FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND FILM DEPOSITION PROGRAM

PROBLEM TO BE SOLVED: To provide a film deposition apparatus, a film deposition method, and a film deposition program that can deposit a coating with desired film characteristics on a surface of a material to be processed in a short time.SOLUTION: A film deposition apparatus includes: a microwave supply part which supplies microwave pulses for generating plasma along a processing surface of a conductive material to be processed; a negative voltage application part which applies a negative bias voltage for expanding a sheath layer along the processing surface of the material to be processed to the material to be processed; a microwave supply port which propagates the microwave pulses supplied from the microwave supply part to the sheath layer; and a control part which controls the microwave supply part and negative voltage application part. The control part controls the microwave supply part so that a duty ratio as the ratio of a supply time of one microwave pulse to a period of the microwave pulses supplied during film deposition varies, and the duty ratio includes a first duty ratio and a second duty ratio different from the first duty ratio.