SUBSTRATE PROCESSING METHOD, PROGRAM, COMPUTER STORAGE MEDIUM AND SUBSTRATE PROCESSING SYSTEM
PROBLEM TO BE SOLVED: To perform patterning with less defect by suppressing the droplets remaining on a wafer, when patterning on a substrate by wet etching a block copolymer after phase separation.SOLUTION: In a method for processing a substrate by using a block copolymer containing hydrophilic pol...
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| creator | YAMAUCHI TAKESHI OKOCHI ATSUSHI KAWAKAMI SHINICHIRO YOSHIHARA KOSUKE ICHINOMIYA HIROSHI NISHIHATA HIROSHI |
| description | PROBLEM TO BE SOLVED: To perform patterning with less defect by suppressing the droplets remaining on a wafer, when patterning on a substrate by wet etching a block copolymer after phase separation.SOLUTION: In a method for processing a substrate by using a block copolymer containing hydrophilic polymer and a hydrophobic polymer, a resist pattern is formed on a neutral layer and a wafer W, on which a resist pattern is formed, is coated with the block copolymer. The block copolymer is then subjected to phase separation of hydrophilic polymer and a hydrophobic polymer, before being irradiated with UV rays. Thereafter, a polar organic solvent is supplied to the wafer W from a solvent nozzle 130, dry gas is discharged to the wafer W from a first gas nozzle 140, and the polar organic solvent on the wafer W is discharged.
【課題】相分離後のブロック共重合体をウェットエッチングして基板上にパターンを形成するにあたり、ウェハ上に残留する液滴を抑制することで、欠陥の少ないパターン形成を行う。【解決手段】親水性ポリマーと疎水性ポリマーとを含むブロック共重合体を用いて、基板を処理する方法であって、中性層上にレジストパターンを形成し、レジストパターン形成後のウェハに対してブロック共重合体を塗布する。ブロック共重合体を親水性ポリマーと疎水性ポリマーに相分離させ、次いで相分離したブロック共重合体に紫外線を照射する。その後、ウェハＷに溶剤ノズル１３０から極性有機溶剤を供給し、次いで、第１のガスノズル１４０からウェハＷに対して乾燥ガスを吐出して、ウェハＷ上から極性有機溶剤を排出する。【選択図】図２１ |
| format | Patent |
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【課題】相分離後のブロック共重合体をウェットエッチングして基板上にパターンを形成するにあたり、ウェハ上に残留する液滴を抑制することで、欠陥の少ないパターン形成を行う。【解決手段】親水性ポリマーと疎水性ポリマーとを含むブロック共重合体を用いて、基板を処理する方法であって、中性層上にレジストパターンを形成し、レジストパターン形成後のウェハに対してブロック共重合体を塗布する。ブロック共重合体を親水性ポリマーと疎水性ポリマーに相分離させ、次いで相分離したブロック共重合体に紫外線を照射する。その後、ウェハＷに溶剤ノズル１３０から極性有機溶剤を供給し、次いで、第１のガスノズル１４０からウェハＷに対して乾燥ガスを吐出して、ウェハＷ上から極性有機溶剤を排出する。【選択図】図２１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; NANOTECHNOLOGY ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TRANSPORTING</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150323&DB=EPODOC&CC=JP&NR=2015056455A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150323&DB=EPODOC&CC=JP&NR=2015056455A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMAUCHI TAKESHI</creatorcontrib><creatorcontrib>OKOCHI ATSUSHI</creatorcontrib><creatorcontrib>KAWAKAMI SHINICHIRO</creatorcontrib><creatorcontrib>YOSHIHARA KOSUKE</creatorcontrib><creatorcontrib>ICHINOMIYA HIROSHI</creatorcontrib><creatorcontrib>NISHIHATA HIROSHI</creatorcontrib><title>SUBSTRATE PROCESSING METHOD, PROGRAM, COMPUTER STORAGE MEDIUM AND SUBSTRATE PROCESSING SYSTEM</title><description>PROBLEM TO BE SOLVED: To perform patterning with less defect by suppressing the droplets remaining on a wafer, when patterning on a substrate by wet etching a block copolymer after phase separation.SOLUTION: In a method for processing a substrate by using a block copolymer containing hydrophilic polymer and a hydrophobic polymer, a resist pattern is formed on a neutral layer and a wafer W, on which a resist pattern is formed, is coated with the block copolymer. The block copolymer is then subjected to phase separation of hydrophilic polymer and a hydrophobic polymer, before being irradiated with UV rays. Thereafter, a polar organic solvent is supplied to the wafer W from a solvent nozzle 130, dry gas is discharged to the wafer W from a first gas nozzle 140, and the polar organic solvent on the wafer W is discharged.
【課題】相分離後のブロック共重合体をウェットエッチングして基板上にパターンを形成するにあたり、ウェハ上に残留する液滴を抑制することで、欠陥の少ないパターン形成を行う。【解決手段】親水性ポリマーと疎水性ポリマーとを含むブロック共重合体を用いて、基板を処理する方法であって、中性層上にレジストパターンを形成し、レジストパターン形成後のウェハに対してブロック共重合体を塗布する。ブロック共重合体を親水性ポリマーと疎水性ポリマーに相分離させ、次いで相分離したブロック共重合体に紫外線を照射する。その後、ウェハＷに溶剤ノズル１３０から極性有機溶剤を供給し、次いで、第１のガスノズル１４０からウェハＷに対して乾燥ガスを吐出して、ウェハＷ上から極性有機溶剤を排出する。【選択図】図２１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>NANOTECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIgNDnUKDglyDHFVCAjyd3YNDvb0c1fwdQ3x8HfRAQm5Bzn66ig4-_sGhIa4BikEh_gHObq7AlW4eIb6Kjj6uShgNSE4MjjE1ZeHgTUtMac4lRdKczMoubmGOHvophbkx6cWFyQmp-allsR7BRgZGJoamJqZmJo6GhOlCACXxTOc</recordid><startdate>20150323</startdate><enddate>20150323</enddate><creator>YAMAUCHI TAKESHI</creator><creator>OKOCHI ATSUSHI</creator><creator>KAWAKAMI SHINICHIRO</creator><creator>YOSHIHARA KOSUKE</creator><creator>ICHINOMIYA HIROSHI</creator><creator>NISHIHATA HIROSHI</creator><scope>EVB</scope></search><sort><creationdate>20150323</creationdate><title>SUBSTRATE PROCESSING METHOD, PROGRAM, COMPUTER STORAGE MEDIUM AND SUBSTRATE PROCESSING SYSTEM</title><author>YAMAUCHI TAKESHI ; OKOCHI ATSUSHI ; KAWAKAMI SHINICHIRO ; YOSHIHARA KOSUKE ; ICHINOMIYA HIROSHI ; NISHIHATA HIROSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2015056455A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>NANOTECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMAUCHI TAKESHI</creatorcontrib><creatorcontrib>OKOCHI ATSUSHI</creatorcontrib><creatorcontrib>KAWAKAMI SHINICHIRO</creatorcontrib><creatorcontrib>YOSHIHARA KOSUKE</creatorcontrib><creatorcontrib>ICHINOMIYA HIROSHI</creatorcontrib><creatorcontrib>NISHIHATA HIROSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMAUCHI TAKESHI</au><au>OKOCHI ATSUSHI</au><au>KAWAKAMI SHINICHIRO</au><au>YOSHIHARA KOSUKE</au><au>ICHINOMIYA HIROSHI</au><au>NISHIHATA HIROSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING METHOD, PROGRAM, COMPUTER STORAGE MEDIUM AND SUBSTRATE PROCESSING SYSTEM</title><date>2015-03-23</date><risdate>2015</risdate><abstract>PROBLEM TO BE SOLVED: To perform patterning with less defect by suppressing the droplets remaining on a wafer, when patterning on a substrate by wet etching a block copolymer after phase separation.SOLUTION: In a method for processing a substrate by using a block copolymer containing hydrophilic polymer and a hydrophobic polymer, a resist pattern is formed on a neutral layer and a wafer W, on which a resist pattern is formed, is coated with the block copolymer. The block copolymer is then subjected to phase separation of hydrophilic polymer and a hydrophobic polymer, before being irradiated with UV rays. Thereafter, a polar organic solvent is supplied to the wafer W from a solvent nozzle 130, dry gas is discharged to the wafer W from a first gas nozzle 140, and the polar organic solvent on the wafer W is discharged.
【課題】相分離後のブロック共重合体をウェットエッチングして基板上にパターンを形成するにあたり、ウェハ上に残留する液滴を抑制することで、欠陥の少ないパターン形成を行う。【解決手段】親水性ポリマーと疎水性ポリマーとを含むブロック共重合体を用いて、基板を処理する方法であって、中性層上にレジストパターンを形成し、レジストパターン形成後のウェハに対してブロック共重合体を塗布する。ブロック共重合体を親水性ポリマーと疎水性ポリマーに相分離させ、次いで相分離したブロック共重合体に紫外線を照射する。その後、ウェハＷに溶剤ノズル１３０から極性有機溶剤を供給し、次いで、第１のガスノズル１４０からウェハＷに対して乾燥ガスを吐出して、ウェハＷ上から極性有機溶剤を排出する。【選択図】図２１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING |
| title | SUBSTRATE PROCESSING METHOD, PROGRAM, COMPUTER STORAGE MEDIUM AND SUBSTRATE PROCESSING SYSTEM |
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