METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor wafer capable of more suitably suppressing crack occurrence in an outer periphery of the semiconductor wafer, and a semiconductor wafer.SOLUTION: There is provided a method for manufacturing a semiconductor wafer including t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MAKINO RYOHEI, KUMADA TAKAO, TAKAKI KEISHI, EDO MASAHARU
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor wafer capable of more suitably suppressing crack occurrence in an outer periphery of the semiconductor wafer, and a semiconductor wafer.SOLUTION: There is provided a method for manufacturing a semiconductor wafer including the steps of: forming a compound semiconductor layer different in kind from a substrate on a principal surface of the substrate; and removing the compound semiconductor layer formed in an outer periphery of the principal surface of the substrate by etching. Alternatively, there is provided a method for manufacturing a semiconductor wafer including a step of forming a compound semiconductor layer different in kind from a substrate on a principal surface of the substrate. The compound semiconductor layer forming step forms the compound semiconductor layer while masking the outer periphery of the principal surface of the substrate.