EPOXY RESIN MOLDING MATERIAL FOR SEALING AND SEMICONDUCTOR DEVICE USING THE SAME
PROBLEM TO BE SOLVED: To provide an epoxy resin molding material for sealing excellent in fillability and capable of suppressing the generation of voids, and a semiconductor device using the same.SOLUTION: Provided is an epoxy resin molding material for sealing at least containing (A) an epoxy resin...
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| creator | TOGAWA MITSUO ITO TAKAFUMI IKEUCHI TAKATOSHI AKAGI SEIICHI |
| description | PROBLEM TO BE SOLVED: To provide an epoxy resin molding material for sealing excellent in fillability and capable of suppressing the generation of voids, and a semiconductor device using the same.SOLUTION: Provided is an epoxy resin molding material for sealing at least containing (A) an epoxy resin, (B) a curing agent and (C) an inorganic filler, in which the epoxy resin (A) and the curing agent (B), the dynamic contact angle of a liquid composition made of both at 110°C to an insulation protective film is 70 degrees or lower, and, in the inorganic filler (C), the mass average grain size is 10 μm or lower and also the specific surface area is 3.0 m/g or higher.SELECTED DRAWING: Figure 1
【課題】充填性に優れボイド発生を抑制することのできる封止用エポキシ樹脂成形材料、及びそれを用いた半導体装置を提供する。【解決手段】（Ａ）エポキシ樹脂、（Ｂ）硬化剤及び（Ｃ）無機充填剤を少なくとも含み、前記（Ａ）エポキシ樹脂及び前記（Ｂ）硬化剤は、両者からなる液状組成物の１１０℃における絶縁保護膜に対する動的接触角が７０度以下であり、前記（Ｃ）無機充填剤は、質量平均粒子径が１０μｍ以下で且つ比表面積が３．０ｍ２／ｇ以上である、封止用エポキシ樹脂成形材料。【選択図】図１ |
| format | Patent |
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【課題】充填性に優れボイド発生を抑制することのできる封止用エポキシ樹脂成形材料、及びそれを用いた半導体装置を提供する。【解決手段】（Ａ）エポキシ樹脂、（Ｂ）硬化剤及び（Ｃ）無機充填剤を少なくとも含み、前記（Ａ）エポキシ樹脂及び前記（Ｂ）硬化剤は、両者からなる液状組成物の１１０℃における絶縁保護膜に対する動的接触角が７０度以下であり、前記（Ｃ）無機充填剤は、質量平均粒子径が１０μｍ以下で且つ比表面積が３．０ｍ２／ｇ以上である、封止用エポキシ樹脂成形材料。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOSITIONS BASED THEREON ; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS ; METALLURGY ; ORGANIC MACROMOLECULAR COMPOUNDS ; SEMICONDUCTOR DEVICES ; THEIR PREPARATION OR CHEMICAL WORKING-UP ; USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160512&DB=EPODOC&CC=JP&NR=2016074920A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160512&DB=EPODOC&CC=JP&NR=2016074920A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TOGAWA MITSUO</creatorcontrib><creatorcontrib>ITO TAKAFUMI</creatorcontrib><creatorcontrib>IKEUCHI TAKATOSHI</creatorcontrib><creatorcontrib>AKAGI SEIICHI</creatorcontrib><title>EPOXY RESIN MOLDING MATERIAL FOR SEALING AND SEMICONDUCTOR DEVICE USING THE SAME</title><description>PROBLEM TO BE SOLVED: To provide an epoxy resin molding material for sealing excellent in fillability and capable of suppressing the generation of voids, and a semiconductor device using the same.SOLUTION: Provided is an epoxy resin molding material for sealing at least containing (A) an epoxy resin, (B) a curing agent and (C) an inorganic filler, in which the epoxy resin (A) and the curing agent (B), the dynamic contact angle of a liquid composition made of both at 110°C to an insulation protective film is 70 degrees or lower, and, in the inorganic filler (C), the mass average grain size is 10 μm or lower and also the specific surface area is 3.0 m/g or higher.SELECTED DRAWING: Figure 1
【課題】充填性に優れボイド発生を抑制することのできる封止用エポキシ樹脂成形材料、及びそれを用いた半導体装置を提供する。【解決手段】（Ａ）エポキシ樹脂、（Ｂ）硬化剤及び（Ｃ）無機充填剤を少なくとも含み、前記（Ａ）エポキシ樹脂及び前記（Ｂ）硬化剤は、両者からなる液状組成物の１１０℃における絶縁保護膜に対する動的接触角が７０度以下であり、前記（Ｃ）無機充填剤は、質量平均粒子径が１０μｍ以下で且つ比表面積が３．０ｍ２／ｇ以上である、封止用エポキシ樹脂成形材料。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>COMPOSITIONS OF MACROMOLECULAR COMPOUNDS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</subject><subject>METALLURGY</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><subject>USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAhwDfCPiFQIcg329FPw9fdx8fRzV_B1DHEN8nT0UXDzD1IIdnX0AQk6-rkA2b6ezv5-LqHOIUAZF9cwT2dXhdBgkHSIh6tCsKOvKw8Da1piTnEqL5TmZlBycw1x9tBNLciPTy0uSExOzUstifcKMDIwNDMwN7E0MnA0JkoRAMIvL1E</recordid><startdate>20160512</startdate><enddate>20160512</enddate><creator>TOGAWA MITSUO</creator><creator>ITO TAKAFUMI</creator><creator>IKEUCHI TAKATOSHI</creator><creator>AKAGI SEIICHI</creator><scope>EVB</scope></search><sort><creationdate>20160512</creationdate><title>EPOXY RESIN MOLDING MATERIAL FOR SEALING AND SEMICONDUCTOR DEVICE USING THE SAME</title><author>TOGAWA MITSUO ; ITO TAKAFUMI ; IKEUCHI TAKATOSHI ; AKAGI SEIICHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2016074920A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>COMPOSITIONS OF MACROMOLECULAR COMPOUNDS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</topic><topic>METALLURGY</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><topic>USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS</topic><toplevel>online_resources</toplevel><creatorcontrib>TOGAWA MITSUO</creatorcontrib><creatorcontrib>ITO TAKAFUMI</creatorcontrib><creatorcontrib>IKEUCHI TAKATOSHI</creatorcontrib><creatorcontrib>AKAGI SEIICHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TOGAWA MITSUO</au><au>ITO TAKAFUMI</au><au>IKEUCHI TAKATOSHI</au><au>AKAGI SEIICHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>EPOXY RESIN MOLDING MATERIAL FOR SEALING AND SEMICONDUCTOR DEVICE USING THE SAME</title><date>2016-05-12</date><risdate>2016</risdate><abstract>PROBLEM TO BE SOLVED: To provide an epoxy resin molding material for sealing excellent in fillability and capable of suppressing the generation of voids, and a semiconductor device using the same.SOLUTION: Provided is an epoxy resin molding material for sealing at least containing (A) an epoxy resin, (B) a curing agent and (C) an inorganic filler, in which the epoxy resin (A) and the curing agent (B), the dynamic contact angle of a liquid composition made of both at 110°C to an insulation protective film is 70 degrees or lower, and, in the inorganic filler (C), the mass average grain size is 10 μm or lower and also the specific surface area is 3.0 m/g or higher.SELECTED DRAWING: Figure 1
【課題】充填性に優れボイド発生を抑制することのできる封止用エポキシ樹脂成形材料、及びそれを用いた半導体装置を提供する。【解決手段】（Ａ）エポキシ樹脂、（Ｂ）硬化剤及び（Ｃ）無機充填剤を少なくとも含み、前記（Ａ）エポキシ樹脂及び前記（Ｂ）硬化剤は、両者からなる液状組成物の１１０℃における絶縁保護膜に対する動的接触角が７０度以下であり、前記（Ｃ）無機充填剤は、質量平均粒子径が１０μｍ以下で且つ比表面積が３．０ｍ２／ｇ以上である、封止用エポキシ樹脂成形材料。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS |
| title | EPOXY RESIN MOLDING MATERIAL FOR SEALING AND SEMICONDUCTOR DEVICE USING THE SAME |
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