SUPPORT MEMBER AND SEMICONDUCTOR MANUFACTURING APPARATUS
PROBLEM TO BE SOLVED: To provide a support member capable of inhibiting warpage of a substrate during heat treatment, in particular, deposition, and to provide a semiconductor manufacturing apparatus having the support member.SOLUTION: A support member 50 includes: a flat plate 51 on which a wafer W...
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| creator | ITABASHI MASARU KUROKAWA MASATAKE TAKEUCHI YASUSHI OBE SATOYUKI IRIUDA HIROKI |
| description | PROBLEM TO BE SOLVED: To provide a support member capable of inhibiting warpage of a substrate during heat treatment, in particular, deposition, and to provide a semiconductor manufacturing apparatus having the support member.SOLUTION: A support member 50 includes: a flat plate 51 on which a wafer W is placed; and a wall 52 which is provided at a part of an outer periphery of the flat plate 51 so as to be arranged along an outer peripheral edge of the flat plate 51 and is formed higher than one main surface of the flat plate 51. An inner peripheral surface 52a of the wall 52, which is positioned at the one main surface side, is formed into a taper shape that may hold the wafer W. The wall 52 is formed so as to be higher than the wafer W placed on the other main surface of the flat plate 51. An inner peripheral surface 52a of the wall 52, which is positioned at the other surface side, is formed into a taper shape that may hold the wafer W. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2014175510A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2014175510A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2014175510A3</originalsourceid><addsrcrecordid>eNrjZLAIDg0I8A8KUfB19XVyDVJw9HNRCHb19XT293MJdQ7xD1LwdfQLdXN0DgkN8vRzV3AMCHAMcgwJDeZhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhiaG5qamhgaOxkQpAgDm9SlT</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SUPPORT MEMBER AND SEMICONDUCTOR MANUFACTURING APPARATUS</title><source>esp@cenet</source><creator>ITABASHI MASARU ; KUROKAWA MASATAKE ; TAKEUCHI YASUSHI ; OBE SATOYUKI ; IRIUDA HIROKI</creator><creatorcontrib>ITABASHI MASARU ; KUROKAWA MASATAKE ; TAKEUCHI YASUSHI ; OBE SATOYUKI ; IRIUDA HIROKI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a support member capable of inhibiting warpage of a substrate during heat treatment, in particular, deposition, and to provide a semiconductor manufacturing apparatus having the support member.SOLUTION: A support member 50 includes: a flat plate 51 on which a wafer W is placed; and a wall 52 which is provided at a part of an outer periphery of the flat plate 51 so as to be arranged along an outer peripheral edge of the flat plate 51 and is formed higher than one main surface of the flat plate 51. An inner peripheral surface 52a of the wall 52, which is positioned at the one main surface side, is formed into a taper shape that may hold the wafer W. The wall 52 is formed so as to be higher than the wafer W placed on the other main surface of the flat plate 51. An inner peripheral surface 52a of the wall 52, which is positioned at the other surface side, is formed into a taper shape that may hold the wafer W.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140922&DB=EPODOC&CC=JP&NR=2014175510A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140922&DB=EPODOC&CC=JP&NR=2014175510A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ITABASHI MASARU</creatorcontrib><creatorcontrib>KUROKAWA MASATAKE</creatorcontrib><creatorcontrib>TAKEUCHI YASUSHI</creatorcontrib><creatorcontrib>OBE SATOYUKI</creatorcontrib><creatorcontrib>IRIUDA HIROKI</creatorcontrib><title>SUPPORT MEMBER AND SEMICONDUCTOR MANUFACTURING APPARATUS</title><description>PROBLEM TO BE SOLVED: To provide a support member capable of inhibiting warpage of a substrate during heat treatment, in particular, deposition, and to provide a semiconductor manufacturing apparatus having the support member.SOLUTION: A support member 50 includes: a flat plate 51 on which a wafer W is placed; and a wall 52 which is provided at a part of an outer periphery of the flat plate 51 so as to be arranged along an outer peripheral edge of the flat plate 51 and is formed higher than one main surface of the flat plate 51. An inner peripheral surface 52a of the wall 52, which is positioned at the one main surface side, is formed into a taper shape that may hold the wafer W. The wall 52 is formed so as to be higher than the wafer W placed on the other main surface of the flat plate 51. An inner peripheral surface 52a of the wall 52, which is positioned at the other surface side, is formed into a taper shape that may hold the wafer W.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAIDg0I8A8KUfB19XVyDVJw9HNRCHb19XT293MJdQ7xD1LwdfQLdXN0DgkN8vRzV3AMCHAMcgwJDeZhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhiaG5qamhgaOxkQpAgDm9SlT</recordid><startdate>20140922</startdate><enddate>20140922</enddate><creator>ITABASHI MASARU</creator><creator>KUROKAWA MASATAKE</creator><creator>TAKEUCHI YASUSHI</creator><creator>OBE SATOYUKI</creator><creator>IRIUDA HIROKI</creator><scope>EVB</scope></search><sort><creationdate>20140922</creationdate><title>SUPPORT MEMBER AND SEMICONDUCTOR MANUFACTURING APPARATUS</title><author>ITABASHI MASARU ; KUROKAWA MASATAKE ; TAKEUCHI YASUSHI ; OBE SATOYUKI ; IRIUDA HIROKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2014175510A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>ITABASHI MASARU</creatorcontrib><creatorcontrib>KUROKAWA MASATAKE</creatorcontrib><creatorcontrib>TAKEUCHI YASUSHI</creatorcontrib><creatorcontrib>OBE SATOYUKI</creatorcontrib><creatorcontrib>IRIUDA HIROKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ITABASHI MASARU</au><au>KUROKAWA MASATAKE</au><au>TAKEUCHI YASUSHI</au><au>OBE SATOYUKI</au><au>IRIUDA HIROKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUPPORT MEMBER AND SEMICONDUCTOR MANUFACTURING APPARATUS</title><date>2014-09-22</date><risdate>2014</risdate><abstract>PROBLEM TO BE SOLVED: To provide a support member capable of inhibiting warpage of a substrate during heat treatment, in particular, deposition, and to provide a semiconductor manufacturing apparatus having the support member.SOLUTION: A support member 50 includes: a flat plate 51 on which a wafer W is placed; and a wall 52 which is provided at a part of an outer periphery of the flat plate 51 so as to be arranged along an outer peripheral edge of the flat plate 51 and is formed higher than one main surface of the flat plate 51. An inner peripheral surface 52a of the wall 52, which is positioned at the one main surface side, is formed into a taper shape that may hold the wafer W. The wall 52 is formed so as to be higher than the wafer W placed on the other main surface of the flat plate 51. An inner peripheral surface 52a of the wall 52, which is positioned at the other surface side, is formed into a taper shape that may hold the wafer W.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SUPPORT MEMBER AND SEMICONDUCTOR MANUFACTURING APPARATUS |
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