECTRIC CONVERSION DEVICE
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