FILM DEPOSITION METHOD

PROBLEM TO BE SOLVED: To form a film having homogeneous quality and/or thickness in a film deposition method using a collision solidification phenomenon of particles.SOLUTION: Particles are allowed to collide with the surface of a substrate in the state where warp and/or waviness of the substrate ar...

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Hauptverfasser: MATSUSHIMA KIYOSHI, WATANABE MORIMICHI, OKOUCHI SOTA
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creator MATSUSHIMA KIYOSHI
WATANABE MORIMICHI
OKOUCHI SOTA
description PROBLEM TO BE SOLVED: To form a film having homogeneous quality and/or thickness in a film deposition method using a collision solidification phenomenon of particles.SOLUTION: Particles are allowed to collide with the surface of a substrate in the state where warp and/or waviness of the substrate are suppressed by using, for example, a tool made of a metal or ceramics. Warp and/or waviness of the substrate may be suppressed by bonding beforehand a holding substrate having prescribed rigidity and heat resistance with the substrate. Further, warp and/or waviness of the substrate may be suppressed by reducing the area of a film formed simultaneously in the continuous same plane. 【課題】粒子の衝突固化現象を用いる成膜方法において、均質な品質及び/又は厚みを有する膜を形成させる。【解決手段】例えば金属製又はセラミックス製の治具を用いる等して、基材の反り及び/又はうねりが抑制された状態で基材の表面に粒子を衝突させる。所定の剛性及び耐熱性を有する保持基板と基材とを予め接合することによって基材の反り及び/又はうねりを抑制してもよい。また、連続する同一平面内において同時に形成される膜の面積を小さくすることによって基材の反り及び/又はうねりを抑制してもよい。【選択図】図7
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Warp and/or waviness of the substrate may be suppressed by bonding beforehand a holding substrate having prescribed rigidity and heat resistance with the substrate. Further, warp and/or waviness of the substrate may be suppressed by reducing the area of a film formed simultaneously in the continuous same plane. 【課題】粒子の衝突固化現象を用いる成膜方法において、均質な品質及び/又は厚みを有する膜を形成させる。【解決手段】例えば金属製又はセラミックス製の治具を用いる等して、基材の反り及び/又はうねりが抑制された状態で基材の表面に粒子を衝突させる。所定の剛性及び耐熱性を有する保持基板と基材とを予め接合することによって基材の反り及び/又はうねりを抑制してもよい。また、連続する同一平面内において同時に形成される膜の面積を小さくすることによって基材の反り及び/又はうねりを抑制してもよい。【選択図】図7</abstract><oa>free_for_read</oa></addata></record>
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subjects CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title FILM DEPOSITION METHOD
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