PROXIMITY EFFECT CORRECTION METHOD AND ELECTRON BEAM LITHOGRAPHY APPARATUS USING THE METHOD

PROBLEM TO BE SOLVED: To provide a proximity effect correction method, in fine patterning using an electron beam lithography apparatus of high acceleration voltage, capable of reducing a processing time for proximity effect correction while maintaining a high drawing accuracy of a drawing pattern.SO...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HAYANO KATSUYA, NAKADA NAOKO, NARUKAWA TERUSATO, TSUJIMOTO EIJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!