POWER SEMICONDUCTOR DEVICE AND RESIN-SEALED MOTOR
PROBLEM TO BE SOLVED: To provide a power semiconductor device that has excellent heat radiation performance and facilitates miniaturization and cost reduction.SOLUTION: In a power semiconductor device 100a, a power IC chip 1 on which a power semiconductor element for controlling on/off of a large cu...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; jpn |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | SAKURAI KENJI KONO KENYA ISOBE TASUKE UTSUMI TOMOYUKI |
| description | PROBLEM TO BE SOLVED: To provide a power semiconductor device that has excellent heat radiation performance and facilitates miniaturization and cost reduction.SOLUTION: In a power semiconductor device 100a, a power IC chip 1 on which a power semiconductor element for controlling on/off of a large current is formed and an integrated circuit chip 2 which is larger than the power IC chip 1 and on which no power semiconductor element is formed are disposed so that the principal surfaces of the power IC chip 1 and the integrated circuit chip 2 face each other. An electrode pad 5a formed on the principal surface of the power IC chip 1 and an electrode pad 5b formed on the principal surface of the integrated circuit chip 2 are bonded together via an electrically conductive connection member 3a. On the principal surface of the integrated circuit chip 2, a projecting terminal 4 having an approximately same height as that of the power IC chip 1 is formed in a portion where the power IC chip 2 is not disposed.
【課題】放熱性に優れ、小型化および低コスト化が容易なパワー半導体装置を提供する。【解決手段】パワー半導体装置１００ａは、大電流をオン・オフ制御するパワー半導体素子が形成されたパワーＩＣチップ１と、パワーＩＣチップ１より大きくて、パワー半導体素子が形成されていない集積回路チップ２とが互いの主表面が対向するように配置され、パワーＩＣチップ１の主表面に形成された電極パッド５ａと集積回路チップ２の主表面に形成された電極パッド５ｂとが導電性接続部材３ａを介して接着されて構成されており、集積回路チップ２の主表面上で、パワーＩＣチップ１が配置されていない部分に、そのパワーＩＣチップ１の高さと略同じ高さを有する突起状端子４が形成されていることを特徴とする。【選択図】図１ |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2015230990A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2015230990A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2015230990A3</originalsourceid><addsrcrecordid>eNrjZDAM8A93DVIIdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNRCHIN9vTTDXZ19HF1UfD1B8ryMLCmJeYUp_JCaW4GJTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAjA0NTI2MDS0sDR2OiFAEAplwnBg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>POWER SEMICONDUCTOR DEVICE AND RESIN-SEALED MOTOR</title><source>esp@cenet</source><creator>SAKURAI KENJI ; KONO KENYA ; ISOBE TASUKE ; UTSUMI TOMOYUKI</creator><creatorcontrib>SAKURAI KENJI ; KONO KENYA ; ISOBE TASUKE ; UTSUMI TOMOYUKI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a power semiconductor device that has excellent heat radiation performance and facilitates miniaturization and cost reduction.SOLUTION: In a power semiconductor device 100a, a power IC chip 1 on which a power semiconductor element for controlling on/off of a large current is formed and an integrated circuit chip 2 which is larger than the power IC chip 1 and on which no power semiconductor element is formed are disposed so that the principal surfaces of the power IC chip 1 and the integrated circuit chip 2 face each other. An electrode pad 5a formed on the principal surface of the power IC chip 1 and an electrode pad 5b formed on the principal surface of the integrated circuit chip 2 are bonded together via an electrically conductive connection member 3a. On the principal surface of the integrated circuit chip 2, a projecting terminal 4 having an approximately same height as that of the power IC chip 1 is formed in a portion where the power IC chip 2 is not disposed.
【課題】放熱性に優れ、小型化および低コスト化が容易なパワー半導体装置を提供する。【解決手段】パワー半導体装置１００ａは、大電流をオン・オフ制御するパワー半導体素子が形成されたパワーＩＣチップ１と、パワーＩＣチップ１より大きくて、パワー半導体素子が形成されていない集積回路チップ２とが互いの主表面が対向するように配置され、パワーＩＣチップ１の主表面に形成された電極パッド５ａと集積回路チップ２の主表面に形成された電極パッド５ｂとが導電性接続部材３ａを介して接着されて構成されており、集積回路チップ２の主表面上で、パワーＩＣチップ１が配置されていない部分に、そのパワーＩＣチップ１の高さと略同じ高さを有する突起状端子４が形成されていることを特徴とする。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151221&DB=EPODOC&CC=JP&NR=2015230990A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151221&DB=EPODOC&CC=JP&NR=2015230990A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SAKURAI KENJI</creatorcontrib><creatorcontrib>KONO KENYA</creatorcontrib><creatorcontrib>ISOBE TASUKE</creatorcontrib><creatorcontrib>UTSUMI TOMOYUKI</creatorcontrib><title>POWER SEMICONDUCTOR DEVICE AND RESIN-SEALED MOTOR</title><description>PROBLEM TO BE SOLVED: To provide a power semiconductor device that has excellent heat radiation performance and facilitates miniaturization and cost reduction.SOLUTION: In a power semiconductor device 100a, a power IC chip 1 on which a power semiconductor element for controlling on/off of a large current is formed and an integrated circuit chip 2 which is larger than the power IC chip 1 and on which no power semiconductor element is formed are disposed so that the principal surfaces of the power IC chip 1 and the integrated circuit chip 2 face each other. An electrode pad 5a formed on the principal surface of the power IC chip 1 and an electrode pad 5b formed on the principal surface of the integrated circuit chip 2 are bonded together via an electrically conductive connection member 3a. On the principal surface of the integrated circuit chip 2, a projecting terminal 4 having an approximately same height as that of the power IC chip 1 is formed in a portion where the power IC chip 2 is not disposed.
【課題】放熱性に優れ、小型化および低コスト化が容易なパワー半導体装置を提供する。【解決手段】パワー半導体装置１００ａは、大電流をオン・オフ制御するパワー半導体素子が形成されたパワーＩＣチップ１と、パワーＩＣチップ１より大きくて、パワー半導体素子が形成されていない集積回路チップ２とが互いの主表面が対向するように配置され、パワーＩＣチップ１の主表面に形成された電極パッド５ａと集積回路チップ２の主表面に形成された電極パッド５ｂとが導電性接続部材３ａを介して接着されて構成されており、集積回路チップ２の主表面上で、パワーＩＣチップ１が配置されていない部分に、そのパワーＩＣチップ１の高さと略同じ高さを有する突起状端子４が形成されていることを特徴とする。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAM8A93DVIIdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNRCHIN9vTTDXZ19HF1UfD1B8ryMLCmJeYUp_JCaW4GJTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAjA0NTI2MDS0sDR2OiFAEAplwnBg</recordid><startdate>20151221</startdate><enddate>20151221</enddate><creator>SAKURAI KENJI</creator><creator>KONO KENYA</creator><creator>ISOBE TASUKE</creator><creator>UTSUMI TOMOYUKI</creator><scope>EVB</scope></search><sort><creationdate>20151221</creationdate><title>POWER SEMICONDUCTOR DEVICE AND RESIN-SEALED MOTOR</title><author>SAKURAI KENJI ; KONO KENYA ; ISOBE TASUKE ; UTSUMI TOMOYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2015230990A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SAKURAI KENJI</creatorcontrib><creatorcontrib>KONO KENYA</creatorcontrib><creatorcontrib>ISOBE TASUKE</creatorcontrib><creatorcontrib>UTSUMI TOMOYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SAKURAI KENJI</au><au>KONO KENYA</au><au>ISOBE TASUKE</au><au>UTSUMI TOMOYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>POWER SEMICONDUCTOR DEVICE AND RESIN-SEALED MOTOR</title><date>2015-12-21</date><risdate>2015</risdate><abstract>PROBLEM TO BE SOLVED: To provide a power semiconductor device that has excellent heat radiation performance and facilitates miniaturization and cost reduction.SOLUTION: In a power semiconductor device 100a, a power IC chip 1 on which a power semiconductor element for controlling on/off of a large current is formed and an integrated circuit chip 2 which is larger than the power IC chip 1 and on which no power semiconductor element is formed are disposed so that the principal surfaces of the power IC chip 1 and the integrated circuit chip 2 face each other. An electrode pad 5a formed on the principal surface of the power IC chip 1 and an electrode pad 5b formed on the principal surface of the integrated circuit chip 2 are bonded together via an electrically conductive connection member 3a. On the principal surface of the integrated circuit chip 2, a projecting terminal 4 having an approximately same height as that of the power IC chip 1 is formed in a portion where the power IC chip 2 is not disposed.
【課題】放熱性に優れ、小型化および低コスト化が容易なパワー半導体装置を提供する。【解決手段】パワー半導体装置１００ａは、大電流をオン・オフ制御するパワー半導体素子が形成されたパワーＩＣチップ１と、パワーＩＣチップ１より大きくて、パワー半導体素子が形成されていない集積回路チップ２とが互いの主表面が対向するように配置され、パワーＩＣチップ１の主表面に形成された電極パッド５ａと集積回路チップ２の主表面に形成された電極パッド５ｂとが導電性接続部材３ａを介して接着されて構成されており、集積回路チップ２の主表面上で、パワーＩＣチップ１が配置されていない部分に、そのパワーＩＣチップ１の高さと略同じ高さを有する突起状端子４が形成されていることを特徴とする。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; jpn |
| recordid | cdi_epo_espacenet_JP2015230990A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | POWER SEMICONDUCTOR DEVICE AND RESIN-SEALED MOTOR |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T19%3A27%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SAKURAI%20KENJI&rft.date=2015-12-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2015230990A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |