MANUFACTURING METHOD OF SOLAR CELL

PROBLEM TO BE SOLVED: To provide a novel solar cell and a manufacturing method thereof.SOLUTION: The present invention relates to a solar cell that comprises: a semiconductor substrate 110 that has a front surface 110a and a back surface 110b which are oppositely arranged; boron back surface field l...

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Bibliographische Detailangaben
Hauptverfasser: HAYASHI NOBUNARI, OU NAI-TIEN, WU HSING-HUA, WU CHUNG-HAN, KO KEIBU, CHEN KUEI-PO
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a novel solar cell and a manufacturing method thereof.SOLUTION: The present invention relates to a solar cell that comprises: a semiconductor substrate 110 that has a front surface 110a and a back surface 110b which are oppositely arranged; boron back surface field layer 120 that is positioned in the semiconductor substrate 110 at the lower side of the back surface 110b; a passivation layer 130 that is positioned at the upper side of the boron back surface field layer 120 and has an opening 120a penetrating the passivation layer 130 itself; a back electrode layer 140 that is positioned in the opening 120a; and an aluminium local back surface field layer 150 that is positioned in the semiconductor substrate 110 in the lower side of the opening 120a and is contacted with the boron back surface field layer 120 and the back electrode layer 140. The present invention also relates to a manufacturing method of the solar cell.SELECTED DRAWING: Figure 1 【課題】新規の太陽電池及びその製造方法を提供する。【解決手段】本発明は、対向に設置された正面110a及び裏面110bを有する半導体基板110と、裏面110bの下方における半導体基板110内に位置するホウ素裏面電界層120と、ホウ素裏面電界層120の上方に位置するとともに、自体を貫通する開口120aを有するパッシベーション層130と、開口120a内に位置する裏面電極層140と、開口120aの下方における半導体基板110内に位置するとともに、ホウ素裏面電界層120及び裏面電極層140と接触するアルミニウム局所裏面電界層150と、を含む太陽電池及びその製造方法である。【選択図】図1