METHOD FOR PRODUCING RETICLE, RETICLE PRODUCED BY THE PRODUCTION METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a method for producing reticle suppressing the increase of CAD data.SOLUTION: There is provided a method for producing a reticle used in the production of a semiconductor device, comprising: a step of inputting a first circuit pattern data for light proximity effect...
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| creator | SASAKI TAKAMIZU |
| description | PROBLEM TO BE SOLVED: To provide a method for producing reticle suppressing the increase of CAD data.SOLUTION: There is provided a method for producing a reticle used in the production of a semiconductor device, comprising: a step of inputting a first circuit pattern data for light proximity effect compensation including periodic compensation components into a first memory region of a drawing apparatus; and a step of inputting a first dimensional increase/decrease distribution data for compensating a circuit pattern to be drawn on a reticle substrate into a second memory region of the drawing apparatus, using the first circuit pattern data for light proximity effect compensation by the drawing apparatus.
【課題】ＣＡＤデータの増加を抑制するレチクルの製造方法を提供する。【解決手段】半導体装置の製造で使用されるレチクルの製造方法は、周期性補正成分を含む第１の光近接効果補正用回路パターンデータを描画装置の第１のメモリ領域に入力するステップと、描画装置が第１の光近接効果補正用回路パターンデータを用いて、レチクル基板に描画されようとする回路パターンを補正するための第１の寸法増減分布データを描画装置の第２のメモリ領域に入力するステップと、を含む。【選択図】図１ |
| format | Patent |
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【課題】ＣＡＤデータの増加を抑制するレチクルの製造方法を提供する。【解決手段】半導体装置の製造で使用されるレチクルの製造方法は、周期性補正成分を含む第１の光近接効果補正用回路パターンデータを描画装置の第１のメモリ領域に入力するステップと、描画装置が第１の光近接効果補正用回路パターンデータを用いて、レチクル基板に描画されようとする回路パターンを補正するための第１の寸法増減分布データを描画装置の第２のメモリ領域に入力するステップと、を含む。【選択図】図１</description><language>eng ; jpn</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150312&DB=EPODOC&CC=JP&NR=2015045720A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150312&DB=EPODOC&CC=JP&NR=2015045720A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SASAKI TAKAMIZU</creatorcontrib><title>METHOD FOR PRODUCING RETICLE, RETICLE PRODUCED BY THE PRODUCTION METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a method for producing reticle suppressing the increase of CAD data.SOLUTION: There is provided a method for producing a reticle used in the production of a semiconductor device, comprising: a step of inputting a first circuit pattern data for light proximity effect compensation including periodic compensation components into a first memory region of a drawing apparatus; and a step of inputting a first dimensional increase/decrease distribution data for compensating a circuit pattern to be drawn on a reticle substrate into a second memory region of the drawing apparatus, using the first circuit pattern data for light proximity effect compensation by the drawing apparatus.
【課題】ＣＡＤデータの増加を抑制するレチクルの製造方法を提供する。【解決手段】半導体装置の製造で使用されるレチクルの製造方法は、周期性補正成分を含む第１の光近接効果補正用回路パターンデータを描画装置の第１のメモリ領域に入力するステップと、描画装置が第１の光近接効果補正用回路パターンデータを用いて、レチクル基板に描画されようとする回路パターンを補正するための第１の寸法増減分布データを描画装置の第２のメモリ領域に入力するステップと、を含む。【選択図】図１</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOjxdQ3x8HdRcPMPUggI8ncJdfb0c1cIcg3xdPZx1YExoFKuLgpOkQohHjB-iKe_nwLEAB0FrAYFu_p6Ovv7gdQCxV1cwzydgaY6-rlgleFhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhqYGJqbmRgaOxkQpAgC6eD_A</recordid><startdate>20150312</startdate><enddate>20150312</enddate><creator>SASAKI TAKAMIZU</creator><scope>EVB</scope></search><sort><creationdate>20150312</creationdate><title>METHOD FOR PRODUCING RETICLE, RETICLE PRODUCED BY THE PRODUCTION METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE</title><author>SASAKI TAKAMIZU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2015045720A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2015</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SASAKI TAKAMIZU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SASAKI TAKAMIZU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR PRODUCING RETICLE, RETICLE PRODUCED BY THE PRODUCTION METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE</title><date>2015-03-12</date><risdate>2015</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method for producing reticle suppressing the increase of CAD data.SOLUTION: There is provided a method for producing a reticle used in the production of a semiconductor device, comprising: a step of inputting a first circuit pattern data for light proximity effect compensation including periodic compensation components into a first memory region of a drawing apparatus; and a step of inputting a first dimensional increase/decrease distribution data for compensating a circuit pattern to be drawn on a reticle substrate into a second memory region of the drawing apparatus, using the first circuit pattern data for light proximity effect compensation by the drawing apparatus.
【課題】ＣＡＤデータの増加を抑制するレチクルの製造方法を提供する。【解決手段】半導体装置の製造で使用されるレチクルの製造方法は、周期性補正成分を含む第１の光近接効果補正用回路パターンデータを描画装置の第１のメモリ領域に入力するステップと、描画装置が第１の光近接効果補正用回路パターンデータを用いて、レチクル基板に描画されようとする回路パターンを補正するための第１の寸法増減分布データを描画装置の第２のメモリ領域に入力するステップと、を含む。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; jpn |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | METHOD FOR PRODUCING RETICLE, RETICLE PRODUCED BY THE PRODUCTION METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
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