EPITAXIAL SILICON WAFER
PROBLEM TO BE SOLVED: To provide an epitaxial silicon wafer in which the occurrence of white flaw can be suppressed in a simple and convenient manner.SOLUTION: An epitaxial silicon wafer comprises: a silicon wafer; and a silicon epitaxial layer formed on the silicon wafer. In metal analysis on the s...
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| creator | GOTO YUKITAKA YOSHITAKE KAN TAKAMIYA HITOSHI KUROZUMI YUSUKE |
| description | PROBLEM TO BE SOLVED: To provide an epitaxial silicon wafer in which the occurrence of white flaw can be suppressed in a simple and convenient manner.SOLUTION: An epitaxial silicon wafer comprises: a silicon wafer; and a silicon epitaxial layer formed on the silicon wafer. In metal analysis on the surface of the silicon epitaxial layer according to an inductively coupled plasma mass spectrometry, the W concentration is 1×10atoms/cmor less. Further, in metal analysis on the silicon epitaxial layer surface according to the inductively coupled plasma mass spectrometry, the Mo concentration is preferably 1×10atoms/cmor less.SELECTED DRAWING: Figure 1
【課題】白キズの発生を簡便に抑制し得るエピタキシャルシリコンウェーハを提供する。【解決手段】シリコンウェーハ上にシリコンエピタキシャル層が形成されたエピタキシャルシリコンウェーハであって、前記シリコンエピタキシャル層表面を誘導結合プラズマ質量分析法により金属分析したときのＷ濃度が１×１０６ａｔｏｍｓ／ｃｍ２以下であることを特徴とする。さらに、前記シリコンエピタキシャル層表面を誘導結合プラズマ質量分析法により金属分析したときのＭｏ濃度が１×１０７ａｔｏｍｓ／ｃｍ２以下であることが好ましい。【選択図】図１ |
| format | Patent |
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【課題】白キズの発生を簡便に抑制し得るエピタキシャルシリコンウェーハを提供する。【解決手段】シリコンウェーハ上にシリコンエピタキシャル層が形成されたエピタキシャルシリコンウェーハであって、前記シリコンエピタキシャル層表面を誘導結合プラズマ質量分析法により金属分析したときのＷ濃度が１×１０６ａｔｏｍｓ／ｃｍ２以下であることを特徴とする。さらに、前記シリコンエピタキシャル層表面を誘導結合プラズマ質量分析法により金属分析したときのＭｏ濃度が１×１０７ａｔｏｍｓ／ｃｍ２以下であることが好ましい。【選択図】図１</description><language>eng ; jpn</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; METALLURGY ; PHYSICS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TESTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160425&DB=EPODOC&CC=JP&NR=2016063213A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160425&DB=EPODOC&CC=JP&NR=2016063213A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GOTO YUKITAKA</creatorcontrib><creatorcontrib>YOSHITAKE KAN</creatorcontrib><creatorcontrib>TAKAMIYA HITOSHI</creatorcontrib><creatorcontrib>KUROZUMI YUSUKE</creatorcontrib><title>EPITAXIAL SILICON WAFER</title><description>PROBLEM TO BE SOLVED: To provide an epitaxial silicon wafer in which the occurrence of white flaw can be suppressed in a simple and convenient manner.SOLUTION: An epitaxial silicon wafer comprises: a silicon wafer; and a silicon epitaxial layer formed on the silicon wafer. In metal analysis on the surface of the silicon epitaxial layer according to an inductively coupled plasma mass spectrometry, the W concentration is 1×10atoms/cmor less. Further, in metal analysis on the silicon epitaxial layer surface according to the inductively coupled plasma mass spectrometry, the Mo concentration is preferably 1×10atoms/cmor less.SELECTED DRAWING: Figure 1
【課題】白キズの発生を簡便に抑制し得るエピタキシャルシリコンウェーハを提供する。【解決手段】シリコンウェーハ上にシリコンエピタキシャル層が形成されたエピタキシャルシリコンウェーハであって、前記シリコンエピタキシャル層表面を誘導結合プラズマ質量分析法により金属分析したときのＷ濃度が１×１０６ａｔｏｍｓ／ｃｍ２以下であることを特徴とする。さらに、前記シリコンエピタキシャル層表面を誘導結合プラズマ質量分析法により金属分析したときのＭｏ濃度が１×１０７ａｔｏｍｓ／ｃｍ２以下であることが好ましい。【選択図】図１</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>METALLURGY</subject><subject>PHYSICS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TESTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBB3DfAMcYzwdPRRCPb08XT291MId3RzDeJhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhmYGZsZGhsaOxkQpAgAPZB_J</recordid><startdate>20160425</startdate><enddate>20160425</enddate><creator>GOTO YUKITAKA</creator><creator>YOSHITAKE KAN</creator><creator>TAKAMIYA HITOSHI</creator><creator>KUROZUMI YUSUKE</creator><scope>EVB</scope></search><sort><creationdate>20160425</creationdate><title>EPITAXIAL SILICON WAFER</title><author>GOTO YUKITAKA ; YOSHITAKE KAN ; TAKAMIYA HITOSHI ; KUROZUMI YUSUKE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2016063213A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2016</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>METALLURGY</topic><topic>PHYSICS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TESTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>GOTO YUKITAKA</creatorcontrib><creatorcontrib>YOSHITAKE KAN</creatorcontrib><creatorcontrib>TAKAMIYA HITOSHI</creatorcontrib><creatorcontrib>KUROZUMI YUSUKE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GOTO YUKITAKA</au><au>YOSHITAKE KAN</au><au>TAKAMIYA HITOSHI</au><au>KUROZUMI YUSUKE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>EPITAXIAL SILICON WAFER</title><date>2016-04-25</date><risdate>2016</risdate><abstract>PROBLEM TO BE SOLVED: To provide an epitaxial silicon wafer in which the occurrence of white flaw can be suppressed in a simple and convenient manner.SOLUTION: An epitaxial silicon wafer comprises: a silicon wafer; and a silicon epitaxial layer formed on the silicon wafer. In metal analysis on the surface of the silicon epitaxial layer according to an inductively coupled plasma mass spectrometry, the W concentration is 1×10atoms/cmor less. Further, in metal analysis on the silicon epitaxial layer surface according to the inductively coupled plasma mass spectrometry, the Mo concentration is preferably 1×10atoms/cmor less.SELECTED DRAWING: Figure 1
【課題】白キズの発生を簡便に抑制し得るエピタキシャルシリコンウェーハを提供する。【解決手段】シリコンウェーハ上にシリコンエピタキシャル層が形成されたエピタキシャルシリコンウェーハであって、前記シリコンエピタキシャル層表面を誘導結合プラズマ質量分析法により金属分析したときのＷ濃度が１×１０６ａｔｏｍｓ／ｃｍ２以下であることを特徴とする。さらに、前記シリコンエピタキシャル層表面を誘導結合プラズマ質量分析法により金属分析したときのＭｏ濃度が１×１０７ａｔｏｍｓ／ｃｍ２以下であることが好ましい。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING METALLURGY PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | EPITAXIAL SILICON WAFER |
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