THIN FILM DEPOSITION APPARATUS
PROBLEM TO BE SOLVED: To provide a thin film deposition apparatus which can prevent clogging of a jet port of a raw material gas supply part to which raw material gas is supplied without influencing uniformity of a thin film formed on a substrate.SOLUTION: A thin film deposition apparatus includes:...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | YAMASHITA MASAMITSU FUJIMOTO TAKAYOSHI JINTA TOSHIYUKI |
| description | PROBLEM TO BE SOLVED: To provide a thin film deposition apparatus which can prevent clogging of a jet port of a raw material gas supply part to which raw material gas is supplied without influencing uniformity of a thin film formed on a substrate.SOLUTION: A thin film deposition apparatus includes: a chamber forming a vacuum environment; a substrate holding part for holding a substrate within the chamber; an electrode unit for generating plasma which is provided facing to the substrate holding part; and a raw material gas supply part provided between the substrate holding part and the electrode part which supplies raw material gas, in which the raw material gas is exposed to the plasma to be formed into a thin film on the substrate. The raw material gas supply part has a jet port to jet the raw material gas. Additionally, a film deposition cover which projects to a jet side from a jet port position is provided at least on an electrode unit side. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2014173134A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2014173134A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2014173134A3</originalsourceid><addsrcrecordid>eNrjZJAL8fD0U3Dz9PFVcHEN8A_2DPH091NwDAhwDHIMCQ3mYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBoYmhubGhsYmjsZEKQIA-wkh1w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>THIN FILM DEPOSITION APPARATUS</title><source>esp@cenet</source><creator>YAMASHITA MASAMITSU ; FUJIMOTO TAKAYOSHI ; JINTA TOSHIYUKI</creator><creatorcontrib>YAMASHITA MASAMITSU ; FUJIMOTO TAKAYOSHI ; JINTA TOSHIYUKI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a thin film deposition apparatus which can prevent clogging of a jet port of a raw material gas supply part to which raw material gas is supplied without influencing uniformity of a thin film formed on a substrate.SOLUTION: A thin film deposition apparatus includes: a chamber forming a vacuum environment; a substrate holding part for holding a substrate within the chamber; an electrode unit for generating plasma which is provided facing to the substrate holding part; and a raw material gas supply part provided between the substrate holding part and the electrode part which supplies raw material gas, in which the raw material gas is exposed to the plasma to be formed into a thin film on the substrate. The raw material gas supply part has a jet port to jet the raw material gas. Additionally, a film deposition cover which projects to a jet side from a jet port position is provided at least on an electrode unit side.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140922&DB=EPODOC&CC=JP&NR=2014173134A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140922&DB=EPODOC&CC=JP&NR=2014173134A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMASHITA MASAMITSU</creatorcontrib><creatorcontrib>FUJIMOTO TAKAYOSHI</creatorcontrib><creatorcontrib>JINTA TOSHIYUKI</creatorcontrib><title>THIN FILM DEPOSITION APPARATUS</title><description>PROBLEM TO BE SOLVED: To provide a thin film deposition apparatus which can prevent clogging of a jet port of a raw material gas supply part to which raw material gas is supplied without influencing uniformity of a thin film formed on a substrate.SOLUTION: A thin film deposition apparatus includes: a chamber forming a vacuum environment; a substrate holding part for holding a substrate within the chamber; an electrode unit for generating plasma which is provided facing to the substrate holding part; and a raw material gas supply part provided between the substrate holding part and the electrode part which supplies raw material gas, in which the raw material gas is exposed to the plasma to be formed into a thin film on the substrate. The raw material gas supply part has a jet port to jet the raw material gas. Additionally, a film deposition cover which projects to a jet side from a jet port position is provided at least on an electrode unit side.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAL8fD0U3Dz9PFVcHEN8A_2DPH091NwDAhwDHIMCQ3mYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBoYmhubGhsYmjsZEKQIA-wkh1w</recordid><startdate>20140922</startdate><enddate>20140922</enddate><creator>YAMASHITA MASAMITSU</creator><creator>FUJIMOTO TAKAYOSHI</creator><creator>JINTA TOSHIYUKI</creator><scope>EVB</scope></search><sort><creationdate>20140922</creationdate><title>THIN FILM DEPOSITION APPARATUS</title><author>YAMASHITA MASAMITSU ; FUJIMOTO TAKAYOSHI ; JINTA TOSHIYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2014173134A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMASHITA MASAMITSU</creatorcontrib><creatorcontrib>FUJIMOTO TAKAYOSHI</creatorcontrib><creatorcontrib>JINTA TOSHIYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMASHITA MASAMITSU</au><au>FUJIMOTO TAKAYOSHI</au><au>JINTA TOSHIYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THIN FILM DEPOSITION APPARATUS</title><date>2014-09-22</date><risdate>2014</risdate><abstract>PROBLEM TO BE SOLVED: To provide a thin film deposition apparatus which can prevent clogging of a jet port of a raw material gas supply part to which raw material gas is supplied without influencing uniformity of a thin film formed on a substrate.SOLUTION: A thin film deposition apparatus includes: a chamber forming a vacuum environment; a substrate holding part for holding a substrate within the chamber; an electrode unit for generating plasma which is provided facing to the substrate holding part; and a raw material gas supply part provided between the substrate holding part and the electrode part which supplies raw material gas, in which the raw material gas is exposed to the plasma to be formed into a thin film on the substrate. The raw material gas supply part has a jet port to jet the raw material gas. Additionally, a film deposition cover which projects to a jet side from a jet port position is provided at least on an electrode unit side.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2014173134A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | THIN FILM DEPOSITION APPARATUS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T00%3A28%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YAMASHITA%20MASAMITSU&rft.date=2014-09-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2014173134A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |