SEMICONDUCTOR ELEMENT HEAT GENERATION ANALYZER AND SEMICONDUCTOR ELEMENT HEAT GENERATION ANALYSIS METHOD
PROBLEM TO BE SOLVED: To solve problems that portions near a defective portion are damaged and the defective portion cannot be identified if a high voltage is applied to an inspection target so as to identify the defective portion that does not occur until the high voltage is applied, and that the i...
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| creator | NAKAO YUKIYASU NAGAE AKEMI |
| description | PROBLEM TO BE SOLVED: To solve problems that portions near a defective portion are damaged and the defective portion cannot be identified if a high voltage is applied to an inspection target so as to identify the defective portion that does not occur until the high voltage is applied, and that the inspection target is damaged because of lack of a pulse generation source to which an appropriate high voltage is applied.SOLUTION: A semiconductor element heat generation analyzer operates synchronously with signals from a pulse generation unit that generates a plurality of pulses each at a pulse height equal to or larger than 1000 V and a pulse width equal to or smaller than 1 msec, an infrared detector, and a lock-in control unit.
【課題】高電圧を印加してはじめて発生する不良箇所を特定するために検査対象に高電圧を印加すると、不良箇所近傍が破壊され、不良箇所を特定できないようことがあった。また、適当な高電圧を印加するパルス発生源がなかったので、検査対象を破壊してしまう場合があった。【解決手段】１０００Ｖ以上のパルス高さで１ｍｓｅｃ以下のパルス幅のパルスを複数発生するパルス発生ユニットと赤外線検出器とロックイン制御ユニットからの信号と同期させて動作させる。【選択図】 図１ |
| format | Patent |
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【課題】高電圧を印加してはじめて発生する不良箇所を特定するために検査対象に高電圧を印加すると、不良箇所近傍が破壊され、不良箇所を特定できないようことがあった。また、適当な高電圧を印加するパルス発生源がなかったので、検査対象を破壊してしまう場合があった。【解決手段】１０００Ｖ以上のパルス高さで１ｍｓｅｃ以下のパルス幅のパルスを複数発生するパルス発生ユニットと赤外線検出器とロックイン制御ユニットからの信号と同期させて動作させる。【選択図】 図１</description><language>eng ; jpn</language><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; TESTING</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150219&DB=EPODOC&CC=JP&NR=2015034817A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150219&DB=EPODOC&CC=JP&NR=2015034817A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAKAO YUKIYASU</creatorcontrib><creatorcontrib>NAGAE AKEMI</creatorcontrib><title>SEMICONDUCTOR ELEMENT HEAT GENERATION ANALYZER AND SEMICONDUCTOR ELEMENT HEAT GENERATION ANALYSIS METHOD</title><description>PROBLEM TO BE SOLVED: To solve problems that portions near a defective portion are damaged and the defective portion cannot be identified if a high voltage is applied to an inspection target so as to identify the defective portion that does not occur until the high voltage is applied, and that the inspection target is damaged because of lack of a pulse generation source to which an appropriate high voltage is applied.SOLUTION: A semiconductor element heat generation analyzer operates synchronously with signals from a pulse generation unit that generates a plurality of pulses each at a pulse height equal to or larger than 1000 V and a pulse width equal to or smaller than 1 msec, an infrared detector, and a lock-in control unit.
【課題】高電圧を印加してはじめて発生する不良箇所を特定するために検査対象に高電圧を印加すると、不良箇所近傍が破壊され、不良箇所を特定できないようことがあった。また、適当な高電圧を印加するパルス発生源がなかったので、検査対象を破壊してしまう場合があった。【解決手段】１０００Ｖ以上のパルス高さで１ｍｓｅｃ以下のパルス幅のパルスを複数発生するパルス発生ユニットと赤外線検出器とロックイン制御ユニットからの信号と同期させて動作させる。【選択図】 図１</description><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZMgIdvX1dPb3cwl1DvEPUnD1cfV19QtR8HB1DFFwd_VzDXIM8fT3U3D0c_SJjHINAjJcFEjQEuwZrODrGuLh78LDwJqWmFOcyguluRmU3FxDnD10Uwvy41OLCxKTU_NSS-K9AowMDE0NjE0sDM0djYlSBADECDZt</recordid><startdate>20150219</startdate><enddate>20150219</enddate><creator>NAKAO YUKIYASU</creator><creator>NAGAE AKEMI</creator><scope>EVB</scope></search><sort><creationdate>20150219</creationdate><title>SEMICONDUCTOR ELEMENT HEAT GENERATION ANALYZER AND SEMICONDUCTOR ELEMENT HEAT GENERATION ANALYSIS METHOD</title><author>NAKAO YUKIYASU ; NAGAE AKEMI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2015034817A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2015</creationdate><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>NAKAO YUKIYASU</creatorcontrib><creatorcontrib>NAGAE AKEMI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAKAO YUKIYASU</au><au>NAGAE AKEMI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR ELEMENT HEAT GENERATION ANALYZER AND SEMICONDUCTOR ELEMENT HEAT GENERATION ANALYSIS METHOD</title><date>2015-02-19</date><risdate>2015</risdate><abstract>PROBLEM TO BE SOLVED: To solve problems that portions near a defective portion are damaged and the defective portion cannot be identified if a high voltage is applied to an inspection target so as to identify the defective portion that does not occur until the high voltage is applied, and that the inspection target is damaged because of lack of a pulse generation source to which an appropriate high voltage is applied.SOLUTION: A semiconductor element heat generation analyzer operates synchronously with signals from a pulse generation unit that generates a plurality of pulses each at a pulse height equal to or larger than 1000 V and a pulse width equal to or smaller than 1 msec, an infrared detector, and a lock-in control unit.
【課題】高電圧を印加してはじめて発生する不良箇所を特定するために検査対象に高電圧を印加すると、不良箇所近傍が破壊され、不良箇所を特定できないようことがあった。また、適当な高電圧を印加するパルス発生源がなかったので、検査対象を破壊してしまう場合があった。【解決手段】１０００Ｖ以上のパルス高さで１ｍｓｅｃ以下のパルス幅のパルスを複数発生するパルス発生ユニットと赤外線検出器とロックイン制御ユニットからの信号と同期させて動作させる。【選択図】 図１</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; jpn |
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| subjects | INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING |
| title | SEMICONDUCTOR ELEMENT HEAT GENERATION ANALYZER AND SEMICONDUCTOR ELEMENT HEAT GENERATION ANALYSIS METHOD |
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