POWER SEMICONDUCTOR DEVICE AND RESIN-SEALED MOTOR

PROBLEM TO BE SOLVED: To provide a power semiconductor device that has excellent heat radiation performance and facilitates miniaturization and cost reduction.SOLUTION: In a power semiconductor device 100a, a power IC chip 1 on which a power semiconductor element for controlling on/off of a large current is formed and an integrated circuit chip 2 which is larger than the power IC chip 1 and on which no power semiconductor element is formed are disposed so that the principal surfaces of the power IC chip 1 and the integrated circuit chip 2 face each other. An electrode pad 5a formed on the principal surface of the power IC chip 1 and an electrode pad 5b formed on the principal surface of the integrated circuit chip 2 are bonded together via an electrically conductive connection member 3a. On the principal surface of the integrated circuit chip 2, a projecting terminal 4 having an approximately same height as that of the power IC chip 1 is formed in a portion where the power IC chip 2 is not disposed. 【課題】放熱性に優れ、小型化および低コスト化が容易なパワー半導体装置を提供する。【解決手段】パワー半導体装置１００ａは、大電流をオン・オフ制御するパワー半導体素子が形成されたパワーＩＣチップ１と、パワーＩＣチップ１より大きくて、パワー半導体素子が形成されていない集積回路チップ２とが互いの主表面が対向するように配置され、パワーＩＣチップ１の主表面に形成された電極パッド５ａと集積回路チップ２の主表面に形成された電極パッド５ｂとが導電性接続部材３ａを介して接着されて構成されており、集積回路チップ２の主表面上で、パワーＩＣチップ１が配置されていない部分に、そのパワーＩＣチップ１の高さと略同じ高さを有する突起状端子４が形成されていることを特徴とする。【選択図】図１