ELECTRONIC DEVICE

PROBLEM TO BE SOLVED: To provide an electronic device in which the linear expansion coefficient of a wiring board can be reduced, curvature deformation of the wiring board can be suppressed and eventually warp of the whole device can be suppressed by reducing the linear expansion coefficient of an a...

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Hauptverfasser: NAKAMURA TOSHIHIRO, YABUTA EIJI
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creator NAKAMURA TOSHIHIRO
YABUTA EIJI
description PROBLEM TO BE SOLVED: To provide an electronic device in which the linear expansion coefficient of a wiring board can be reduced, curvature deformation of the wiring board can be suppressed and eventually warp of the whole device can be suppressed by reducing the linear expansion coefficient of an area where an inner layer conductor is buried in a built-up layer.SOLUTION: In a plate-shaped built-up layer 30 as a prepreg obtained by sealing glass clothes 1, 2 with insulating resin 3, the first glass cloth 1 is located in a first area R1 which is nearer to an outer surface 30b than an inner layer conductor 51 in the thickness direction of the built-up layer 30 in the resin 3, the second glass cloth 2 is located in a second area R2 corresponding to the thickness d of the inner layer conductor 51 from the inner surface 30a in the thickness direction of the built-up layer 30 in the resin 3, the second glass cloth 2 is provided with a through-hole 2a, and the inner layer conductor 51 is disposed in the through-hole 2a. Therefore, the arrangement is planar such that the second glass cloth 2 is interposed at the interval of the inner layer conductor 51 in the resin 3. 【課題】ビルドアップ層において内層導体が埋め込まれている領域の線膨張率を低くすることにより、配線基板の低線膨張率化を図り、配線基板の反り変形を抑制し、ひいては装置全体の反りを抑制できるようにする。【解決手段】ガラスクロス1、2を絶縁性の樹脂3で封止してなるプリプレグとしての板状のビルドアップ層30において、第1のガラスクロス1は、樹脂3内にてビルドアップ層30の厚さ方向における内層導体51よりも外面30b寄りの第1の領域R1に位置し、第2のガラスクロス2は、樹脂3内にてビルドアップ層30の厚さ方向における内面30aから内層導体51の厚さd分相当の第2の領域R2に位置する。第2のガラスクロス2には貫通孔2aが設けられ、内層導体51は貫通孔2a内に配置されることにより、樹脂3内にて、内層導体51の間隙に第2のガラスクロス2が介在する平面的な配置とされている。【選択図】図2
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Therefore, the arrangement is planar such that the second glass cloth 2 is interposed at the interval of the inner layer conductor 51 in the resin 3. 【課題】ビルドアップ層において内層導体が埋め込まれている領域の線膨張率を低くすることにより、配線基板の低線膨張率化を図り、配線基板の反り変形を抑制し、ひいては装置全体の反りを抑制できるようにする。【解決手段】ガラスクロス1、2を絶縁性の樹脂3で封止してなるプリプレグとしての板状のビルドアップ層30において、第1のガラスクロス1は、樹脂3内にてビルドアップ層30の厚さ方向における内層導体51よりも外面30b寄りの第1の領域R1に位置し、第2のガラスクロス2は、樹脂3内にてビルドアップ層30の厚さ方向における内面30aから内層導体51の厚さd分相当の第2の領域R2に位置する。第2のガラスクロス2には貫通孔2aが設けられ、内層導体51は貫通孔2a内に配置されることにより、樹脂3内にて、内層導体51の間隙に第2のガラスクロス2が介在する平面的な配置とされている。【選択図】図2</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ; PRINTED CIRCUITS ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20151119&amp;DB=EPODOC&amp;CC=JP&amp;NR=2015207620A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20151119&amp;DB=EPODOC&amp;CC=JP&amp;NR=2015207620A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAKAMURA TOSHIHIRO</creatorcontrib><creatorcontrib>YABUTA EIJI</creatorcontrib><title>ELECTRONIC DEVICE</title><description>PROBLEM TO BE SOLVED: To provide an electronic device in which the linear expansion coefficient of a wiring board can be reduced, curvature deformation of the wiring board can be suppressed and eventually warp of the whole device can be suppressed by reducing the linear expansion coefficient of an area where an inner layer conductor is buried in a built-up layer.SOLUTION: In a plate-shaped built-up layer 30 as a prepreg obtained by sealing glass clothes 1, 2 with insulating resin 3, the first glass cloth 1 is located in a first area R1 which is nearer to an outer surface 30b than an inner layer conductor 51 in the thickness direction of the built-up layer 30 in the resin 3, the second glass cloth 2 is located in a second area R2 corresponding to the thickness d of the inner layer conductor 51 from the inner surface 30a in the thickness direction of the built-up layer 30 in the resin 3, the second glass cloth 2 is provided with a through-hole 2a, and the inner layer conductor 51 is disposed in the through-hole 2a. Therefore, the arrangement is planar such that the second glass cloth 2 is interposed at the interval of the inner layer conductor 51 in the resin 3. 【課題】ビルドアップ層において内層導体が埋め込まれている領域の線膨張率を低くすることにより、配線基板の低線膨張率化を図り、配線基板の反り変形を抑制し、ひいては装置全体の反りを抑制できるようにする。【解決手段】ガラスクロス1、2を絶縁性の樹脂3で封止してなるプリプレグとしての板状のビルドアップ層30において、第1のガラスクロス1は、樹脂3内にてビルドアップ層30の厚さ方向における内層導体51よりも外面30b寄りの第1の領域R1に位置し、第2のガラスクロス2は、樹脂3内にてビルドアップ層30の厚さ方向における内面30aから内層導体51の厚さd分相当の第2の領域R2に位置する。第2のガラスクロス2には貫通孔2aが設けられ、内層導体51は貫通孔2a内に配置されることにより、樹脂3内にて、内層導体51の間隙に第2のガラスクロス2が介在する平面的な配置とされている。【選択図】図2</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>PRINTED CIRCUITS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBB09XF1Dgny9_N0VnBxDfN0duVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhqZGBuZmRgaOxkQpAgBSIh4W</recordid><startdate>20151119</startdate><enddate>20151119</enddate><creator>NAKAMURA TOSHIHIRO</creator><creator>YABUTA EIJI</creator><scope>EVB</scope></search><sort><creationdate>20151119</creationdate><title>ELECTRONIC DEVICE</title><author>NAKAMURA TOSHIHIRO ; YABUTA EIJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2015207620A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</topic><topic>PRINTED CIRCUITS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NAKAMURA TOSHIHIRO</creatorcontrib><creatorcontrib>YABUTA EIJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAKAMURA TOSHIHIRO</au><au>YABUTA EIJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ELECTRONIC DEVICE</title><date>2015-11-19</date><risdate>2015</risdate><abstract>PROBLEM TO BE SOLVED: To provide an electronic device in which the linear expansion coefficient of a wiring board can be reduced, curvature deformation of the wiring board can be suppressed and eventually warp of the whole device can be suppressed by reducing the linear expansion coefficient of an area where an inner layer conductor is buried in a built-up layer.SOLUTION: In a plate-shaped built-up layer 30 as a prepreg obtained by sealing glass clothes 1, 2 with insulating resin 3, the first glass cloth 1 is located in a first area R1 which is nearer to an outer surface 30b than an inner layer conductor 51 in the thickness direction of the built-up layer 30 in the resin 3, the second glass cloth 2 is located in a second area R2 corresponding to the thickness d of the inner layer conductor 51 from the inner surface 30a in the thickness direction of the built-up layer 30 in the resin 3, the second glass cloth 2 is provided with a through-hole 2a, and the inner layer conductor 51 is disposed in the through-hole 2a. Therefore, the arrangement is planar such that the second glass cloth 2 is interposed at the interval of the inner layer conductor 51 in the resin 3. 【課題】ビルドアップ層において内層導体が埋め込まれている領域の線膨張率を低くすることにより、配線基板の低線膨張率化を図り、配線基板の反り変形を抑制し、ひいては装置全体の反りを抑制できるようにする。【解決手段】ガラスクロス1、2を絶縁性の樹脂3で封止してなるプリプレグとしての板状のビルドアップ層30において、第1のガラスクロス1は、樹脂3内にてビルドアップ層30の厚さ方向における内層導体51よりも外面30b寄りの第1の領域R1に位置し、第2のガラスクロス2は、樹脂3内にてビルドアップ層30の厚さ方向における内面30aから内層導体51の厚さd分相当の第2の領域R2に位置する。第2のガラスクロス2には貫通孔2aが設けられ、内層導体51は貫通孔2a内に配置されることにより、樹脂3内にて、内層導体51の間隙に第2のガラスクロス2が介在する平面的な配置とされている。【選択図】図2</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
PRINTED CIRCUITS
SEMICONDUCTOR DEVICES
title ELECTRONIC DEVICE
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