MANUFACTURING METHOD OF SOLAR CELL
PROBLEM TO BE SOLVED: To provide a novel solar cell and a manufacturing method thereof.SOLUTION: The present invention relates to a solar cell that comprises: a semiconductor substrate 110 that has a front surface 110a and a back surface 110b which are oppositely arranged; boron back surface field l...
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| creator | HAYASHI NOBUNARI OU NAI-TIEN WU HSING-HUA WU CHUNG-HAN KO KEIBU CHEN KUEI-PO |
| description | PROBLEM TO BE SOLVED: To provide a novel solar cell and a manufacturing method thereof.SOLUTION: The present invention relates to a solar cell that comprises: a semiconductor substrate 110 that has a front surface 110a and a back surface 110b which are oppositely arranged; boron back surface field layer 120 that is positioned in the semiconductor substrate 110 at the lower side of the back surface 110b; a passivation layer 130 that is positioned at the upper side of the boron back surface field layer 120 and has an opening 120a penetrating the passivation layer 130 itself; a back electrode layer 140 that is positioned in the opening 120a; and an aluminium local back surface field layer 150 that is positioned in the semiconductor substrate 110 in the lower side of the opening 120a and is contacted with the boron back surface field layer 120 and the back electrode layer 140. The present invention also relates to a manufacturing method of the solar cell.SELECTED DRAWING: Figure 1
【課題】新規の太陽電池及びその製造方法を提供する。【解決手段】本発明は、対向に設置された正面１１０ａ及び裏面１１０ｂを有する半導体基板１１０と、裏面１１０ｂの下方における半導体基板１１０内に位置するホウ素裏面電界層１２０と、ホウ素裏面電界層１２０の上方に位置するとともに、自体を貫通する開口１２０ａを有するパッシベーション層１３０と、開口１２０ａ内に位置する裏面電極層１４０と、開口１２０ａの下方における半導体基板１１０内に位置するとともに、ホウ素裏面電界層１２０及び裏面電極層１４０と接触するアルミニウム局所裏面電界層１５０と、を含む太陽電池及びその製造方法である。【選択図】図１ |
| format | Patent |
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【課題】新規の太陽電池及びその製造方法を提供する。【解決手段】本発明は、対向に設置された正面１１０ａ及び裏面１１０ｂを有する半導体基板１１０と、裏面１１０ｂの下方における半導体基板１１０内に位置するホウ素裏面電界層１２０と、ホウ素裏面電界層１２０の上方に位置するとともに、自体を貫通する開口１２０ａを有するパッシベーション層１３０と、開口１２０ａ内に位置する裏面電極層１４０と、開口１２０ａの下方における半導体基板１１０内に位置するとともに、ホウ素裏面電界層１２０及び裏面電極層１４０と接触するアルミニウム局所裏面電界層１５０と、を含む太陽電池及びその製造方法である。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160519&DB=EPODOC&CC=JP&NR=2016086149A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160519&DB=EPODOC&CC=JP&NR=2016086149A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HAYASHI NOBUNARI</creatorcontrib><creatorcontrib>OU NAI-TIEN</creatorcontrib><creatorcontrib>WU HSING-HUA</creatorcontrib><creatorcontrib>WU CHUNG-HAN</creatorcontrib><creatorcontrib>KO KEIBU</creatorcontrib><creatorcontrib>CHEN KUEI-PO</creatorcontrib><title>MANUFACTURING METHOD OF SOLAR CELL</title><description>PROBLEM TO BE SOLVED: To provide a novel solar cell and a manufacturing method thereof.SOLUTION: The present invention relates to a solar cell that comprises: a semiconductor substrate 110 that has a front surface 110a and a back surface 110b which are oppositely arranged; boron back surface field layer 120 that is positioned in the semiconductor substrate 110 at the lower side of the back surface 110b; a passivation layer 130 that is positioned at the upper side of the boron back surface field layer 120 and has an opening 120a penetrating the passivation layer 130 itself; a back electrode layer 140 that is positioned in the opening 120a; and an aluminium local back surface field layer 150 that is positioned in the semiconductor substrate 110 in the lower side of the opening 120a and is contacted with the boron back surface field layer 120 and the back electrode layer 140. The present invention also relates to a manufacturing method of the solar cell.SELECTED DRAWING: Figure 1
【課題】新規の太陽電池及びその製造方法を提供する。【解決手段】本発明は、対向に設置された正面１１０ａ及び裏面１１０ｂを有する半導体基板１１０と、裏面１１０ｂの下方における半導体基板１１０内に位置するホウ素裏面電界層１２０と、ホウ素裏面電界層１２０の上方に位置するとともに、自体を貫通する開口１２０ａを有するパッシベーション層１３０と、開口１２０ａ内に位置する裏面電極層１４０と、開口１２０ａの下方における半導体基板１１０内に位置するとともに、ホウ素裏面電界層１２０及び裏面電極層１４０と接触するアルミニウム局所裏面電界層１５０と、を含む太陽電池及びその製造方法である。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDydfQLdXN0DgkN8vRzV_B1DfHwd1Hwd1MI9vdxDFJwdvXx4WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaGZgYWZoYmlo7GRCkCAHVdItI</recordid><startdate>20160519</startdate><enddate>20160519</enddate><creator>HAYASHI NOBUNARI</creator><creator>OU NAI-TIEN</creator><creator>WU HSING-HUA</creator><creator>WU CHUNG-HAN</creator><creator>KO KEIBU</creator><creator>CHEN KUEI-PO</creator><scope>EVB</scope></search><sort><creationdate>20160519</creationdate><title>MANUFACTURING METHOD OF SOLAR CELL</title><author>HAYASHI NOBUNARI ; OU NAI-TIEN ; WU HSING-HUA ; WU CHUNG-HAN ; KO KEIBU ; CHEN KUEI-PO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2016086149A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HAYASHI NOBUNARI</creatorcontrib><creatorcontrib>OU NAI-TIEN</creatorcontrib><creatorcontrib>WU HSING-HUA</creatorcontrib><creatorcontrib>WU CHUNG-HAN</creatorcontrib><creatorcontrib>KO KEIBU</creatorcontrib><creatorcontrib>CHEN KUEI-PO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HAYASHI NOBUNARI</au><au>OU NAI-TIEN</au><au>WU HSING-HUA</au><au>WU CHUNG-HAN</au><au>KO KEIBU</au><au>CHEN KUEI-PO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURING METHOD OF SOLAR CELL</title><date>2016-05-19</date><risdate>2016</risdate><abstract>PROBLEM TO BE SOLVED: To provide a novel solar cell and a manufacturing method thereof.SOLUTION: The present invention relates to a solar cell that comprises: a semiconductor substrate 110 that has a front surface 110a and a back surface 110b which are oppositely arranged; boron back surface field layer 120 that is positioned in the semiconductor substrate 110 at the lower side of the back surface 110b; a passivation layer 130 that is positioned at the upper side of the boron back surface field layer 120 and has an opening 120a penetrating the passivation layer 130 itself; a back electrode layer 140 that is positioned in the opening 120a; and an aluminium local back surface field layer 150 that is positioned in the semiconductor substrate 110 in the lower side of the opening 120a and is contacted with the boron back surface field layer 120 and the back electrode layer 140. The present invention also relates to a manufacturing method of the solar cell.SELECTED DRAWING: Figure 1
【課題】新規の太陽電池及びその製造方法を提供する。【解決手段】本発明は、対向に設置された正面１１０ａ及び裏面１１０ｂを有する半導体基板１１０と、裏面１１０ｂの下方における半導体基板１１０内に位置するホウ素裏面電界層１２０と、ホウ素裏面電界層１２０の上方に位置するとともに、自体を貫通する開口１２０ａを有するパッシベーション層１３０と、開口１２０ａ内に位置する裏面電極層１４０と、開口１２０ａの下方における半導体基板１１０内に位置するとともに、ホウ素裏面電界層１２０及び裏面電極層１４０と接触するアルミニウム局所裏面電界層１５０と、を含む太陽電池及びその製造方法である。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| title | MANUFACTURING METHOD OF SOLAR CELL |
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