POWER SEMICONDUCTOR MODULE
PROBLEM TO BE SOLVED: To provide a power semiconductor module, especially having a low-inductance structure.SOLUTION: According to a power semiconductor module including a substrate, the power semiconductor module has first and second DC voltage load current connection elements and first and second...
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creator | STEGER JURGEN BECKEDAHL PETER |
description | PROBLEM TO BE SOLVED: To provide a power semiconductor module, especially having a low-inductance structure.SOLUTION: According to a power semiconductor module including a substrate, the power semiconductor module has first and second DC voltage load current connection elements and first and second power semiconductor components. The first and second power semiconductor components are arranged along a lateral first direction of the substrate. The power semiconductor module has a foil composite having a first metallic foil layer and a structured second metallic foil layer and an electrically insulating foil layer arranged between the first and second metallic foil layers. The first power semiconductor component and the second power semiconductor component are conductively connected to the foil composite and to the substrate. The first and second power semiconductor components are arranged on a common surface with respect to the first and second DC voltage load current connection elements. |
format | Patent |
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The first and second power semiconductor components are arranged along a lateral first direction of the substrate. The power semiconductor module has a foil composite having a first metallic foil layer and a structured second metallic foil layer and an electrically insulating foil layer arranged between the first and second metallic foil layers. The first power semiconductor component and the second power semiconductor component are conductively connected to the foil composite and to the substrate. The first and second power semiconductor components are arranged on a common surface with respect to the first and second DC voltage load current connection elements.</description><language>eng</language><subject>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS ; BASIC ELECTRIC ELEMENTS ; CONTROL OR REGULATION THEREOF ; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER ; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERATION ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140508&DB=EPODOC&CC=JP&NR=2014082484A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140508&DB=EPODOC&CC=JP&NR=2014082484A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>STEGER JURGEN</creatorcontrib><creatorcontrib>BECKEDAHL PETER</creatorcontrib><title>POWER SEMICONDUCTOR MODULE</title><description>PROBLEM TO BE SOLVED: To provide a power semiconductor module, especially having a low-inductance structure.SOLUTION: According to a power semiconductor module including a substrate, the power semiconductor module has first and second DC voltage load current connection elements and first and second power semiconductor components. The first and second power semiconductor components are arranged along a lateral first direction of the substrate. The power semiconductor module has a foil composite having a first metallic foil layer and a structured second metallic foil layer and an electrically insulating foil layer arranged between the first and second metallic foil layers. The first power semiconductor component and the second power semiconductor component are conductively connected to the foil composite and to the substrate. The first and second power semiconductor components are arranged on a common surface with respect to the first and second DC voltage load current connection elements.</description><subject>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CONTROL OR REGULATION THEREOF</subject><subject>CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER</subject><subject>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERATION</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAK8A93DVIIdvX1dPb3cwl1DvEPUvD1dwn1ceVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhiYGFkYmFiaOxkQpAgCH2iDp</recordid><startdate>20140508</startdate><enddate>20140508</enddate><creator>STEGER JURGEN</creator><creator>BECKEDAHL PETER</creator><scope>EVB</scope></search><sort><creationdate>20140508</creationdate><title>POWER SEMICONDUCTOR MODULE</title><author>STEGER JURGEN ; BECKEDAHL PETER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2014082484A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CONTROL OR REGULATION THEREOF</topic><topic>CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER</topic><topic>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERATION</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>STEGER JURGEN</creatorcontrib><creatorcontrib>BECKEDAHL PETER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>STEGER JURGEN</au><au>BECKEDAHL PETER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>POWER SEMICONDUCTOR MODULE</title><date>2014-05-08</date><risdate>2014</risdate><abstract>PROBLEM TO BE SOLVED: To provide a power semiconductor module, especially having a low-inductance structure.SOLUTION: According to a power semiconductor module including a substrate, the power semiconductor module has first and second DC voltage load current connection elements and first and second power semiconductor components. The first and second power semiconductor components are arranged along a lateral first direction of the substrate. The power semiconductor module has a foil composite having a first metallic foil layer and a structured second metallic foil layer and an electrically insulating foil layer arranged between the first and second metallic foil layers. The first power semiconductor component and the second power semiconductor component are conductively connected to the foil composite and to the substrate. The first and second power semiconductor components are arranged on a common surface with respect to the first and second DC voltage load current connection elements.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION SEMICONDUCTOR DEVICES |
title | POWER SEMICONDUCTOR MODULE |
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