MANUFACTURING METHOD OF SILICON DEVICE
PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon device capable of making it easy to hold a pressure in a cavity portion constant.SOLUTION: A manufacturing method of a pressure sensor 1 includes: a first recess portion forming step of preparing a substrate 50 having a first reces...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng ; jpn |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon device capable of making it easy to hold a pressure in a cavity portion constant.SOLUTION: A manufacturing method of a pressure sensor 1 includes: a first recess portion forming step of preparing a substrate 50 having a first recess portion 53 and a piezoresistive element 20 disposed on a bottom portion of the first recess portion 53; an AlOfilm forming step of forming an AlOfilm 54 on at least a part of an inner surface of the first recess portion 53 of the substrate 50; a sacrifice layer forming step of forming a sacrifice layer 55 on the first recess portion 53; a lid layer forming step of forming a lid layer 56 having a through-hole 57 overlapping with the first recess portion 53 in a plain view and covering an opening of the first recess portion 53; a sacrifice layer etching step of performing etching from the through-hole 57 to the sacrifice layer 55 by using hydrofluoric acid vapor; and a through-hole sealing step of sealing the through-hole 57.SELECTED DRAWING: Figure 3
【課題】空洞部内の圧力を一定に保持し易くすることが可能な、シリコンデバイスの製造方法の提供。【解決手段】圧力センサー1の製造方法は、第1凹部53を有し、第1凹部53の底部にピエゾ抵抗素子20が配置されている基板50を準備する第1凹部形成工程と、基板50の第1凹部53の内面の少なくとも一部にAl2O3膜54を形成するAl2O3膜形成A工程と、第1凹部53に犠牲層55を形成する犠牲層形成工程と、平面視で第1凹部53と重なる貫通孔57を有し第1凹部53の開口を覆う蓋層56を形成する蓋層形成工程と、沸酸蒸気を用いて貫通孔57から犠牲層55をエッチングする犠牲層エッチング工程と、貫通孔57を封止する貫通孔封止工程と、を含むことを特徴とする。【選択図】図3 |
---|