SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND PROGRAM

PROBLEM TO BE SOLVED: To inhibit deposition of a by-product in a substrate processing apparatus.SOLUTION: A substrate processing apparatus comprises: a process gas supply system for supplying a process gas; an inert gas supply system for supplying an inert gas; and a seal cap for sealing an opening of a processing container in an airtight manner. The inert gas supply system includes a first supply pipe for supplying the inert gas to a first jet part at a central part of the seal cap, a second supply pipe for supplying the inert gas to a second jet part at a position opposite to an internal surface on an end on the opening side, a flow rate controller provided on a third supply pipe connected to the first and second supply pipes and a diaphragm provided on at least one of the first and second supply pipes, for narrowing a flow path where a gas flows. When a process gas is supplied to inside the processing container, the inert gas supply system supplies the inert gas at a flow rate controlled by the flow rate controller from the third supply pipe to the first and second supply pipes, and causes the inert gas in the first supply pipe to be jetted from the first jet part to inside the processing container, and causes the inert gas in the second supply pipe to be jetted from the second jet part toward the inner wall surface. 【課題】基板処理装置において副生成物の堆積を抑制する。【解決手段】処理ガスを供給する処理ガス供給系と、不活性ガスを供給する不活性ガス供給系と、処理容器の開口部を気密に閉塞するシールキャップとを有する基板処理装置において、不活性ガス供給系は、シールキャップ中央部の第１噴出部へ不活性ガスを供給する第１供給管と、前記開口部側の端部の内壁面と対向する位置の第２噴出部へ不活性ガスを供給する第２供給管と、第１及び第２供給管に接続された第３供給管に設けられた流量制御器と、第１及び第２供給管の少なくとも一方に設けられガスが流れる流路を絞る絞り部とを有し、処理容器内へ処理ガスを供給する際、流量制御器で流量制御した不活性ガスを第３供給管から第１及び第２供給管へ供給し、第１供給管の不活性ガスを第１噴出部より処理容器内へ噴出させ、第２供給管の不活性ガスを第２噴出部より前記内壁面に向け噴出させる。【選択図】図３