PLASMA PROCESSING APPARATUS AND METHOD

PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that can suppress residence of gas on a processing target object.SOLUTION: A plasma processing apparatus 10 has a processing container 12, a mount table 20, a center introducing portion 50 and a peripheral introducing portion 52. The cen...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NISHIZUKA TETSUYA, YOSHIKAWA JUN, MIHARA NAOTERU, FUKUDOME MOTOSHI, MATSUMOTO NAOKI, AIDA MICHITAKA, TAKAHASHI KAZUKI, MINAGAWA TAKASHI, TAKABA HIROYUKI, KONDO HIROYUKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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