PLASMA PROCESSING APPARATUS AND METHOD
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that can suppress residence of gas on a processing target object.SOLUTION: A plasma processing apparatus 10 has a processing container 12, a mount table 20, a center introducing portion 50 and a peripheral introducing portion 52. The cen...
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| creator | NISHIZUKA TETSUYA YOSHIKAWA JUN MIHARA NAOTERU FUKUDOME MOTOSHI MATSUMOTO NAOKI AIDA MICHITAKA TAKAHASHI KAZUKI MINAGAWA TAKASHI TAKABA HIROYUKI KONDO HIROYUKI |
| description | PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that can suppress residence of gas on a processing target object.SOLUTION: A plasma processing apparatus 10 has a processing container 12, a mount table 20, a center introducing portion 50 and a peripheral introducing portion 52. The center introducing portion is provided above the mount table, and introduces gas to the mount table along an axial line passing through the center of the mount table. The peripheral introducing portion is provided between the center introducing portion and the upper surface of the mount table in the height direction. The peripheral introducing portion is provided along a side wall 12a. The peripheral introducing portion provides plural gas discharge ports 52i arranged in the peripheral direction with respect to the axial line Z. The plural gas discharge ports of the peripheral introducing portion extend to be farther away from the mount table as approaching to the axial line.
【課題】被処理体上でのガスの滞留を抑制するプラズマ処理装置を提供する。【解決手段】プラズマ処理装置１０は、処理容器１２、載置台２０、中央導入部５０、及び、周辺導入部５２を有している。中央導入部は、載置台の上方に設けられており、載置台の中心を通る軸線に沿って当該載置台に向けてガスを導入する。周辺導入部は、高さ方向において、中央導入部と載置台の上面との間に設けられている。また、周辺導入部は、側壁１２ａに沿って設けられている。周辺導入部は、軸線Ｚに対して周方向に配列された複数のガス吐出口５２ｉを提供している。周辺導入部の複数のガス吐出口は、軸線に近づくにつれて載置台から離れるように延びている。【選択図】図１ |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2015201567A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2015201567A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2015201567A3</originalsourceid><addsrcrecordid>eNrjZFAL8HEM9nVUCAjyd3YNDvb0c1dwDAhwDHIMCQ1WcPRzUfB1DfHwd-FhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhqYgbGbuaEyUIgALXSP7</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PLASMA PROCESSING APPARATUS AND METHOD</title><source>esp@cenet</source><creator>NISHIZUKA TETSUYA ; YOSHIKAWA JUN ; MIHARA NAOTERU ; FUKUDOME MOTOSHI ; MATSUMOTO NAOKI ; AIDA MICHITAKA ; TAKAHASHI KAZUKI ; MINAGAWA TAKASHI ; TAKABA HIROYUKI ; KONDO HIROYUKI</creator><creatorcontrib>NISHIZUKA TETSUYA ; YOSHIKAWA JUN ; MIHARA NAOTERU ; FUKUDOME MOTOSHI ; MATSUMOTO NAOKI ; AIDA MICHITAKA ; TAKAHASHI KAZUKI ; MINAGAWA TAKASHI ; TAKABA HIROYUKI ; KONDO HIROYUKI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that can suppress residence of gas on a processing target object.SOLUTION: A plasma processing apparatus 10 has a processing container 12, a mount table 20, a center introducing portion 50 and a peripheral introducing portion 52. The center introducing portion is provided above the mount table, and introduces gas to the mount table along an axial line passing through the center of the mount table. The peripheral introducing portion is provided between the center introducing portion and the upper surface of the mount table in the height direction. The peripheral introducing portion is provided along a side wall 12a. The peripheral introducing portion provides plural gas discharge ports 52i arranged in the peripheral direction with respect to the axial line Z. The plural gas discharge ports of the peripheral introducing portion extend to be farther away from the mount table as approaching to the axial line.
【課題】被処理体上でのガスの滞留を抑制するプラズマ処理装置を提供する。【解決手段】プラズマ処理装置１０は、処理容器１２、載置台２０、中央導入部５０、及び、周辺導入部５２を有している。中央導入部は、載置台の上方に設けられており、載置台の中心を通る軸線に沿って当該載置台に向けてガスを導入する。周辺導入部は、高さ方向において、中央導入部と載置台の上面との間に設けられている。また、周辺導入部は、側壁１２ａに沿って設けられている。周辺導入部は、軸線Ｚに対して周方向に配列された複数のガス吐出口５２ｉを提供している。周辺導入部の複数のガス吐出口は、軸線に近づくにつれて載置台から離れるように延びている。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151112&DB=EPODOC&CC=JP&NR=2015201567A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151112&DB=EPODOC&CC=JP&NR=2015201567A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NISHIZUKA TETSUYA</creatorcontrib><creatorcontrib>YOSHIKAWA JUN</creatorcontrib><creatorcontrib>MIHARA NAOTERU</creatorcontrib><creatorcontrib>FUKUDOME MOTOSHI</creatorcontrib><creatorcontrib>MATSUMOTO NAOKI</creatorcontrib><creatorcontrib>AIDA MICHITAKA</creatorcontrib><creatorcontrib>TAKAHASHI KAZUKI</creatorcontrib><creatorcontrib>MINAGAWA TAKASHI</creatorcontrib><creatorcontrib>TAKABA HIROYUKI</creatorcontrib><creatorcontrib>KONDO HIROYUKI</creatorcontrib><title>PLASMA PROCESSING APPARATUS AND METHOD</title><description>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that can suppress residence of gas on a processing target object.SOLUTION: A plasma processing apparatus 10 has a processing container 12, a mount table 20, a center introducing portion 50 and a peripheral introducing portion 52. The center introducing portion is provided above the mount table, and introduces gas to the mount table along an axial line passing through the center of the mount table. The peripheral introducing portion is provided between the center introducing portion and the upper surface of the mount table in the height direction. The peripheral introducing portion is provided along a side wall 12a. The peripheral introducing portion provides plural gas discharge ports 52i arranged in the peripheral direction with respect to the axial line Z. The plural gas discharge ports of the peripheral introducing portion extend to be farther away from the mount table as approaching to the axial line.
【課題】被処理体上でのガスの滞留を抑制するプラズマ処理装置を提供する。【解決手段】プラズマ処理装置１０は、処理容器１２、載置台２０、中央導入部５０、及び、周辺導入部５２を有している。中央導入部は、載置台の上方に設けられており、載置台の中心を通る軸線に沿って当該載置台に向けてガスを導入する。周辺導入部は、高さ方向において、中央導入部と載置台の上面との間に設けられている。また、周辺導入部は、側壁１２ａに沿って設けられている。周辺導入部は、軸線Ｚに対して周方向に配列された複数のガス吐出口５２ｉを提供している。周辺導入部の複数のガス吐出口は、軸線に近づくにつれて載置台から離れるように延びている。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAL8HEM9nVUCAjyd3YNDvb0c1dwDAhwDHIMCQ1WcPRzUfB1DfHwd-FhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhqYgbGbuaEyUIgALXSP7</recordid><startdate>20151112</startdate><enddate>20151112</enddate><creator>NISHIZUKA TETSUYA</creator><creator>YOSHIKAWA JUN</creator><creator>MIHARA NAOTERU</creator><creator>FUKUDOME MOTOSHI</creator><creator>MATSUMOTO NAOKI</creator><creator>AIDA MICHITAKA</creator><creator>TAKAHASHI KAZUKI</creator><creator>MINAGAWA TAKASHI</creator><creator>TAKABA HIROYUKI</creator><creator>KONDO HIROYUKI</creator><scope>EVB</scope></search><sort><creationdate>20151112</creationdate><title>PLASMA PROCESSING APPARATUS AND METHOD</title><author>NISHIZUKA TETSUYA ; YOSHIKAWA JUN ; MIHARA NAOTERU ; FUKUDOME MOTOSHI ; MATSUMOTO NAOKI ; AIDA MICHITAKA ; TAKAHASHI KAZUKI ; MINAGAWA TAKASHI ; TAKABA HIROYUKI ; KONDO HIROYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2015201567A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>NISHIZUKA TETSUYA</creatorcontrib><creatorcontrib>YOSHIKAWA JUN</creatorcontrib><creatorcontrib>MIHARA NAOTERU</creatorcontrib><creatorcontrib>FUKUDOME MOTOSHI</creatorcontrib><creatorcontrib>MATSUMOTO NAOKI</creatorcontrib><creatorcontrib>AIDA MICHITAKA</creatorcontrib><creatorcontrib>TAKAHASHI KAZUKI</creatorcontrib><creatorcontrib>MINAGAWA TAKASHI</creatorcontrib><creatorcontrib>TAKABA HIROYUKI</creatorcontrib><creatorcontrib>KONDO HIROYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NISHIZUKA TETSUYA</au><au>YOSHIKAWA JUN</au><au>MIHARA NAOTERU</au><au>FUKUDOME MOTOSHI</au><au>MATSUMOTO NAOKI</au><au>AIDA MICHITAKA</au><au>TAKAHASHI KAZUKI</au><au>MINAGAWA TAKASHI</au><au>TAKABA HIROYUKI</au><au>KONDO HIROYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA PROCESSING APPARATUS AND METHOD</title><date>2015-11-12</date><risdate>2015</risdate><abstract>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that can suppress residence of gas on a processing target object.SOLUTION: A plasma processing apparatus 10 has a processing container 12, a mount table 20, a center introducing portion 50 and a peripheral introducing portion 52. The center introducing portion is provided above the mount table, and introduces gas to the mount table along an axial line passing through the center of the mount table. The peripheral introducing portion is provided between the center introducing portion and the upper surface of the mount table in the height direction. The peripheral introducing portion is provided along a side wall 12a. The peripheral introducing portion provides plural gas discharge ports 52i arranged in the peripheral direction with respect to the axial line Z. The plural gas discharge ports of the peripheral introducing portion extend to be farther away from the mount table as approaching to the axial line.
【課題】被処理体上でのガスの滞留を抑制するプラズマ処理装置を提供する。【解決手段】プラズマ処理装置１０は、処理容器１２、載置台２０、中央導入部５０、及び、周辺導入部５２を有している。中央導入部は、載置台の上方に設けられており、載置台の中心を通る軸線に沿って当該載置台に向けてガスを導入する。周辺導入部は、高さ方向において、中央導入部と載置台の上面との間に設けられている。また、周辺導入部は、側壁１２ａに沿って設けられている。周辺導入部は、軸線Ｚに対して周方向に配列された複数のガス吐出口５２ｉを提供している。周辺導入部の複数のガス吐出口は、軸線に近づくにつれて載置台から離れるように延びている。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | PLASMA PROCESSING APPARATUS AND METHOD |
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