HETEROJUNCTION BIPOLAR TRANSISTOR

HETEROJUNCTION BIPOLAR TRANSISTOR

PROBLEM TO BE SOLVED: To form an HBT including a ledge structure using a base layer made of GaAsSb and a collector layer made of InP in the state where a high current gain can be achieved and high frequency characteristics are improved.SOLUTION: On a base layer 104 made of GaAsSb, a first emitter la...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KURISHIMA KENJI, KAYAO NORIHIDE, IDA MINORU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To form an HBT including a ledge structure using a base layer made of GaAsSb and a collector layer made of InP in the state where a high current gain can be achieved and high frequency characteristics are improved.SOLUTION: On a base layer 104 made of GaAsSb, a first emitter layer 105 made of InAlGaAs is formed in the state of covering the base layer 104 and on the first emitter layer 105, a second emitter layer 106 made of InP is formed within a smaller area than the base layer 104.