METHOD OF FORMING DEPOSITION SURFACE IN SUBSTRATE FOR DIAMOND DEPOSITION
PROBLEM TO BE SOLVED: To form a diamond film on a base member, e.g. a hard metal or an iron group metal, in a state free of effects of e.g. member ingredients.SOLUTION: A method of forming a deposition surface in a substrate for diamond deposition includes (1) a step of covering a part of the surfac...
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| creator | EVGENY A LEVASHOV EVGENY E ASHKINAZI ISHIZUKA HIROSHI ANDREY BOLSHAKOV HOSOMI AKIRA VICTOR G RALCHENKO EKATERINA V AZAROVA |
| description | PROBLEM TO BE SOLVED: To form a diamond film on a base member, e.g. a hard metal or an iron group metal, in a state free of effects of e.g. member ingredients.SOLUTION: A method of forming a deposition surface in a substrate for diamond deposition includes (1) a step of covering a part of the surface of a base material composed of a hard material with a matrix containing one or more selected from first metals of the first metal group comprising Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W and/or first metal compounds consisting of compounds of the first metals with a non-metal substance selected from boron, carbon and nitrogen, (2) a step of distributing diamond particles of average particle sizes of 1 μm or smaller on the surface of the base material and (3) a step of holding the diamond particles with the matrix containing one or both of the first metals and the first metal compounds. In the boundary between the base material composed of the hard material and the matrix, joint parts in which atoms of the first metal and/or the metal atoms constituting the hard material are dispersed are formed.
【課題】超硬合金或いは鉄族金属などの基礎部材上に、部材成分等の影響を受けない状態でダイヤモンド膜を形成する。【解決手段】ダイヤモンド析出用基体における析出面の形成方法は、(1)硬質材料からなる基礎材の表面の一部を、Ｓi、Ｔi、Ｚr、Ｈf、Ｖ、Ｎb、Ｔa、Ｃr、Ｍo、Ｗからなる第一金属群から選ばれる１種以上の第一金属種及び／又は、第一金属種とホウ素、炭素又はチッ素から選ばれる非金属物質との化合物である第一金属化合物を含有するマトリックスで覆う工程、(2)平均粒径が１μｍ以下であるダイヤモンド粒子を基礎材表面に分布せしめる工程、及び(3)ダイヤモンド粒子を、第一金属種及び／又は第一金属化合物を含有するマトリックスで保持する工程を有し、硬質材料からなる基礎材とマトリックスとの境界に、第一金属種の原子及び硬質材料を構成する金属原子の双方或いは一方の原子が拡散した接合部を形成する。【選択図】なし |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2015042609A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2015042609A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2015042609A3</originalsourceid><addsrcrecordid>eNrjZPDwdQ3x8HdR8HdTcPMP8vX0c1dwcQ3wD_YM8fT3UwgODXJzdHZV8AQxnYJDghxDXEHqFFw8HX39_VyQ1PIwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NTigsTk1LzUknivACMDQ1MDEyMzA0tHY6IUAQBoRi1h</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF FORMING DEPOSITION SURFACE IN SUBSTRATE FOR DIAMOND DEPOSITION</title><source>esp@cenet</source><creator>EVGENY A LEVASHOV ; EVGENY E ASHKINAZI ; ISHIZUKA HIROSHI ; ANDREY BOLSHAKOV ; HOSOMI AKIRA ; VICTOR G RALCHENKO ; EKATERINA V AZAROVA</creator><creatorcontrib>EVGENY A LEVASHOV ; EVGENY E ASHKINAZI ; ISHIZUKA HIROSHI ; ANDREY BOLSHAKOV ; HOSOMI AKIRA ; VICTOR G RALCHENKO ; EKATERINA V AZAROVA</creatorcontrib><description>PROBLEM TO BE SOLVED: To form a diamond film on a base member, e.g. a hard metal or an iron group metal, in a state free of effects of e.g. member ingredients.SOLUTION: A method of forming a deposition surface in a substrate for diamond deposition includes (1) a step of covering a part of the surface of a base material composed of a hard material with a matrix containing one or more selected from first metals of the first metal group comprising Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W and/or first metal compounds consisting of compounds of the first metals with a non-metal substance selected from boron, carbon and nitrogen, (2) a step of distributing diamond particles of average particle sizes of 1 μm or smaller on the surface of the base material and (3) a step of holding the diamond particles with the matrix containing one or both of the first metals and the first metal compounds. In the boundary between the base material composed of the hard material and the matrix, joint parts in which atoms of the first metal and/or the metal atoms constituting the hard material are dispersed are formed.
【課題】超硬合金或いは鉄族金属などの基礎部材上に、部材成分等の影響を受けない状態でダイヤモンド膜を形成する。【解決手段】ダイヤモンド析出用基体における析出面の形成方法は、(1)硬質材料からなる基礎材の表面の一部を、Ｓi、Ｔi、Ｚr、Ｈf、Ｖ、Ｎb、Ｔa、Ｃr、Ｍo、Ｗからなる第一金属群から選ばれる１種以上の第一金属種及び／又は、第一金属種とホウ素、炭素又はチッ素から選ばれる非金属物質との化合物である第一金属化合物を含有するマトリックスで覆う工程、(2)平均粒径が１μｍ以下であるダイヤモンド粒子を基礎材表面に分布せしめる工程、及び(3)ダイヤモンド粒子を、第一金属種及び／又は第一金属化合物を含有するマトリックスで保持する工程を有し、硬質材料からなる基礎材とマトリックスとの境界に、第一金属種の原子及び硬質材料を構成する金属原子の双方或いは一方の原子が拡散した接合部を形成する。【選択図】なし</description><language>eng ; jpn</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BORING ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MACHINE TOOLS ; METAL-WORKING NOT OTHERWISE PROVIDED FOR ; METALLURGY ; PERFORMING OPERATIONS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING ; TURNING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150305&DB=EPODOC&CC=JP&NR=2015042609A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150305&DB=EPODOC&CC=JP&NR=2015042609A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>EVGENY A LEVASHOV</creatorcontrib><creatorcontrib>EVGENY E ASHKINAZI</creatorcontrib><creatorcontrib>ISHIZUKA HIROSHI</creatorcontrib><creatorcontrib>ANDREY BOLSHAKOV</creatorcontrib><creatorcontrib>HOSOMI AKIRA</creatorcontrib><creatorcontrib>VICTOR G RALCHENKO</creatorcontrib><creatorcontrib>EKATERINA V AZAROVA</creatorcontrib><title>METHOD OF FORMING DEPOSITION SURFACE IN SUBSTRATE FOR DIAMOND DEPOSITION</title><description>PROBLEM TO BE SOLVED: To form a diamond film on a base member, e.g. a hard metal or an iron group metal, in a state free of effects of e.g. member ingredients.SOLUTION: A method of forming a deposition surface in a substrate for diamond deposition includes (1) a step of covering a part of the surface of a base material composed of a hard material with a matrix containing one or more selected from first metals of the first metal group comprising Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W and/or first metal compounds consisting of compounds of the first metals with a non-metal substance selected from boron, carbon and nitrogen, (2) a step of distributing diamond particles of average particle sizes of 1 μm or smaller on the surface of the base material and (3) a step of holding the diamond particles with the matrix containing one or both of the first metals and the first metal compounds. In the boundary between the base material composed of the hard material and the matrix, joint parts in which atoms of the first metal and/or the metal atoms constituting the hard material are dispersed are formed.
【課題】超硬合金或いは鉄族金属などの基礎部材上に、部材成分等の影響を受けない状態でダイヤモンド膜を形成する。【解決手段】ダイヤモンド析出用基体における析出面の形成方法は、(1)硬質材料からなる基礎材の表面の一部を、Ｓi、Ｔi、Ｚr、Ｈf、Ｖ、Ｎb、Ｔa、Ｃr、Ｍo、Ｗからなる第一金属群から選ばれる１種以上の第一金属種及び／又は、第一金属種とホウ素、炭素又はチッ素から選ばれる非金属物質との化合物である第一金属化合物を含有するマトリックスで覆う工程、(2)平均粒径が１μｍ以下であるダイヤモンド粒子を基礎材表面に分布せしめる工程、及び(3)ダイヤモンド粒子を、第一金属種及び／又は第一金属化合物を含有するマトリックスで保持する工程を有し、硬質材料からなる基礎材とマトリックスとの境界に、第一金属種の原子及び硬質材料を構成する金属原子の双方或いは一方の原子が拡散した接合部を形成する。【選択図】なし</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BORING</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MACHINE TOOLS</subject><subject>METAL-WORKING NOT OTHERWISE PROVIDED FOR</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><subject>TURNING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPDwdQ3x8HdR8HdTcPMP8vX0c1dwcQ3wD_YM8fT3UwgODXJzdHZV8AQxnYJDghxDXEHqFFw8HX39_VyQ1PIwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NTigsTk1LzUknivACMDQ1MDEyMzA0tHY6IUAQBoRi1h</recordid><startdate>20150305</startdate><enddate>20150305</enddate><creator>EVGENY A LEVASHOV</creator><creator>EVGENY E ASHKINAZI</creator><creator>ISHIZUKA HIROSHI</creator><creator>ANDREY BOLSHAKOV</creator><creator>HOSOMI AKIRA</creator><creator>VICTOR G RALCHENKO</creator><creator>EKATERINA V AZAROVA</creator><scope>EVB</scope></search><sort><creationdate>20150305</creationdate><title>METHOD OF FORMING DEPOSITION SURFACE IN SUBSTRATE FOR DIAMOND DEPOSITION</title><author>EVGENY A LEVASHOV ; EVGENY E ASHKINAZI ; ISHIZUKA HIROSHI ; ANDREY BOLSHAKOV ; HOSOMI AKIRA ; VICTOR G RALCHENKO ; EKATERINA V AZAROVA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2015042609A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2015</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BORING</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MACHINE TOOLS</topic><topic>METAL-WORKING NOT OTHERWISE PROVIDED FOR</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><topic>TURNING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>EVGENY A LEVASHOV</creatorcontrib><creatorcontrib>EVGENY E ASHKINAZI</creatorcontrib><creatorcontrib>ISHIZUKA HIROSHI</creatorcontrib><creatorcontrib>ANDREY BOLSHAKOV</creatorcontrib><creatorcontrib>HOSOMI AKIRA</creatorcontrib><creatorcontrib>VICTOR G RALCHENKO</creatorcontrib><creatorcontrib>EKATERINA V AZAROVA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>EVGENY A LEVASHOV</au><au>EVGENY E ASHKINAZI</au><au>ISHIZUKA HIROSHI</au><au>ANDREY BOLSHAKOV</au><au>HOSOMI AKIRA</au><au>VICTOR G RALCHENKO</au><au>EKATERINA V AZAROVA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF FORMING DEPOSITION SURFACE IN SUBSTRATE FOR DIAMOND DEPOSITION</title><date>2015-03-05</date><risdate>2015</risdate><abstract>PROBLEM TO BE SOLVED: To form a diamond film on a base member, e.g. a hard metal or an iron group metal, in a state free of effects of e.g. member ingredients.SOLUTION: A method of forming a deposition surface in a substrate for diamond deposition includes (1) a step of covering a part of the surface of a base material composed of a hard material with a matrix containing one or more selected from first metals of the first metal group comprising Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W and/or first metal compounds consisting of compounds of the first metals with a non-metal substance selected from boron, carbon and nitrogen, (2) a step of distributing diamond particles of average particle sizes of 1 μm or smaller on the surface of the base material and (3) a step of holding the diamond particles with the matrix containing one or both of the first metals and the first metal compounds. In the boundary between the base material composed of the hard material and the matrix, joint parts in which atoms of the first metal and/or the metal atoms constituting the hard material are dispersed are formed.
【課題】超硬合金或いは鉄族金属などの基礎部材上に、部材成分等の影響を受けない状態でダイヤモンド膜を形成する。【解決手段】ダイヤモンド析出用基体における析出面の形成方法は、(1)硬質材料からなる基礎材の表面の一部を、Ｓi、Ｔi、Ｚr、Ｈf、Ｖ、Ｎb、Ｔa、Ｃr、Ｍo、Ｗからなる第一金属群から選ばれる１種以上の第一金属種及び／又は、第一金属種とホウ素、炭素又はチッ素から選ばれる非金属物質との化合物である第一金属化合物を含有するマトリックスで覆う工程、(2)平均粒径が１μｍ以下であるダイヤモンド粒子を基礎材表面に分布せしめる工程、及び(3)ダイヤモンド粒子を、第一金属種及び／又は第一金属化合物を含有するマトリックスで保持する工程を有し、硬質材料からなる基礎材とマトリックスとの境界に、第一金属種の原子及び硬質材料を構成する金属原子の双方或いは一方の原子が拡散した接合部を形成する。【選択図】なし</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BORING CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TURNING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD OF FORMING DEPOSITION SURFACE IN SUBSTRATE FOR DIAMOND DEPOSITION |
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